Electronic device and method for controlling the same

    公开(公告)号:US10418027B2

    公开(公告)日:2019-09-17

    申请号:US15782228

    申请日:2017-10-12

    Abstract: An electronic device is provided, which includes a storage configured to store a voice recognition application including a wakeup word for entering into a voice command recognition mode, a sensor configured to sense a sound signal, and a processor configured to convert the sound signal into a digital signal and to transfer the converted digital signal to the application, wherein the application identifies whether a characteristic value of the digital signal is equal to or higher than a predetermined threshold level if the digital signal is received, performs voice recognition for the digital signal if the characteristic value of the digital signal is equal to or higher than the predetermined threshold level, and activates the voice command recognition mode if a keyword of a voice included in the digital signal coincides with the wakeup word.

    Semiconductor device and method for manufacturing the same
    2.
    发明授权
    Semiconductor device and method for manufacturing the same 有权
    半导体装置及其制造方法

    公开(公告)号:US09570448B2

    公开(公告)日:2017-02-14

    申请号:US15191552

    申请日:2016-06-24

    Abstract: A method for manufacturing a semiconductor device includes forming a storage node hole passing through an upper support layer, a bowing prevention layer and an upper mold layer using a dry etching process, forming a lower electrode in the storage node hole, patterning the upper support layer and the bowing prevention layer to expose a portion of the upper mold layer, removing the upper mold layer and at least a portion of the bowing prevention layer using a first wet etching process, and sequentially forming a dielectric layer and an upper electrode that cover the lower electrode. An etch rate of the bowing prevention layer may be substantially equal to an etch rate of the upper support layer during the dry etching process. An etch rate of the bowing prevention layer may be higher than an etch rate of the upper support layer during the first wet etching process.

    Abstract translation: 一种半导体装置的制造方法,其特征在于,包括:通过干式蚀刻工序形成穿过上支撑层,弓形防止层和上模层的存储节点孔,在所述存储节点孔中形成下电极,使所述上支撑层 以及所述弯曲防止层,以暴露所述上模层的一部分,使用第一湿蚀刻工艺去除所述上模层和所述防弓层的至少一部分,并且顺序地形成覆盖所述上模具层的电介质层和上电极 下电极。 弯曲防止层的蚀刻速率可以基本上等于在干蚀刻工艺期间上支撑层的蚀刻速率。 在第一湿法蚀刻工艺期间,防弓层的蚀刻速率可高于上支撑层的蚀刻速率。

    Variable resistance memory devices

    公开(公告)号:US10720470B2

    公开(公告)日:2020-07-21

    申请号:US16277385

    申请日:2019-02-15

    Abstract: There is provided a variable resistance memory device including a first electrode line layer including first electrode lines extending in a first direction and spaced apart from each other on a substrate, a second electrode line layer that is above the first electrode line layer and including second electrode lines extending in a second direction orthogonal to the first direction and spaced apart from each other, and a memory cell layer including memory cells between the first electrode line layer and the second electrode line layer. Each of the memory cells includes a selection device layer, an intermediate electrode layer, and a variable resistance layer. A first insulating layer is between the first electrode lines, a second insulating layer is between the memory cells, and a third insulating layer is between the second electrode lines. The second insulating layer includes air gaps on side surfaces of the memory cells.

    SEMICONDUCTOR DEVICE
    4.
    发明申请

    公开(公告)号:US20200083319A1

    公开(公告)日:2020-03-12

    申请号:US16679871

    申请日:2019-11-11

    Abstract: A semiconductor device includes a plurality of electrode structures formed on a substrate; and an upper supporter group and a lower supporter between upper ends and lower ends of the plurality of electrode structures The upper supporter group includes a plurality of supporters, and at least some of the plurality of supporters each have an upper surface and a lower surface. One of the upper surface and the lower surface has a curved profile, and the other surface has a flat profile.

    VARIABLE RESISTANCE MEMORY DEVICES
    6.
    发明申请

    公开(公告)号:US20200052038A1

    公开(公告)日:2020-02-13

    申请号:US16277385

    申请日:2019-02-15

    Abstract: There is provided a variable resistance memory device including a first electrode line layer including first electrode lines extending in a first direction and spaced apart from each other on a substrate, a second electrode line layer that is above the first electrode line layer and including second electrode lines extending in a second direction orthogonal to the first direction and spaced apart from each other, and a memory cell layer including memory cells between the first electrode line layer and the second electrode line layer. Each of the memory cells includes a selection device layer, an intermediate electrode layer, and a variable resistance layer. A first insulating layer is between the first electrode lines, a second insulating layer is between the memory cells, and a third insulating layer is between the second electrode lines. The second insulating layer includes air gaps on side surfaces of the memory cells.

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