公开(公告)号：US20150228786A1

公开(公告)日：2015-08-13

申请号：US14542867

申请日：2014-11-17

Applicant: Samsung Electronics Co., Ltd.

Inventor： Wook-Yeol Yi ,  Ki-Hong Nam ,  Dong-Chan Kim ,  Hee-Don Hwang ,  Young-Min Kim ,  Duk-Young Jang

IPC: H01L29/78 ,  H01L29/423

CPC classification number: H01L29/7843 ,  H01L21/76224 ,  H01L29/4236 ,  H01L29/66621 ,  H01L29/78 ,  H01L29/7827 ,  H01L29/7846

Abstract: A semiconductor device includes a semiconductor substrate having an active region. A gate trench is disposed to cross the active region. First and second source/drain regions are disposed in the active region at both sides of the gate trench. A gate electrode is disposed in the gate trench. A gate dielectric layer is disposed between the gate electrode and the active region. A stress pattern is disposed on the gate electrode and in the gate trench. The stress pattern has a lower residual stress than silicon nitride.

Abstract translation: 半导体器件包括具有有源区的半导体衬底。 栅极沟槽被布置成越过有源区域。 第一和第二源极/漏极区域设置在栅极沟槽的两侧的有源区域中。 栅电极设置在栅极沟槽中。 栅电介质层设置在栅电极和有源区之间。 应力图案设置在栅极电极和栅极沟槽中。 应力模式比氮化硅具有更低的残余应力。

公开(公告)号：US09685318B2

公开(公告)日：2017-06-20

申请号：US14920922

申请日：2015-10-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Young-Lim Park ,  Wonseok Yoo ,  Hyokyoung Kim ,  Changyup Park ,  Kongsoo Lee ,  Wook-Yeol Yi ,  Hanjin Lim

IPC: H01L21/02 ,  H01L21/311 ,  H01L27/108

CPC classification number: H01L21/0217 ,  H01L21/02247 ,  H01L27/10885

Abstract: Provided is a method of forming a semiconductor device. The method can include loading a semiconductor substrate into semiconductor equipment. A base layer can be formed on the loaded semiconductor substrate by performing a base deposition process using a base source material. A first silicon layer can be formed on the base layer to a greater thickness than the base layer by performing a first silicon deposition process using a silicon source material different from the base source material. A first nitrided silicon layer can be formed by nitriding the first silicon layer using a first nitridation process. The semiconductor substrate having the first nitrided silicon layer can be unloaded from the semiconductor equipment.

公开(公告)号：US11037991B2

公开(公告)日：2021-06-15

申请号：US16392099

申请日：2019-04-23

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yoongoo Kang ,  Changwoo Seo ,  Dain Lee ,  Wook-Yeol Yi ,  Hoi Sung Chung

IPC: H01L45/02 ,  H01L27/24 ,  H01L45/00

Abstract: A variable resistance memory device includes memory cells arranged on a substrate and an insulating structure between the memory cells. Each of the memory cells includes a variable resistance pattern and a switching pattern vertically stacked on the substrate. The insulating structure includes a first insulating pattern between the memory cells, and a second insulating pattern between the first insulating pattern and each of the memory cells. The first insulating pattern includes a material different from a material of the second insulating pattern.