-
1.发明公开公开(公告)号：US20240277226A1
公开(公告)日：2024-08-22
申请号：US18650981
申请日：2024-04-30
Applicant: Samsung Electronics Co., Ltd.
Inventor： Chungsoon PARK , Kyungmin KIM , Sujin PARK , Hyunggon KIM
CPC classification number: A61B5/0017 , A61B5/0059 , H02J7/00045 , H02J7/0047 , H02J7/04 , H02J50/12 , H02J50/20 , H02J50/80 , H04B10/502 , H04B10/69 , A61B2562/0233
Abstract: An electronic device is provided comprising: a biometric sensor, including at least one light emitting diode (LED) and at least one light receiving unit, for acquiring biometric information by means of the at least one light emitting device and the at least one light receiving unit; a power receiving circuit configured to receive a wireless power signal from an external electronic device; and a processor operatively coupled to the biometric sensor and the power receiving circuit. The processor may be configured to receive a designated wireless power signal from the external electronic device by using the power receiving circuit and to perform optical communication with the external electronic device by using the biosensor when the designated wireless power signal is received. Other various embodiments identified from the specification are also possible.
-
公开(公告)号：US20210115331A1
公开(公告)日：2021-04-22
申请号：US17063821
申请日：2020-10-06
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Yuho WON , Jeong Hee LEE , Eun Joo JANG , Ha Il KWON , Sujin PARK
Abstract: A quantum dot including a semiconductor nanocrystal core including indium (In) and phosphorus (P) and a semiconductor nanocrystal shell disposed on the semiconductor nanocrystal core, the semiconductor nanocrystal shell including zinc (Zn) and selenium (Se), wherein the semiconductor nanocrystal shell is doped with a dopant metal having a larger ion radius than a radius of an Zn2+ ion, the quantum dot does not include cadmium, and the quantum dot has a quantum efficiency of greater than or equal to about 70% and a full width at half maximum (FWHM) of an emission peak of less than or equal to about 40 nanometers (nm), and an electroluminescent device including the same.
-
公开(公告)号：US20220416187A1
公开(公告)日：2022-12-29
申请号：US17851211
申请日：2022-06-28
Applicant: Samsung Electronics Co., Ltd.
Inventor： Tae Hyung KIM , Heejae CHUNG , Eun Joo JANG , Sujin PARK , Yuho WON
IPC: H01L51/50
Abstract: An electroluminescent display device and a light emitting device including a blue light emitting layer include a first electrode, a second electrode, and a light emitting layer between the first electrode and the second electrode. The light emitting layer includes a blue light emitting layer including a plurality of nanostructures, the plurality of nanostructures does not include cadmium. On an application of a bias voltage, the blue light emitting layer is configured to emit light of an emission peak wavelength (λmax) in a range of greater than or equal to about 445 nm and less than or equal to about 480 nm. During a bias voltage change from a first voltage to a second voltage, the second voltage being greater than the first voltage by at least about 5 volts, the emission peak wavelength (λmax) of the blue light emitting layer may exhibit a first emission peak wavelength (a 1st λmax wavelength) that is less than an emission peak wavelength at the first voltage (λmax@first voltage) and an emission peak wavelength at the second voltage (λmax@second voltage), and during the bias voltage change, a change width in emission peak wavelength (λmax) is less than or equal to about 4 nm.
-
公开(公告)号：US20220084946A1
公开(公告)日：2022-03-17
申请号：US17373902
申请日：2021-07-13
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Sujin PARK , Heesung KAM , Byungjoo GO , Hyunju SUNG
IPC: H01L23/535 , H01L27/11556 , H01L27/11529 , H01L27/11582 , H01L27/11573
Abstract: A semiconductor device includes a stack structure including interlayer insulating layers and horizontal layers on a lower structure; a memory vertical structure vertically penetrating the stack structure; first and second barrier structures penetrating the stack structure in parallel; a supporter pattern penetrating the stack structure; and through contact plugs penetrating the stack structure. The first barrier structure includes first barrier patterns arranged in a first direction and spaced apart from each other, and second barrier patterns arranged in the first direction and spaced apart from each other. Each of the first and second barrier patterns includes a linear shape extending in the first direction. In a first barrier pattern and a second barrier pattern adjacent to each other, a portion of the first barrier pattern opposes a portion of the second barrier pattern in a second direction perpendicular to the first direction.
-
5.发明申请公开(公告)号：US20210093198A1
公开(公告)日：2021-04-01
申请号：US17043388
申请日：2019-04-05
Applicant: Samsung Electronics Co., Ltd.
