公开(公告)号：US20170207083A1

公开(公告)日：2017-07-20

申请号：US15349359

申请日：2016-11-11

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sunhye HWANG ,  Myong Woon KIM ,  Younjoung CHO ,  Sang lck LEE ,  Sang Yong JEON ,  In Kyung JUNG ,  Wonwoong CHUNG ,  Jungsik CHOI

IPC: H01L21/02 ,  H01L21/768 ,  C01B33/12

CPC classification number: H01L21/02208 ,  C01B33/126 ,  C23C16/00 ,  C23C16/401 ,  C23C16/56 ,  H01L21/02123 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02214 ,  H01L21/02274 ,  H01L21/02318 ,  H01L21/02348 ,  H01L21/76802 ,  H01L21/76843 ,  H01L21/76877 ,  H01L23/5329 ,  H01L2221/1047

Abstract: A method of forming a dielectric layer includes forming a preliminary dielectric layer on a substrate using a silicon precursor and performing an energy treatment on the preliminary dielectric layer to form a dielectric layer. In the dielectric layer, a ratio of Si—CH3 bonding unit to Si—O bonding unit ranges from 0.5 to 5.