公开(公告)号：US20180175043A1

公开(公告)日：2018-06-21

申请号：US15826944

申请日：2017-11-30

Applicant: Samsung Electronics Co., Ltd.

Inventor： Soon-mok HA ,  Jae-hee KIM ,  Chan HWANG ,  Jong-hyuk KIM

IPC: H01L27/108 ,  H01L49/02 ,  H01L21/311 ,  H01L21/027

CPC classification number: H01L27/10855 ,  H01L21/0273 ,  H01L21/31127 ,  H01L21/31144 ,  H01L27/10817 ,  H01L28/87 ,  H01L28/91

Abstract: A method of forming a micro-pattern including forming a mold layer and a supporting material layer on a substrate, patterning the mold layer and the supporting material layer to form recess patterns, forming conductor patterns in the recess patterns, removing a portion of an upper portion of the supporting material layer for causing upper portions of the conductor patterns to protrude, forming a block copolymer layer on the supporting material layer, processing the block copolymer layer to phase-separate the block copolymer layer into a plurality of block parts, selectively removing some of the phase-separated plurality of block parts, and removing the supporting material layer to expose the mold layer at a position corresponding to each of the removed block parts may be provided.

公开(公告)号：US20200152638A1

公开(公告)日：2020-05-14

申请号：US16745956

申请日：2020-01-17

Applicant: Samsung Electronics Co., Ltd.

Inventor： Soon-mok HA ,  Jae-hee KIM ,  Chan HWANG ,  Jong-hyuk KIM

IPC: H01L27/108 ,  H01L49/02 ,  H01L21/027 ,  H01L21/311

Abstract: A method of forming a micro-pattern including forming a mold layer and a supporting material layer on a substrate, patterning the mold layer and the supporting material layer to form recess patterns, forming conductor patterns in the recess patterns, removing a portion of an upper portion of the supporting material layer for causing upper portions of the conductor patterns to protrude, forming a block copolymer layer on the supporting material layer, processing the block copolymer layer to phase-separate the block copolymer layer into a plurality of block parts, selectively removing some of the phase-separated plurality of block parts, and removing the supporting material layer to expose the mold layer at a position corresponding to each of the removed block parts may be provided.

公开(公告)号：US20190157276A1

公开(公告)日：2019-05-23

申请号：US16233715

申请日：2018-12-27

Applicant: Samsung Electronics Co., Ltd.

Inventor： Soon-mok HA ,  Jae-hee Kim ,  Chan Hwang ,  Jong-hyuk Kim

IPC: H01L27/108 ,  H01L49/02 ,  H01L21/311 ,  H01L21/027

CPC classification number: H01L27/10855 ,  H01L21/0273 ,  H01L21/31127 ,  H01L21/31144 ,  H01L27/10817 ,  H01L28/87 ,  H01L28/91

Abstract: A method of forming a micro-pattern including forming a mold layer and a supporting material layer on a substrate, patterning the mold layer and the supporting material layer to form recess patterns, forming conductor patterns in the recess patterns, removing a portion of an upper portion of the supporting material layer for causing upper portions of the conductor patterns to protrude, forming a block copolymer layer on the supporting material layer, processing the block copolymer layer to phase-separate the block copolymer layer into a plurality of block parts , selectively removing some of the phase-separated plurality of block parts, and removing the supporting material layer to expose the mold layer at a position corresponding to each of the removed block parts may be provided.

公开(公告)号：US20150309411A1

公开(公告)日：2015-10-29

申请号：US14679054

申请日：2015-04-06

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sung-wook HWANG ,  Soon-mok HA ,  Joon-soo PARK

IPC: G03F7/20

CPC classification number: G03F7/2022 ,  G03F7/0035

Abstract: Methods of forming a pattern are provided. The methods may include forming a dual tone photoresist layer on a support layer, forming a low light exposure region, a middle light exposure region, and a high light exposure region in a first region of the dual tone photoresist layer and forming a low light exposure region and a middle light exposure region in a second region of the dual tone photoresist layer by exposing the dual tone photoresist layer to light by using a mask comprising a gray feature. The method may also include forming preliminary patterns in the first region by performing a positive development process and forming first patterns which are spaced apart from one another in the first region and second patterns which are spaced apart from one another in the second region by performing a negative development process.

Abstract translation: 提供形成图案的方法。 所述方法可以包括在双层光致抗蚀剂层的第一区域中在支撑层上形成双色光致抗蚀剂层，形成低曝光区域，中间曝光区域和高曝光区域，并形成低光照 区域和中间曝光区域，通过使用包括灰色特征的掩模将双色光致抗蚀剂层暴露于光下，在双色调光致抗蚀剂层的第二区域中。 该方法还可以包括通过执行正显影处理并形成在第一区域中彼此间隔开的第一图案和在第二区域中彼此间隔开的第二图案，在第一区域中形成初步图案， 负面发展过程。