公开(公告)号：US20170338232A1

公开(公告)日：2017-11-23

申请号：US15432697

申请日：2017-02-14

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sang Chul HAN ,  Do Hyung KIM ,  Tae ki HONG ,  Jin Hyuk CHOI ,  Moon Hyeong HAN

IPC: H01L27/108 ,  H01L21/67 ,  H01L21/3215 ,  H01L21/02 ,  H01L21/311 ,  H01L21/285 ,  H01L49/02 ,  H01L21/324

CPC classification number: H01L27/10852 ,  C23C16/24 ,  H01L21/02274 ,  H01L21/02532 ,  H01L21/0257 ,  H01L21/28556 ,  H01L21/76877 ,  H01L27/10814 ,  H01L28/90 ,  H01L28/91

Abstract: A method of fabricating semiconductor device is provided. The method includes providing a substrate having a trench, plasma-ionizing a gas which comprises a deposition material precursor and a doping material precursor to respectively obtain a plasma-ionized deposition material and a plasma-ionized doping material, and depositing the plasma-ionized deposition material and the plasma-ionized doping material in the trench by applying a bias voltage to a bottom surface of the trench, wherein the bottom surface of the trench comprises a first material, and sidewalls of the trench comprise a second material different from the first material.