公开(公告)号：US20250129267A1

公开(公告)日：2025-04-24

申请号：US18924620

申请日：2024-10-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yoonseok KO ,  Jung Hoon LEE ,  Sang Soo JEE ,  Fedosya KALININA ,  Hyune Jea LEE

IPC: C09G1/02 ,  H01L21/321

Abstract: A polishing slurry, and a method of manufacturing a semiconductor device using the polishing slurry are provided. The polishing slurry includes nano-abrasive particles having a Mohs hardness greater than about 5, and soft particles having a Mohs hardness lower than the Mohs hardness of the nano-abrasive particles, and wherein the nano-abrasive particles and the soft particles have a same sign of zeta potentials as each other in the polishing slurry.

公开(公告)号：US20240067772A1

公开(公告)日：2024-02-29

申请号：US18383072

申请日：2023-10-24

Applicant: Samsung Electronics Co., Ltd.

Inventor： Changho NOH ,  Insu LEE ,  Songwon HYUN ,  Yoonseok KO ,  Mijeong KIM ,  Keechang LEE ,  Sangsoo JEE

IPC: C08G59/24 ,  C08K3/013 ,  C08G59/62 ,  C08L63/00

CPC classification number: C08G59/245 ,  C08K3/013 ,  C08G59/621 ,  C08L63/00 ,  C08G2170/00 ,  C08G2190/00 ,  C08K2201/001 ,  C08L2203/206

Abstract: An epoxy compound having an aromatic ring represented by Formula 1 or Formula 2, a composition prepared from the epoxy compound, a semiconductor device prepared from the epoxy compound, an electronic device prepared from the epoxy compound, an article prepared from the epoxy compound, and a method of preparing the epoxy compound:


E1-(M1)a1-(L1)b1-(M2)a2-L2-A1-L3-(M3)a3-(L4)b2-(M4)a4-E2  Formula 1



E3-(A2)c1-(L5)b3-(M5)a5-L6-(M6)a6-L7-(M7)a7-(L8)b4-(A3)c2-E4  Formula 2

In Formulae 1 and 2, M1, M2, M3, M4, M5, M6, M7, A1, A2, A3, L1, L2, L3, L4, L5, L6, L7, L8, E1, E2, E3, E4, a1, a2, a3, a4, a5, a6, a7, b1, b2, b3, b4, c1, and c2 are the same as defined in the detailed description.