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    METHOD OF INSPECTING SEMICONDUCTOR DEVICE
    2.
    发明申请
    METHOD OF INSPECTING SEMICONDUCTOR DEVICE 审中-公开

    公开(公告)号：US20190198404A1

    公开(公告)日：2019-06-27

    申请号：US16113554

    申请日：2018-08-27

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Min Kook KIM ,  Jun Chul KIM ,  Myung Suk UM ,  Yu Sin YANG ,  Ye Ny YIM

    IPC: H01L21/66 ,  G01B15/00 ,  H01L21/263 ,  H01L21/687 ,  G06T7/00

    Abstract: A method of inspecting a semiconductor device including setting a target place on a wafer, the target place including a deep trench, forming a first cut surface by performing first milling on the target place in a first direction, obtaining first image data of the first cut surface, forming a second cut surface by performing second milling on the target place in a second direction opposite to the first direction, obtaining second image data of the second cut surface, obtaining a plurality of first critical dimension (CD) values for the deep trench from the first image data, obtaining a plurality of second CD values for the deep trench from the second image data, analyzing a degree of bending of the deep trench based on the first CD values and the second CD values, and providing the semiconductor device meeting a condition based on results of the analyzing may be provided.

    SEMICONDUCTOR PATTERN DETECTING APPARATUS
    3.
    发明申请
    SEMICONDUCTOR PATTERN DETECTING APPARATUS 审中-公开

    公开(公告)号：US20200184618A1

    公开(公告)日：2020-06-11

    申请号：US16541380

    申请日：2019-08-15

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Jae Hyung AHN ,  Souk KIM ,  Joon Seo SONG ,  Young Hoon SOHN ,  Yu Sin YANG

    IPC: G06T7/00 ,  G06K9/62 ,  G06K9/20

    Abstract: A semiconductor pattern detecting apparatus is provided. The semiconductor pattern detecting apparatus includes a stage configured to position a wafer formed with a semiconductor pattern, the stage extending in a first direction and a second direction perpendicular to the first direction, an electron emitter configured to irradiate first electrons on the semiconductor pattern, an electrode configured to generate an electric field to induce an electric potential on a surface of the semiconductor pattern, a detector configured to detect second electrons emitted from the semiconductor pattern, an imager configured to obtain a plurality of first images by using the second electrons detected by the detector, and at least one controller configured to apply a first voltage and a second voltage different from the first voltage to the electrode alternately and repeatedly and to generate a second image by combining the plurality of first images, wherein the imager is so configured that each of the plurality of first images are obtained when the first voltage is applied to the electrode.

    OPTICAL MEASURING METHOD FOR SEMICONDUCTOR WAFER INCLUDING A PLURALITY OF PATTERNS AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE USING OPTICAL MEASUREMENT
    5.
    发明申请
    OPTICAL MEASURING METHOD FOR SEMICONDUCTOR WAFER INCLUDING A PLURALITY OF PATTERNS AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE USING OPTICAL MEASUREMENT 审中-公开

    公开(公告)号：US20190181062A1

    公开(公告)日：2019-06-13

    申请号：US16035991

    申请日：2018-07-16

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Jang Ik PARK ,  Bong Seok KIM ,  Souk KIM ,  Yu Sin YANG ,  Soo Seok LEE

    IPC: H01L21/66 ,  H01L21/78 ,  H01L21/762

    CPC classification number: H01L22/26 ,  H01L21/76224 ,  H01L21/78

    Abstract: A method of manufacturing a semiconductor device comprising: obtaining a raw light signal by selecting a predetermined wavelength band of light reflected from a wafer on which a plurality of patterns are formed; converting the raw light signal into a frequency domain; obtaining a first detection signal having a first frequency band from the raw light signal converted into the frequency domain; obtaining a second detection signal having a second frequency band from the raw light signal converted into the frequency domain, the second frequency band being different from the first frequency band; obtaining a representative value using the first detection signal, the representative value representing a profile of the plurality of patterns; and obtaining a distribution value using the second detection signal, the distribution value representing a profile of the plurality of patterns using the second detection signal. The method may include determining whether the representative value and the distribution value are within predetermined ranges respectively; and performing a following step of manufacturing the semiconductor device when the representative value and the distribution value are within respective predetermined ranges.

    SYSTEM AND METHOD FOR PROVIDING LIGHT
    6.
    发明申请
    SYSTEM AND METHOD FOR PROVIDING LIGHT 审中-公开
    用于提供光的系统和方法

    公开(公告)号：US20130214180A1

    公开(公告)日：2013-08-22

    申请号：US13768762

    申请日：2013-02-15

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Won Don JOO ,  Woo Seok KO ,  Yu Sin YANG ,  Sue Jin CHO ,  Sang Don JANG ,  Byeong Hwan JEON

    IPC: F21V13/04 ,  F21V7/00

    CPC classification number: F21V13/04 ,  F21V7/0025 ,  G01N21/8806 ,  G01N21/9501 ,  G01N2021/8845

    Abstract: An optical system includes a first light source to radiate light in a first wavelength band, a reflector to reflect light from the first light source, a second light source to radiate light in a second wavelength band, and a reflector reflect the second light source. The fourth reflector is set at a first position to allow light from the first light source to each the condenser lens and set to a second position to allow light from the second light source to reach the condenser lens.

    Abstract translation: 光学系统包括：第一光源，用于照射第一波长带中的光;反射器，用于反射来自第一光源的光;第二光源，用于辐射第二波长带中的光，反射器反射第二光源。 第四反射器被设置在第一位置以允许来自第一光源的光到每个聚光透镜并且被设置到第二位置，以允许来自第二光源的光到达聚光透镜。

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