公开(公告)号：US12191332B2

公开(公告)日：2025-01-07

申请号：US17526424

申请日：2021-11-15

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Taeyoung Song ,  Sung In Kim ,  Haesung Jung

IPC: H01L27/146 ,  H04N25/778

Abstract: An image sensor includes: a first device isolation part in a substrate and defining an active region; a first gate electrode having a first and second gate sidewalls; and a first impurity region and a second impurity region adjacent to the first and second gate sidewalls, wherein the active region includes: a first active central part; a first active protrusion; and a second active protrusion, wherein the first device isolation part has a first isolation sidewall overlapping the first active central part, and wherein a first straight line is at least partially spaced apart from the first isolation sidewall, wherein the first straight line links a first point, at which the first active protrusion meets the first active central part, to a second point, at which the second active protrusion meets the first active central part.

公开(公告)号：US10559613B2

公开(公告)日：2020-02-11

申请号：US15813833

申请日：2017-11-15

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sung In Kim ,  Jae Kyu Lee ,  Jae Rok Kahng

IPC: H01L27/146 ,  H01L29/423 ,  H01L29/08 ,  H01L29/78 ,  H04N5/374 ,  H04N5/378

Abstract: A semiconductor device and a method for fabricating the same are provided. The semiconductor device includes a substrate, first and second recesses spaced apart from each other in a first direction within the substrate, a first gate electrode filling the first recess and protruding above the substrate, a second gate electrode filling the second recess and protruding above the substrate, a first source/drain formed between the first and second recesses, a second source/drain formed in an opposite direction to the first source/drain with respect to the first recess, and a third source/drain formed in an opposite direction to the first source/drain with respect to the second recess and electrically connected to the second source/drain.

公开(公告)号：US10763294B2

公开(公告)日：2020-09-01

申请号：US16203912

申请日：2018-11-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jaekyu Lee ,  Sung In Kim ,  Byung-Joon Baek

IPC: H01L27/146 ,  H04N5/369 ,  H04N5/3745 ,  H04N5/378

Abstract: An image sensor chip may include a first sub-chip, a second sub-chip on the first sub-chip, and an interconnector between the first and second sub-chips. The first sub-chip may include a first substrate, a bottom electrode on a first region of the first substrate, and a first capacitor on the bottom electrode. The first capacitor may include a plurality of first electrodes vertically extending from a top surface of the bottom electrode, a second electrode on the first electrodes, and a first dielectric layer between the second electrode and the first electrodes. The second sub-chip may include a pixel array configured to convert incident light into an electrical signal. The pixel array may be electrically connected through the interconnector to the first capacitor.

公开(公告)号：US20190267423A1

公开(公告)日：2019-08-29

申请号：US16203912

申请日：2018-11-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jaekyu Lee ,  Sung In Kim ,  Byung-Joon Baek

IPC: H01L27/146 ,  H04N5/3745 ,  H04N5/378 ,  H04N5/369

Abstract: An image sensor chip may include a first sub-chip, a second sub-chip on the first sub-chip, and an interconnector between the first and second sub-chips. The first sub-chip may include a first substrate, a bottom electrode on a first region of the first substrate, and a first capacitor on the bottom electrode. The first capacitor may include a plurality of first electrodes vertically extending from a top surface of the bottom electrode, a second electrode on the first electrodes, and a first dielectric layer between the second electrode and the first electrodes. The second sub-chip may include a pixel array configured to convert incident light into an electrical signal. The pixel array may be electrically connected through the interconnector to the first capacitor.

公开(公告)号：US20230352510A1

公开(公告)日：2023-11-02

申请号：US18164228

申请日：2023-02-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Junghye Kim ,  Donghyun Kim ,  Sung In Kim ,  Kyoungeun Chang ,  Jae Ho Kim

IPC: H01L27/146

CPC classification number: H01L27/1463 ,  H01L27/14607 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14645

Abstract: An image sensor includes a pixel separation part in a substrate and configured to separate pixels, the pixels including a first pixel, the pixel separation part including first to fourth sidewalls that at least partially define the first pixel, a first source follower gate electrode on the first pixel and adjacent to the first sidewall and the second sidewall, a first impurity region adjacent to a first corner where the first sidewall and the second sidewall meet, a second impurity region adjacent to a second corner where the second sidewall and the third sidewall meet, and a third impurity region adjacent to a third corner where the first sidewall and the fourth sidewall meet. The first to third impurity regions are adjacent to the first source follower gate electrode. The second impurity region and the third impurity region are electrically connected to each other.

公开(公告)号：US20240038809A1

公开(公告)日：2024-02-01

申请号：US18333191

申请日：2023-06-12

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ja Meyung Kim ,  Sung In Kim ,  Yeon Soo Ahn

IPC: H01L27/146

CPC classification number: H01L27/1463 ,  H01L27/14603 ,  H01L27/14636 ,  H01L27/14621

Abstract: An image sensor includes a substrate including a first face and a second face, the second face being opposite the first face in a first direction; a photoelectric conversion area disposed in the substrate; an active area disposed in the substrate and on the photoelectric conversion area; an element isolation pattern extending from the first face of the substrate into the substrate and defining the active area; and a transfer gate electrode including: a first portion extending from the first face of the substrate and extending through the element isolation pattern; and a second portion disposed on the active area, wherein the first portion extends through a bottom face of the element isolation pattern, wherein a vertical level of a bottom face of the first portion is lower than a vertical level of the bottom face of the element isolation pattern.

公开(公告)号：US11837615B2

公开(公告)日：2023-12-05

申请号：US17314910

申请日：2021-05-07

Applicant: Samsung Electronics Co., Ltd.

Inventor： Taeyoung Song ,  Sung In Kim ,  Kwansik Cho

IPC: H01L27/146 ,  H01L23/00

CPC classification number: H01L27/14614 ,  H01L24/08 ,  H01L27/1462 ,  H01L27/1463 ,  H01L27/1464 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14627 ,  H01L27/14634 ,  H01L27/14636 ,  H01L27/14645 ,  H01L27/14689 ,  H01L2224/08145

Abstract: An image sensor may include a substrate having first and second surfaces opposite to each other and including unit pixel regions and impurity regions near the first surface, a device isolation pattern provided on the first surface to define the impurity regions, and an interconnection layer including an insulating layer covering the first surface of the substrate, interconnection lines on the insulating layer, and a penetration structure penetrating the insulating layer. The penetration structure may include a first pattern connected to one of the impurity regions and in contact with at least a portion of the device isolation pattern, a second pattern provided on the first pattern and in contact with the interconnection lines, and a third pattern provided between the first and second patterns. A top surface of the first pattern may be higher than that of the device isolation pattern.