Inventor： Chungsoon PARK , Kyungmin KIM , Sujin PARK , Hyunggon KIM
Abstract: Disclosed is an electronic device comprising: a biometric sensor, including at least one light emitting diode (LED) and at least one light receiving unit, for acquiring biometric information by means of the at least one light emitting device and the at least one light receiving unit; a power receiving circuit configured to receive a wireless power signal from an external electronic device; and a processor operatively coupled to the biometric sensor and the power receiving circuit. The processor may be configured to receive a designated wireless power signal from the external electronic device by using the power receiving circuit and to perform optical communication with the external electronic device by using the biosensor when the designated wireless power signal is received. Other various embodiments identified from the specification are also possible.
-
Patent Agency Ranking
公开(公告)号：US20240250034A1
公开(公告)日：2024-07-25
申请号：US18628233
申请日：2024-04-05
Applicant: Samsung Electronics Co., Ltd.
Inventor： Sujin PARK , Heesung KAM , Byungjoo GO , Hyunju SUNG
Abstract: A semiconductor device includes a stack structure including interlayer insulating layers and horizontal layers on a lower structure; a memory vertical structure vertically penetrating the stack structure; first and second barrier structures penetrating the stack structure in parallel; a supporter pattern penetrating the stack structure; and through contact plugs penetrating the stack structure. The first barrier structure includes first barrier patterns arranged in a first direction and spaced apart from each other, and second barrier patterns arranged in the first direction and spaced apart from each other. Each of the first and second barrier patterns includes a linear shape extending in the first direction. In a first barrier pattern and a second barrier pattern adjacent to each other, a portion of the first barrier pattern opposes a portion of the second barrier pattern in a second direction perpendicular to the first direction.
-
公开(公告)号：US20220399516A1
公开(公告)日：2022-12-15
申请号：US17892564
申请日：2022-08-22
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Sujin PARK , Yuho WON , Eun Joo JANG , Dae Young CHUNG , Sung Woo KIM , Jin A KIM , Yong Seok HAN
Abstract: An electroluminescent device includes a first electrode and a second electrode facing each other; a hole transport layer between the first electrode and the second electrode; a light emitting layer including a first light emitting layer disposed between the hole transport layer and the second electrode and including a first quantum dot and a second light emitting layer between the first light emitting layer and the second electrode and including a second quantum dot; and an electron transport layer between the light emitting layer and the second electrode. Each of the first and second light emitting layers emits first light, hole transport capability per unit area and electron transport capability per unit area of the first quantum dot are greater than hole transport capability per unit area and electron transport capability per unit area of the second quantum dot, respectively.
-
公开(公告)号：US20190326539A1
公开(公告)日：2019-10-24
申请号：US16356148
申请日：2019-03-18
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Dae Young CHUNG , Moon Gyu HAN , Oul CHO , Tae Hyung KIM , Sujin PARK , Hongkyu SEO , Eun Joo JANG
Abstract: An electroluminescent device including a first electrode, a hole transport layer disposed on the first electrode, a first emission layer disposed on the hole transport layer, the first emission layer including a first light emitting particle on which a first ligand having a hole transporting property is attached, a second emission layer disposed on the first emission layer, the second emission layer including a second light emitting particle on which a second ligand having an electron transporting property is attached, an electron transport layer disposed on the second emission layer, and a second electrode disposed on the electron transport layer, wherein a solubility of the first ligand in a solvent is different than a solubility of the second ligand in the solvent and a display device including the same.
-
公开(公告)号：US20190319208A1
公开(公告)日：2019-10-17
申请号：US16104967
申请日：2018-08-20
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Moon Gyu HAN , Dae Young CHUNG , Hongkyu SEO , Kwanghee KIM , Kun Su PARK , Sujin PARK , Eun Joo JANG
Abstract: A quantum dot device includes a first electrode and a second electrode facing each other, a quantum dot layer disposed between the first electrode and the second electrode and comprising a plurality of quantum dots, a first charge auxiliary layer disposed between the first electrode and the quantum dot layer and contacting the quantum dot layer, and a second charge auxiliary layer disposed between the second electrode and the quantum dot layer and contacting the quantum dot layer, wherein the plurality of quantum dots includes a quantum dot including an organic ligand on a surface thereof, the organic ligand including a hydrophilic functional group at a terminal end.
-
10.发明申请公开(公告)号：US20240386940A1
公开(公告)日：2024-11-21
申请号：US18525276
申请日：2023-11-30
Applicant: Samsung Electronics Co., Ltd.
Inventor： Kyoungmin KIM , Minchae KIM , Sujin PARK , Bok-Yeon WON , Bumjae LEE
IPC: G11C11/408
Abstract: A row decoder includes first and second main wordline driving circuits, which are configured to generate respective first and second driving signals onto corresponding first and second main wordlines extending adjacent to each other. In addition, a first transistor within the first main wordline driving circuit and a second transistor within the second main wordline driving circuit have the same function, but extend in different rows when viewed in a direction perpendicular to a substrate on which the first and second main wordlines are formed.
-
-
-
-
-
-
-
-
-
Search Results
16
records
(took 0.018 seconds)
