Support platform of non-contact transfer apparatus
    1.
    发明申请
    Support platform of non-contact transfer apparatus 有权
    非接触式传送装置的支撑平台

    公开(公告)号:US20060284042A1

    公开(公告)日:2006-12-21

    申请号:US11454868

    申请日:2006-06-19

    IPC分类号: A47B91/00

    CPC分类号: B65G51/03

    摘要: There is provided a support platform of a non-contact transfer apparatus. The support platform of a non-contact transfer apparatus includes a plurality of first holes each having a plurality of sub-holes arranged in a radial direction and a plurality of second holes arranged in a line proximate the first holes.

    摘要翻译: 提供了非接触式传送装置的支撑平台。 非接触转印装置的支撑平台包括多个第一孔,每个第一孔具有沿径向布置的多个子孔,并且多个第二孔布置成靠近第一孔的线。

    Support platform of non-contact transfer apparatus
    2.
    发明申请
    Support platform of non-contact transfer apparatus 有权
    非接触式传送装置的支撑平台

    公开(公告)号:US20070045499A1

    公开(公告)日:2007-03-01

    申请号:US11455930

    申请日:2006-06-20

    IPC分类号: A47B91/00

    CPC分类号: H01L21/67784

    摘要: Provided is a support platform of a non-contact transfer apparatus. The support platform is arranged horizontally and includes first and second members adding a lift force to a first force for lifting peripheral portions of a transferred object, wherein the first force is lower than a second force lifting a central portion of the transferred object.

    摘要翻译: 提供一种非接触式传送装置的支撑平台。 支撑平台水平地布置,并且包括第一和第二构件,其将第一和第二构件加到用于提升转移物体的周边部分的第一力,其中第一力低于提升被转移物体的中心部分的第二力。

    Sputtering apparatus
    3.
    发明申请
    Sputtering apparatus 有权
    溅射装置

    公开(公告)号:US20070144890A1

    公开(公告)日:2007-06-28

    申请号:US11471782

    申请日:2006-06-21

    IPC分类号: C23C14/00

    摘要: A sputtering apparatus comprises a substrate unit that includes a substrate on which a target material is deposited in a chamber and a target unit on which a plurality of target sections formed of the target material are arranged. The sputtering apparatus further comprises a cathode plate that supplies electric power to surfaces of the plurality of target sections and a plurality of gas supply ports provided on regions between the plurality of target sections.

    摘要翻译: 溅射装置包括:基板单元,其包括其中在其中沉积靶材料的基板和其上布置有由目标材料形成的多个目标部分的目标单元。 溅射装置还包括向多个目标部分的表面提供电力的阴极板和设置在多个目标部分之间的区域上的多个气体供应端口。

    Processing apparatus
    4.
    发明申请
    Processing apparatus 有权
    处理装置

    公开(公告)号:US20070137793A1

    公开(公告)日:2007-06-21

    申请号:US11639224

    申请日:2006-12-15

    IPC分类号: C23F1/00 C23C16/00

    摘要: A processing apparatus includes a loading chamber; a buffer chamber connected to the loading chamber; a first process chamber connected to the buffer chamber; and an unloading chamber connected to the first process chamber, wherein a processing path through the processing apparatus is a forward in-line path in a direction through the loading chamber, the buffer chamber, the first process chamber, and the unloading chamber.

    摘要翻译: 一种处理装置,包括装载室; 连接到所述装载室的缓冲室; 连接到缓冲室的第一处理室; 以及连接到所述第一处理室的卸载室,其中通过所述处理装置的处理路径是沿着穿过所述装载室,所述缓冲室,所述第一处理室和所述卸载室的方向的前向一线路径。

    Sputtering apparatus
    5.
    发明申请
    Sputtering apparatus 审中-公开
    溅射装置

    公开(公告)号:US20070138009A1

    公开(公告)日:2007-06-21

    申请号:US11639223

    申请日:2006-12-15

    IPC分类号: C23C14/00

    摘要: A sputtering apparatus includes a cathode for generating a plasma; one or more target on a front surface of the cathode; a plurality of magnets at a first distance from a back of the cathode for generating a first magnetic field intensity in the plasma; and a plurality of guide members for moving the individual magnets in a direction substantially perpendicular to the cathode to a second distance from the back of the cathode to change the first magnetic field intensity to a second magnetic field intensity.

    摘要翻译: 溅射装置包括用于产生等离子体的阴极; 阴极前表面上的一个或多个靶; 多个磁体,距离阴极的第一距离,用于在等离子体中产生第一磁场强度; 以及多个引导构件,用于将各个磁体沿着与阴极基本垂直的方向移动到距离阴极的后面的第二距离,以将第一磁场强度改变为第二磁场强度。