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公开(公告)号:US11916042B2
公开(公告)日:2024-02-27
申请号:US17169701
申请日:2021-02-08
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Won-Young Kim
IPC: H01L29/40 , H01L23/48 , H01L23/52 , H01L25/065 , H01L23/00
CPC classification number: H01L25/0657 , H01L24/32 , H01L24/48 , H01L24/73 , H01L2224/32145 , H01L2224/32225 , H01L2224/48145 , H01L2224/48227 , H01L2224/73265 , H01L2225/0651 , H01L2225/06506 , H01L2225/06562 , H01L2924/00014 , H01L2924/00014 , H01L2224/45099
Abstract: A semiconductor package includes a substrate, a master chip on the substrate, a first slave chip on a top surface of the master chip and partially exposing the top surface of the master chip, the first slave chip having a same size as the master chip and having a same storage capacity as the master chip, and a first chip connector on the exposed top surface of the master chip and coupled to the master chip and the first slave chip.
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公开(公告)号:US20170133333A1
公开(公告)日:2017-05-11
申请号:US15295104
申请日:2016-10-17
Applicant: Samsung Electronics Co., Ltd.
Inventor: Won-Young Kim , Sun-Won Kang , Jin-Chan Ahn
IPC: H01L23/00
CPC classification number: H01L24/02 , H01L24/05 , H01L24/16 , H01L24/29 , H01L24/45 , H01L24/48 , H01L24/73 , H01L2224/02166 , H01L2224/0233 , H01L2224/0235 , H01L2224/02373 , H01L2224/02375 , H01L2224/02379 , H01L2224/02381 , H01L2224/04073 , H01L2224/13101 , H01L2224/16225 , H01L2224/2919 , H01L2224/32225 , H01L2224/45147 , H01L2224/48091 , H01L2224/4824 , H01L2224/73204 , H01L2224/73207 , H01L2224/73215 , H01L2224/73265 , H01L2924/00012 , H01L2924/00014 , H01L2924/014 , H01L2924/00
Abstract: Provided are a semiconductor device and a semiconductor package including the same. The semiconductor device comprises a semiconductor chip body including a first chip pad on a top surface, a passivation film disposed on the semiconductor chip body and a first redistribution layer that is disposed between the passivation film and the semiconductor chip body with an opening to expose a first chip center pad region at least partially overlapping the first chip pad, a first redistribution center pad region connected to the first chip center pad region, and a first edge pad region spaced apart from the first redistribution center pad region, through the passivation film, wherein a top surface of the first chip center pad region and a top surface of the first redistribution center pad region are not disposed on the same plane.
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公开(公告)号:US20190252332A1
公开(公告)日:2019-08-15
申请号:US16393135
申请日:2019-04-24
Applicant: Samsung Electronics Co., Ltd.
Inventor: Won-Young Kim , Sun-Won Kang , Jin-Chan Ahn
IPC: H01L23/00
CPC classification number: H01L24/02 , H01L24/05 , H01L24/16 , H01L24/29 , H01L24/45 , H01L24/48 , H01L24/73 , H01L2224/02166 , H01L2224/0233 , H01L2224/0235 , H01L2224/02373 , H01L2224/02375 , H01L2224/02379 , H01L2224/02381 , H01L2224/04073 , H01L2224/13101 , H01L2224/16225 , H01L2224/2919 , H01L2224/32225 , H01L2224/45147 , H01L2224/48091 , H01L2224/4824 , H01L2224/73204 , H01L2224/73207 , H01L2224/73215 , H01L2224/73265 , H01L2924/00012 , H01L2924/00014 , H01L2924/014 , H01L2924/00
Abstract: Provided are a semiconductor device and a semiconductor package including the same. The semiconductor device comprises a semiconductor chip body including a first chip pad on a top surface, a passivation film disposed on the semiconductor chip body and a first redistribution layer that is disposed between the passivation film and the semiconductor chip body with an opening to expose a first chip center pad region at least partially overlapping the first chip pad, a first redistribution center pad region connected to the first chip center pad region, and a first edge pad region spaced apart from the first redistribution center pad region, through the passivation film, wherein a top surface of the first chip center pad region and a top surface of the first redistribution center pad region are not disposed on the same plane.
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公开(公告)号:US10297559B2
公开(公告)日:2019-05-21
申请号:US15295104
申请日:2016-10-17
Applicant: Samsung Electronics Co., Ltd.
Inventor: Won-Young Kim , Sun-Won Kang , Jin-Chan Ahn
IPC: H01L23/00
Abstract: Provided are a semiconductor device and a semiconductor package including the same. The semiconductor device comprises a semiconductor chip body including a first chip pad on a top surface, a passivation film disposed on the semiconductor chip body and a first redistribution layer that is disposed between the passivation film and the semiconductor chip body with an opening to expose a first chip center pad region at least partially overlapping the first chip pad, a first redistribution center pad region connected to the first chip center pad region, and a first edge pad region spaced apart from the first redistribution center pad region, through the passivation film, wherein a top surface of the first chip center pad region and a top surface of the first redistribution center pad region are not disposed on the same plane.
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公开(公告)号:US12165974B2
公开(公告)日:2024-12-10
申请号:US17392936
申请日:2021-08-03
Applicant: Samsung Electronics Co., Ltd.
Inventor: Won-Young Kim , Sunwon Kang
IPC: H01L23/31 , H01L23/00 , H01L23/528 , H01L23/538 , H01L25/065
Abstract: Disclosed is a semiconductor package including a semiconductor chip that includes a chip pad on one surface of the semiconductor chip, a redistribution pattern on the one surface of the semiconductor chip and electrically connected to the chip pad, and a photosensitive dielectric layer between the semiconductor chip and the redistribution pattern. The photosensitive dielectric layer may be in physical contact with the redistribution pattern. The redistribution pattern includes a signal redistribution pattern, a ground redistribution pattern, and a power redistribution pattern. A vertical distance between the chip pad and the signal redistribution pattern may be greater than a width of the signal redistribution pattern.
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公开(公告)号:US10784216B2
公开(公告)日:2020-09-22
申请号:US16393135
申请日:2019-04-24
Applicant: Samsung Electronics Co., Ltd.
Inventor: Won-Young Kim , Sun-Won Kang , Jin-Chan Ahn
IPC: H01L23/00
Abstract: Provided are a semiconductor device and a semiconductor package including the same. The semiconductor device comprises a semiconductor chip body including a first chip pad on a top surface, a passivation film disposed on the semiconductor chip body and a first redistribution layer that is disposed between the passivation film and the semiconductor chip body with an opening to expose a first chip center pad region at least partially overlapping the first chip pad, a first redistribution center pad region connected to the first chip center pad region, and a first edge pad region spaced apart from the first redistribution center pad region, through the passivation film, wherein a top surface of the first chip center pad region and a top surface of the first redistribution center pad region are not disposed on the same plane.
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