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    MEMORY DEVICE INCLUDING ANTIFUSE MEMORY CELL ARRAY AND MEMORY SYSTEM INCLUDING THE MEMORY DEVICE
    3.
    发明申请
    MEMORY DEVICE INCLUDING ANTIFUSE MEMORY CELL ARRAY AND MEMORY SYSTEM INCLUDING THE MEMORY DEVICE 审中-公开
    包括防病毒存储器单元阵列和包含存储器件的存储器系统的存储器件

    公开(公告)号：US20130294141A1

    公开(公告)日：2013-11-07

    申请号：US13803612

    申请日：2013-03-14

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Se-Il Oh ,  Sung-Hoon Kim ,  Soo-Young Kim ,  Joung-Yeal Kim ,  Ho-Cheol Lee

    IPC: G11C17/18 ,  G11C17/16

    CPC classification number: G11C17/18 ,  G11C17/16

    Abstract: A memory device includes a memory cell array, a column decoder, and a row decoder. The row decoder includes a first word line driver and a second word line driver. The first word line driver is configured to electrically coupled to a first set of antifuse memory cells coupled to a first word line. The second word line driver is configured to electrically coupled to a second set of antifuse memory cells coupled to a second word line. The first set of antifuse memory cells are arranged in first and third rows of the memory cell array, and the second set of antifuse memory cells are arranged in second and fourth rows of the memory cell array. The second row is arranged between the first and third rows.

    Abstract translation: 存储器件包括存储单元阵列，列解码器和行解码器。 行解码器包括第一字线驱动器和第二字线驱动器。 第一字线驱动器被配置为电耦合到耦合到第一字线的第一组反熔丝存储器单元。 第二字线驱动器被配置为电耦合到耦合到第二字线的第二组反熔丝存储器单元。 第一组反熔丝存储单元布置在存储单元阵列的第一行和第三行中，第二组反熔丝存储单元布置在存储单元阵列的第二行和第四行中。 第二排布置在第一行和第三行之间。

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