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    HOLOGRAPHIC MICROSCOPE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE USING THE SAME
    1.
    发明申请
    HOLOGRAPHIC MICROSCOPE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE USING THE SAME 有权

    公开(公告)号：US20210200148A1

    公开(公告)日：2021-07-01

    申请号：US17060526

    申请日：2020-10-01

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Seungbeom Park ,  Sungmin Park ,  Jaehyeon Son ,  Heejun Ahn ,  Myungjun Lee

    IPC: G03H1/00 ,  G02B21/00 ,  G03H1/04 ,  G03H1/16 ,  H01L21/66

    Abstract: Provided is a holographic microscope including an input optical system configured to emit polarized input beam, a first beam splitter configured to emit an object beam by reflecting a portion of the polarized input beam, and emit a reference beam by transmitting a remaining portion of the polarized input beam, a reference optical system configured to separate the reference beam into a first reference beam and a second reference beam, a camera configured to receive the first reference beam and the second reference beam and the object beam that is reflected by an inspection object, the camera including a micro polarizer array, wherein a first polarization axis of the first reference beam is perpendicular to a second polarization axis of the second reference beam.

    SEMICONDUCTOR DEVICE
    2.
    发明申请
    SEMICONDUCTOR DEVICE 有权

    公开(公告)号：US20250133728A1

    公开(公告)日：2025-04-24

    申请号：US18825982

    申请日：2024-09-05

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Iljae Shin ,  Jinwoo Han ,  Seokhan Park ,  Sungmin Park ,  Gyuhwan Oh ,  Kiseok Lee

    IPC: H10B12/00 ,  H01L29/45

    Abstract: A semiconductor device includes a bit line, a channel, a word line and a capacitor. The bit line is disposed on a substrate, and extends in a first direction substantially perpendicular to an upper surface of the substrate. The channel at least partially surrounds a sidewall of the bit line. The word line is disposed on the substrate, and at least a portion of the word line overlaps the channel in a horizontal direction substantially parallel to the upper surface of the substrate. The capacitor is electrically connected to the channel, and at least a portion of the capacitor overlaps the channel and the word line in the horizontal direction.

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