公开(公告)号：US20200000388A1

公开(公告)日：2020-01-02

申请号：US16419678

申请日：2019-05-22

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyunsu HONG ,  Sangbeom NAM ,  Yongjin LEE

IPC: A61B5/16 ,  G08B21/18 ,  A61B5/11 ,  A61B5/00

Abstract: An electronic device for providing biometric information is provided. The electronic device includes a sensor module, a memory, and a processor electrically connected to the sensor module and the memory. The processor obtains a biometric signal from the sensor module at a predetermined time interval, determines whether a user is in a first state on the basis of the obtained biometric signal, in case the user is in a first state, obtains a representative value for a respective of the at least one biometric signal, defines the obtained representative value for the respective of the at least one biometric signal as a candidate reference value for a corresponding biometric signal, determines a candidate reference value satisfying a predetermined condition as a first reference value for the corresponding biometric signal, and updates a second reference value previously configured for the corresponding biometric signal on the basis of the first reference value.

公开(公告)号：US20190130156A1

公开(公告)日：2019-05-02

申请号：US16173704

申请日：2018-10-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： Inho YUN ,  Yongjin LEE ,  Hyunseok SHIN ,  Jongho PARK ,  Seungeun LEE

IPC: G06K9/00 ,  G16H10/60

Abstract: An electronic device includes a light emitting unit, including a first light emitting element and a second light emitting element; and a plurality of light receiving units disposed in a structure that encloses the light emitting unit, wherein the first light emitting element and the second light emitting element are disposed in a separated state based on a radiation area related to the light emitting unit in a designated distance range. Various embodiments are available.

公开(公告)号：US20250126835A1

公开(公告)日：2025-04-17

申请号：US18625457

申请日：2024-04-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yongjin LEE ,  Min Tae RYU ,  Younggeun SONG ,  Sanghoon AHN ,  Min Hee CHO ,  Daewon HA

IPC: H01L29/786 ,  H01L29/66

Abstract: A semiconductor device may include peripheral circuit structures on a substrate, an interlayer insulating layer on the peripheral circuit structure, a bit line extending in a first direction in the interlayer insulating layer, a semiconductor pattern on the bit line, and including first and second vertical portions facing each other in the first direction and a horizontal portion connecting the first and second vertical portions to each other, first and second word lines on the horizontal portion and adjacent to the first and second vertical portions, respectively, and a gate insulating pattern interposed between the first vertical portion and the first word line, and between the second vertical portion and the second word line. An upper surface of the interlayer insulating layer and an upper surface of the bit line are coplanar with each other.

公开(公告)号：US20190159717A1

公开(公告)日：2019-05-30

申请号：US16159843

申请日：2018-10-15

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sangil PARK ,  Gitae MUN ,  Jinwoo SEO ,  Yongjin LEE

IPC: A61B5/00 ,  G06F3/044 ,  H03K17/96

Abstract: An electronic device for measuring hydrature, and a method for the same are disclosed. The electronic device includes a display, a capacitive sensor and a processor implementing the method, including setting an attribute of a capacitive sensor using a first value, acquiring a first data measurement from the capacitive sensor in when an external object contacts a display and determining that a touch input has occurred based on the first data, detecting whether the determined touch input satisfies a prespecified condition, setting the operational attribute of the capacitive sensor using a second value when the prespecified condition is satisfied, acquiring a second data measurement from the capacitive sensor while the external object contacts the display when the at least one operational attribute is set using the second value, and determining a hydrature value associated with the external object at least based on the acquired second data measurement.

公开(公告)号：US20240373621A1

公开(公告)日：2024-11-07

申请号：US18627685

申请日：2024-04-05

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seungmin SHIN ,  Kijong PARK ,  Sangjun PARK ,  Younggeun SONG ,  Ilyoung YOON ,  Yongjin LEE

IPC: H10B12/00

Abstract: In a method for manufacturing a semiconductor device, comprising; forming mold insulation patterns on a substrate, forming an oxide semiconductor layer conformally on sidewalls and upper surfaces of the mold insulation patterns and the substrate, forming a first metal oxide layer on the oxide semiconductor layer, patterning the first sacrificial layer, the first metal oxide layer, and the oxide semiconductor layer to form a first structure including a preliminary first metal oxide layer pattern, a preliminary oxide semiconductor layer pattern and a first sacrificial layer pattern stacked, forming a preliminary second metal oxide layer pattern selectively on a sidewall of the preliminary oxide semiconductor layer pattern, removing selective portions of the first structure and the preliminary second metal oxide layer pattern to form an oxide semiconductor layer pattern, a first metal oxide layer pattern, and a second metal oxide layer pattern.

