Abstract:
A method of manufacturing a semiconductor device includes forming first and second pattern structures on first and second regions of a substrate, respectively; forming a preparatory first interlayer insulating layer covering the first pattern structure on the first region; forming a preparatory second interlayer insulating layer covering the second pattern structure on the second region, the preparatory second interlayer insulating layer including first colloid; and converting the preparatory first and second interlayer insulating layers into first and second interlayer insulating layers, respectively, by annealing the preparatory first and second interlayer insulating layers.
Abstract:
A portable apparatus and a method of changing a content screen of the portable apparatus are provided. The portable apparatus includes changing a displayed content in response to an increase in a visual fatigue and a method of changing a content screen of the portable apparatus. Some of disclosed various embodiments provide a portable apparatus that calculates a visual fatigue by using user electroencephalogram (EEG) information received from a wearable apparatus and changing a displayed content into another content in response to an increase in the calculated visual fatigue, and a method of changing a content screen of the portable apparatus.
Abstract:
An integrated circuit device includes a fin-type active area extending on a substrate in a first direction, a first gate line and a second gate line extending on the fin-type active area in parallel to each other in a second direction, which is different from the first direction, a first insulating capping layer covering an upper surface of the first gate line and extending in parallel to the first gate line, a second insulating capping layer covering an upper surface of the second gate line and extending in parallel to the second gate line, wherein a height of the first gate line and a height of the second gate line are different from each other.
Abstract:
A recombinant microorganism comprising a lactic acid (LA) transporter, wherein the expression of the LA transporter in the recombinant microorganism is increased relative to a parent microorganism, and a method of producing lactic acid using same.
Abstract:
A recombinant microorganism comprising a lactic acid (LA) transporter, wherein the expression of the LA transporter in the recombinant microorganism is increased relative to a parent microorganism, and a method of producing lactic acid using same.
Abstract:
A speech recognition method and a speech recognition apparatus which pre-download a speech recognition model predicted to be used and use the speech recognition model in speech recognition is provided. The speech recognition method, performed by the speech recognition apparatus, includes determining a speech recognition model, based on user information downloading the speech recognition model, performing speech recognition, based on the speech recognition model, and outputting a result of performing the speech recognition.
Abstract:
A method of manufacturing a semiconductor device includes forming first and second pattern structures on first and second regions of a substrate, respectively, forming a preparatory first interlayer insulating layer covering the first pattern structure on the first region, forming a preparatory second interlayer insulating layer covering the second pattern structure on the second region, the preparatory second interlayer insulating layer including a first colloid, and converting the preparatory first and second interlayer insulating layers into first and second interlayer insulating layers, respectively, by annealing the preparatory first and second interlayer insulating layers.
Abstract:
A semiconductor device is provided that includes a deep trench defining an active region, and a fin-type pattern protruding within the active region. The fin-type pattern having a lower portion, an upper portion of a narrower width than the lower portion, and a first stepped portion formed at a boundary between the upper portion and the lower portion. The device also includes a first field insulating film surrounding the lower portion and a second field insulating film formed on the first field insulating film and partially surrounding the upper portion.
Abstract:
A correction data generating apparatus, a method of generating correction data, and an image quality correction system are provided. The method of generating correction data includes detecting brightness of a display panel, determining an non-uniform area of the display panel for each RGB color based on the detected brightness, generating correction data regarding the non-uniform area by determining a screen split size and a correction section for correcting an image quality of the display panel based on the non-uniform area, and storing the generated correction data. In this case, the correction data is stored in a storage of a display apparatus controlling the display panel, and the display apparatus corrects an image quality of the display panel using the correction data.
Abstract:
A semiconductor device is provided that includes a deep trench defining an active region, and a fin-type pattern protruding within the active region. The fin-type pattern having a lower portion, an upper portion of a narrower width than the lower portion, and a first stepped portion formed at a boundary between the upper portion and the lower portion. The device also includes a first field insulating film surrounding the lower portion and a second field insulating film formed on the first field insulating film and partially surrounding the upper portion.