公开(公告)号：US11763879B2

公开(公告)日：2023-09-19

申请号：US17322065

申请日：2021-05-17

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yoonjee Kim ,  Seungyeon Kim ,  Sangwan Nam ,  Hongsoo Jeon ,  Jiho Cho

IPC: G11C11/4097 ,  G11C5/06 ,  G11C11/4093 ,  G11C11/408 ,  G11C11/4099

CPC classification number: G11C11/4097 ,  G11C5/06 ,  G11C11/4085 ,  G11C11/4087 ,  G11C11/4093 ,  G11C11/4099

Abstract: A memory device includes a peripheral circuit area including a first substrate and circuit elements on the first substrate, at least a portion of the circuit elements providing a source driver, and a cell area including a second substrate stacked with the peripheral circuit area in a first direction, perpendicular to an upper surface of the first substrate, and cell blocks and dummy blocks arranged in a second direction, parallel to an upper surface of the second substrate. Each of the cell blocks includes gate electrode layers and insulating layers alternately stacked on the second substrate, and channel structures extending in the first direction to penetrate through the gate electrode layers and the insulating layers and to be connected to the second substrate, at least one source contact block, among the dummy blocks, includes a first dummy insulating region on the second substrate, and source contacts extending in the first direction, penetrating through the first dummy insulating region and connected to the second substrate, and the source contacts are connected to the source driver through metal wirings in an upper portion of the cell area.