公开(公告)号：US20240244831A1

公开(公告)日：2024-07-18

申请号：US18239268

申请日：2023-08-29

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Younggeun SONG ,  Sanghoon UHM ,  Yongjin LEE ,  Min Hee CHO

IPC: H10B12/00

CPC classification number: H10B12/482 ,  H10B12/02 ,  H10B12/315 ,  H10B12/488 ,  H10B12/50

Abstract: A semiconductor device includes a bit line extending in a first direction on a substrate. A first insulating pattern is disposed on the bit line. A channel pattern is disposed on an upper side of the bit line and a lateral side of the first insulating pattern. The channel pattern includes an oxide semiconductor material. A gate insulating pattern is disposed on the channel pattern. Word lines are disposed on the gate insulating pattern. A second insulating pattern is disposed on the word lines. A landing pad is disposed on the channel pattern. An interlayer insulating layer disposed between the bit line and the channel pattern.

公开(公告)号：US20210034195A1

公开(公告)日：2021-02-04

申请号：US16759121

申请日：2018-10-19

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jeehoon LEE ,  Eungi MIN ,  Yongjin LEE ,  Suho LEE ,  Sukwang LIM ,  Hyungjoon LIM ,  Seungeun LEE

IPC: G06F3/044 ,  G06F3/041 ,  H03K17/96

Abstract: An electronic device according to various embodiments of the present invention may comprise: at least one electrode having conductivity; a capacitance sensor, at least one switch electrically connected between the at least one electrode and the capacitance sensor, and capable of selectively connecting the at least one electrode and the capacitance sensor; and a control circuit, wherein the control circuit measures a first capacitance value by using the capacitance sensor in a state where the at least one switch is open, measures a second capacitance value corresponding to an external object contacting the at least one electrode, by using the capacitance sensor in a state where the at least one switch is connected, corrects the second capacitance value by using the first capacitance value, and determines the corrected second capacitance value as a capacitance value for the external object. Various other embodiments are possible.

公开(公告)号：US20190064860A1

公开(公告)日：2019-02-28

申请号：US16170124

申请日：2018-10-25

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Gyu-Hyeong CHO ,  Yongjin LEE ,  Dae-Yong KIM ,  Sangho KIM

IPC: G05F1/56 ,  H03K21/02 ,  H03K5/1534

Abstract: A low dropout voltage (LDO) regulator including: a coarse loop circuit configured to receive an input voltage, generate a coarse code and adjust a coarse current according to the coarse code; a digital controller configured to receive the coarse code and generate a fine loop control signal according to the coarse code; and a fine loop circuit configured to receive the input voltage and the fine loop control signal and adjust a fine current according to the input voltage and the fine loop control signal, wherein the coarse current and the fine current adjust a level of an output voltage.

公开(公告)号：US20180235471A1

公开(公告)日：2018-08-23

申请号：US15896434

申请日：2018-02-14

Applicant: Samsung Electronics Co., Ltd.

Inventor： Injo JEONG ,  Jeahyuck LEE ,  Younghwan KIM ,  Seungeun LEE ,  Yongjin LEE ,  Bokun CHOI

IPC: A61B5/00 ,  A61B5/11 ,  A61B5/0205

CPC classification number: A61B5/0026 ,  A61B5/0006 ,  A61B5/0205 ,  A61B5/1116 ,  A61B5/1118 ,  A61B5/746 ,  G06K9/00013 ,  G06K9/00335 ,  G06K9/00362 ,  G06K9/00771 ,  G06K9/3233

Abstract: An electronic device and method are disclosed herein. The electronic device includes an image sensor, a radio frequency (RF) sensor, and a processor. The processor implements the method, including capturing an image including at least one object using an image sensor, determining an interest area of the at least one object included within the captured image, transmitting a radio frequency (RF) signal to at least a portion of the interest area using an RF sensor, receiving the transmitted RF signal reflected from the at least the portion of the interest area using the RF sensor, and obtaining biometric information for the at least one object based on the reflected RF signal.

公开(公告)号：US20230307551A1

公开(公告)日：2023-09-28

申请号：US18092973

申请日：2023-01-04

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sungwon YOO ,  Yongseok KIM ,  Min Tae RYU ,  Huije RYU ,  Yongjin LEE ,  Wonsok LEE ,  Min Hee CHO

IPC: H01L29/786 ,  H10B12/00 ,  H01L27/146 ,  H01L29/417

CPC classification number: H01L29/78693 ,  H01L27/10814 ,  H01L27/14616 ,  H01L29/41733 ,  H01L29/78696

Abstract: A semiconductor device includes a substrate, a gate electrode on the substrate, a channel layer between the substrate and the gate electrode, a source electrode in contact with a first sidewall of the channel layer, and a drain electrode in contact with a second sidewall of the channel layer. The second sidewall is opposite to the first sidewall. The channel layer includes a first channel pattern in contact with one of the source electrode and the drain electrode, and a second channel pattern between the first channel pattern and the gate electrode. The first channel pattern and the second channel pattern includes oxide semiconductor materials different from each other. A portion of the source electrode and a portion of the drain electrode overlap a portion of the gate electrode.