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Patent Agency Ranking
公开(公告)号：US09245957B2
公开(公告)日：2016-01-26
申请号：US14093121
申请日：2013-11-29
Applicant: Samsung Electronics Co., Ltd.
Inventor： Tae-sang Kim , Sun-jae Kim , Hyun-suk Kim , Myung-kwan Ryu , Joon-seok Park , Seok-jun Seo , Jong-baek Seon , Kyoung-seok Son
IPC: H01L29/10 , H01L29/24 , H01L29/786
CPC classification number: H01L29/24 , H01L29/7869 , H01L29/78693 , H01L29/78696
Abstract: According to example embodiments, a semiconductor material may include zinc, nitrogen, and fluorine. The semiconductor material may further include oxygen. The semiconductor material may include a compound. For example, the semiconductor material may include zinc fluorooxynitride. The semiconductor material may include zinc oxynitride containing fluorine. The semiconductor material may include zinc fluoronitride. The semiconductor material may be applied as a channel material of a thin film transistor (TFT).
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2.发明授权Semiconductor materials, transistors including the same, and electronic devices including transistors 有权半导体材料，包括其的晶体管，以及包括晶体管的电子器件公开(公告)号：US09343534B2
公开(公告)日：2016-05-17
申请号：US14093153
申请日：2013-11-29
Applicant: Samsung Electronics Co., Ltd.
Inventor： Tae-sang Kim , Sun-jae Kim , Hyun-suk Kim , Myung-kwan Ryu , Joon-seok Park , Seok-jun Seo , Jong-baek Seon , Kyoung-seok Son
IPC: H01L29/24 , H01L29/786
CPC classification number: H01L29/24 , H01L29/7869 , H01L29/78693 , H01L29/78696
Abstract: According to example embodiments, a semiconductor material may include zinc, nitrogen, and fluorine. The semiconductor material may further include oxygen. The semiconductor material may include a compound. For example, the semiconductor material may include zinc fluorooxynitride. The semiconductor material may include zinc oxynitride containing fluorine. The semiconductor material may include zinc fluoronitride. The semiconductor material may be applied as a channel material of a thin film transistor (TFT).
Abstract translation: 根据示例性实施例，半导体材料可以包括锌，氮和氟。 半导体材料还可以包括氧。 半导体材料可以包括化合物。 例如，半导体材料可以包括氟氧化氮锌。 半导体材料可以包含含氟的氮氧化锌。 半导体材料可以包括氟化氮锌。 半导体材料可以作为薄膜晶体管（TFT）的沟道材料施加。
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3.发明授权Oxynitride channel layer, transistor including the same and method of manufacturing the same 有权氧氮化物沟道层，包括其的晶体管及其制造方法公开(公告)号：US09076721B2
公开(公告)日：2015-07-07
申请号：US13770007
申请日：2013-02-19
Applicant: Samsung Electronics Co., Ltd.
Inventor： Joon-seok Park , Sun-jae Kim , Tae-sang Kim , Hyun-suk Kim , Myung-kwan Ryu , Seok-jun Seo , Jong-baek Seon , Kyoung-seok Son , Sang-yoon Lee
CPC classification number: H01L29/24 , H01L29/66742 , H01L29/66969 , H01L29/7869
Abstract: A transistor includes a channel layer including an oxynitride semiconductor doped with at least one of hafnium (Hf) and zirconium (Zr), a source on one side portion of the channel layer and a drain on another side portion of the channel layer, a gate corresponding to the channel layer, and a gate insulation layer between the channel layer and the gate.
Abstract translation: 晶体管包括沟道层，其包括掺杂有铪（Hf）和锆（Zr）中的至少一种的氧氮化物半导体，沟道层的一个侧部上的源极和沟道层的另一个侧部的漏极，栅极 对应于沟道层，以及沟道层和栅极之间的栅极绝缘层。
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4.发明授权Transistors including a channel where first and second regions have less oxygen concentration than a remaining region of the channel, methods of manufacturing the transistors, and electronic devices including the transistors 有权包括其中第一和第二区域具有比通道的剩余区域更少的氧浓度的通道的晶体管，制造晶体管的方法以及包括晶体管的电子器件公开(公告)号：US09123750B2
公开(公告)日：2015-09-01
申请号：US14016599
申请日：2013-09-03
Applicant: Samsung Electronics Co., Ltd.
Inventor： Joon-seok Park , Sun-jae Kim , Tae-sang Kim , Hyun-suk Kim , Myung-kwan Ryu , Seok-jun Seo , Jong-baek Seon , Kyoung-seok Son , Sang-yoon Lee
IPC: H01L29/10 , H01L29/66 , H01L29/786
CPC classification number: H01L29/66969 , H01L29/78618 , H01L29/7869
Abstract: According to example embodiments, a transistor may include a gate electrode, a gate insulating layer, and a channel layer stacked on each other; and a source electrode and a drain electrode contacting first and second regions of the channel layer, respectively. The channel layer may include metal oxynitride. The first and second regions of the channel layer may be treated with a plasma containing hydrogen, and the first and second regions have a higher carrier concentration than a carrier concentration of a remaining region of the channel layer. The first and second regions of the channel layer may have a lower oxygen concentration and a higher nitrogen concentration than that of the remaining region thereof. The metal oxynitride of the channel layer may include a zinc oxynitride (ZnON)-based semiconductor.
Abstract translation: 根据示例性实施例，晶体管可以包括彼此堆叠的栅电极，栅极绝缘层和沟道层; 以及分别与沟道层的第一和第二区域接触的源电极和漏电极。 沟道层可以包括金属氮氧化物。 可以用含氢的等离子体处理沟道层的第一和第二区域，并且第一和第二区域具有比沟道层的剩余区域的载流子浓度更高的载流子浓度。 沟道层的第一和第二区域可以具有比其余区域更低的氧浓度和更高的氮浓度。 沟道层的金属氧氮化物可以包括基于氮氧化锌（ZnON）的半导体。
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5.发明授权Transistor having sulfur-doped zinc oxynitride channel layer and method of manufacturing the same 有权具有硫掺杂氮氧化锌通道层的晶体管及其制造方法公开(公告)号：US08829515B2
公开(公告)日：2014-09-09
申请号：US13721635
申请日：2012-12-20
Applicant: Samsung Electronics Co., Ltd.
Inventor： Jong-baek Seon , Tae-sang Kim , Hyun-suk Kim , Myung-kwan Ryu , Joon-seok Park , Seok-jun Seo , Kyoung-seok Son , Sang-yoon Lee
IPC: H01L29/06 , H01L29/22 , H01L29/786 , H01L29/36
CPC classification number: H01L29/2206 , H01L29/36 , H01L29/66969 , H01L29/786 , H01L29/7869 , H01L29/78693
Abstract: Transistors having sulfur-doped zinc oxynitride channel layers, and methods of manufacturing the same, include a ZnON channel layer with sulfur content ratio with respect to a zinc content of from about 0.1 at % to about 1.2 at %, a source electrode and a drain electrode respectively formed on a first region and a second region of the channel layer, a gate electrode corresponding to the channel layer, and a gate insulation layer between the channel layer and the gate electrode.
Abstract translation: 具有硫掺杂的氮氧化锌通道层的晶体管及其制造方法包括相对于约0.1at％至约1.2at％的锌含量的硫含量比的ZnON沟道层，源电极和漏极 分别形成在沟道层的第一区域和第二区域上的电极，对应于沟道层的栅电极以及沟道层和栅电极之间的栅极绝缘层。
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