公开(公告)号：US20240288771A1

公开(公告)日：2024-08-29

申请号：US18238662

申请日：2023-08-28

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Ji cheol PARK ,  Seonghyeon AHN ,  Honggu IM

IPC: G03F7/039 ,  G03F7/004 ,  G03F7/038 ,  H01L21/027

CPC classification number: G03F7/039 ,  G03F7/0045 ,  G03F7/038 ,  H01L21/0272

Abstract: A semiconductor photoresist composition and a method of forming patterns, the composition includes an acid reactive polymer; a resin additive including a block copolymer; a photo acid generator; a photo-decomposable quencher; and a solvent, wherein the block copolymer includes an A-block and a B-block, a water contact angle of a polymer film consisting of the A-block is greater than about 50° and less than or equal to about 100°, and a water contact angle of a polymer film consisting of the B-block is greater than about 0° and less than or equal to about 50°.

公开(公告)号：US20250043046A1

公开(公告)日：2025-02-06

申请号：US18405175

申请日：2024-01-05

Applicant: Samsung Electronics Co., Ltd.

Inventor： Minsang KIM ,  Haengdeog KOH ,  Yoonhyun KWAK ,  Jeongho MUN ,  Seonghyeon AHN ,  Chanjae AHN ,  Jaejun LEE ,  Kyuhyun IM ,  Jungha CHAE ,  Sungwon CHOI

IPC: C08F120/28 ,  G03F7/004 ,  G03F7/20

Abstract: Provided are a polymer including a first repeating unit represented by Formula 1 and having a glass transition temperature of 50° C. or less, a polymer-containing composition including the polymer, and a method of forming a pattern by using the polymer-containing composition: wherein, in Formula 1, descriptions of L11 to L13, a11 to a13, An, R11, R12, b12, and p1 are provided in the present specification.

公开(公告)号：US20240168381A1

公开(公告)日：2024-05-23

申请号：US18377365

申请日：2023-10-06

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jincheol PARK ,  Seonghyeon AHN ,  Honggu IM ,  Sungmin KO ,  Juyoung KIM ,  Juhyeon PARK ,  Naery YU

IPC: G03F7/022 ,  G03F7/004 ,  G03F7/20

CPC classification number: G03F7/0226 ,  G03F7/0045 ,  G03F7/2004

Abstract: A photoresist composition for extreme ultraviolet (EUV) radiation and a method of manufacturing a semiconductor device, the photoresist composition includes a polymer resin; a photoacid generator; and a photoreactive additive that includes at least two diazonaphthoquinone (DNQ) groups, wherein the at least two DNQ groups are represented by Formula 1 or Formula 2 described herein.