摘要:
Provided is a support platform of a non-contact transfer apparatus. The support platform is arranged horizontally and includes first and second members adding a lift force to a first force for lifting peripheral portions of a transferred object, wherein the first force is lower than a second force lifting a central portion of the transferred object.
摘要:
There is provided a support platform of a non-contact transfer apparatus. The support platform of a non-contact transfer apparatus includes a plurality of first holes each having a plurality of sub-holes arranged in a radial direction and a plurality of second holes arranged in a line proximate the first holes.
摘要:
A sputtering apparatus comprises a substrate unit that includes a substrate on which a target material is deposited in a chamber and a target unit on which a plurality of target sections formed of the target material are arranged. The sputtering apparatus further comprises a cathode plate that supplies electric power to surfaces of the plurality of target sections and a plurality of gas supply ports provided on regions between the plurality of target sections.
摘要:
A sputtering apparatus for depositing a target material on a substrate includes a chamber, a target in the chamber to provide the target material, a carrier to carry the substrate in the chamber to face the target, and a plurality of masks arranged along sides of the carrier and being movable back and forth with respect to the carrier.
摘要:
A processing apparatus includes a loading chamber; a buffer chamber connected to the loading chamber; a first process chamber connected to the buffer chamber; and an unloading chamber connected to the first process chamber, wherein a processing path through the processing apparatus is a forward in-line path in a direction through the loading chamber, the buffer chamber, the first process chamber, and the unloading chamber.
摘要:
A sputtering apparatus includes a cathode for generating a plasma; one or more target on a front surface of the cathode; a plurality of magnets at a first distance from a back of the cathode for generating a first magnetic field intensity in the plasma; and a plurality of guide members for moving the individual magnets in a direction substantially perpendicular to the cathode to a second distance from the back of the cathode to change the first magnetic field intensity to a second magnetic field intensity.
摘要:
A sputtering apparatus includes a susceptor for receiving a substrate, and a first target device disposed to be opposite to a center region of a substrate and at least second and third target devices disposed to be opposite to peripheral regions of the substrate, wherein the second and third target devices are rotatable.