公开(公告)号：US10353290B2

公开(公告)日：2019-07-16

申请号：US15183541

申请日：2016-06-15

Applicant: Samsung Electronics Co., Ltd.

Inventor： Cheol Hong Park ,  Chawon Koh ,  Hyunwoo Kim ,  Sang-Yoon Woo ,  Hyejin Jeon

IPC: G03F7/039 ,  G03F7/20 ,  G03F7/32 ,  H01L21/027 ,  G03F7/09 ,  G03F7/004 ,  G03F7/038 ,  G03F7/11

Abstract: The disclosed embodiments provide a photoresist composition for extreme ultraviolet (EUV) and a method of forming a photoresist pattern using the same. The photoresist composition includes an out-of-band (OOB) absorbing material absorbing light of a wavelength of 100 nm to 300 nm.

公开(公告)号：US09772555B2

公开(公告)日：2017-09-26

申请号：US15047659

申请日：2016-02-19

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Cheol-Hong Park ,  Sang-Yoon Woo ,  Cha-Won Koh ,  Hyun-Woo Kim ,  Sang-Min Park

IPC: G03F7/11 ,  G03F7/40 ,  G03F7/20 ,  H01L21/027 ,  H01L21/033 ,  G03F7/32 ,  H01L21/308 ,  H01L21/311 ,  H01L21/3213 ,  H01L21/768 ,  H01L27/108

CPC classification number: G03F7/20 ,  G03F7/091 ,  G03F7/11 ,  G03F7/32 ,  H01L21/0276 ,  H01L21/0335 ,  H01L21/0337 ,  H01L21/0338 ,  H01L21/3081 ,  H01L21/31144 ,  H01L21/32139 ,  H01L21/76802 ,  H01L27/10876

Abstract: In a method of forming a pattern, a lower coating layer and a photoresist layer are sequentially formed on an object layer. An exposure process may be performed such that the photoresist layer is divided into an exposed portion and a non-exposed portion. A portion of the lower coating layer overlapping or contacting the exposed portion is at least partially transformed into a polarity conversion portion that has a polarity substantially identical to that of the exposed portion. The non-exposed portion of the photoresist layer is selectively removed.