公开(公告)号：US5721043A

公开(公告)日：1998-02-24

申请号：US473602

申请日：1995-06-07

申请人： Scott R. Summerfelt ,  Howard R. Beratan ,  Bernard M. Kulwicki

发明人： Scott R. Summerfelt ,  Howard R. Beratan ,  Bernard M. Kulwicki

IPC分类号： H01G4/12 ,  H01L21/316 ,  B32B3/00

CPC分类号： H01L21/31691 ,  H01G4/1227 ,  Y10T428/24926

摘要： The invention described is an improved dielectric material formed as a film on the surface of a substrate by adding lead to an original perovskite material having an original critical grain size to form a lead enhanced perovskite material, then forming a layer of the lead enhanced perovskite material having an average grain size less than the original critical grain size whereby the dielectric constant of the layer is substantially greater than the dielectric constant of the original perovskite material with an average grain size similar to the average grain size of the layer. The critical grain size, as used herein, means the largest grain size such that the dielectric constant starts to rapidly decrease with decreasing grain sizes. Preferably, the lead enhanced perovskite material is further doped with one or more acceptor dopants whereby the resistivity is substantially increased and/or the loss tangent is substantially decreased. Preferably, the original perovskite material has a chemical composition ABO.sub.3, where A is one or more monovalent, divalent or trivalent elements, and B is one or more pentavalent, tetravalent, trivalent or divalent elements.

摘要翻译： 本发明描述了一种改进的电介质材料，其通过将铅添加到具有原始临界晶粒尺寸的原始钙钛矿材料以形成铅增强的钙钛矿材料，然后形成一层铅增强的钙钛矿材料，在基底表面上形成为膜 其平均晶粒尺寸小于原始临界晶粒尺寸，由此该层的介电常数基本上大于原始钙钛矿材料的介电常数，其平均晶粒尺寸与层的平均晶粒尺寸相似。 如本文所用，临界晶粒尺寸是指最大的晶粒尺寸，使得随着晶粒尺寸的减小，介电常数开始迅速降低。 优选地，铅增强的钙钛矿材料进一步掺杂有一种或多种受体掺杂剂，由此电阻率显着增加和/或损耗角正切减小。 优选地，原始钙钛矿材料具有化学组成ABO 3，其中A是一个或多个一价，二价或三价元素，B是一种或多种五价，四价，三价或二价元素。

公开(公告)号：US06432473B1

公开(公告)日：2002-08-13

申请号：US08458999

申请日：1995-06-01

申请人： Scott R. Summerfelt ,  Howard R. Beratan ,  Bernard M. Kulwicki

发明人： Scott R. Summerfelt ,  Howard R. Beratan ,  Bernard M. Kulwicki

IPC分类号： B05D512

CPC分类号： H01L27/11502 ,  H01G4/1227 ,  H01L21/02197 ,  H01L21/31691

摘要： The invention described is a method of forming an improved dielectric material by adding lead to an original perovskite material having an original critical grain size to form a lead enhanced perovskite material, then forming a layer of the lead enhanced perovskite material having an average grain size less than the original critical grain size whereby the dielectric constant of the layer is substantially greater than the dielectric constant of the original perovskite material with an average grain size similar to the average grain size of the layer. The critical grain size, as used herein, means the largest grain size such that the dielectric constant starts to rapidly decrease with decreasing grain sizes. Preferably, the lead enhanced perovskite material is further doped with one or more acceptor dopants whereby the resistivity is substantially increased and/or the loss tangent is substantially decreased. Preferably, the original perovskite material has a chemical composition ABO3, where A is one or more monovalent, divalent or trivalent elements, and B is one or more pentavalent, tetravalent, trivalent or divalent elements.

摘要翻译： 本发明描述了一种通过将铅添加到具有原始临界晶粒尺寸的原始钙钛矿材料以形成铅增强的钙钛矿材料形成改进的介电材料的方法，然后形成平均晶粒尺寸较小的铅增强的钙钛矿材料层 比原始的临界晶粒大小，由此该层的介电常数基本上大于原始钙钛矿材料的介电常数，平均晶粒尺寸与层的平均晶粒尺寸相似。 如本文所用，临界晶粒尺寸是指最大的晶粒尺寸，使得随着晶粒尺寸的减小，介电常数开始迅速降低。 优选地，铅增强的钙钛矿材料进一步掺杂有一种或多种受体掺杂剂，由此电阻率显着增加和/或损耗角正切减小。 优选地，原始钙钛矿材料具有化学组成ABO 3，其中A是一个或多个一价，二价或三价元素，B是一种或多种五价，四价，三价或二价元素。

公开(公告)号：US5888659A

公开(公告)日：1999-03-30

申请号：US477722

申请日：1995-06-07

申请人： Scott R. Summerfelt ,  Howard R. Beratan ,  Bernard M. Kulwicki

发明人： Scott R. Summerfelt ,  Howard R. Beratan ,  Bernard M. Kulwicki

IPC分类号： C04B35/465 ,  B32B17/00

CPC分类号： C04B35/465

摘要： The invention forms improved ferroelectric (or pyroelectric) material by doping an intrinsic perovskite material having an intrinsic ferroelectric (or pyroelectric) critical grain size with one or more donor dopants, then forming a layer of the donor doped perovskite material having an average grain size less than the intrinsic ferroelectric (or pyroelectric) critical gran size whereby the remanent polarization (or pyroelectric figure of merit) of the layer is substantially greater than the remanent polarization (or pyroelectric figure of merit) of the intrinsic perovskite material with an average grain size similar to the average grain size of the layer. The critical ferroelectric (or pyroelectric) grain size, as used herein, means the largest grain size such that the remanent polarization (or pyroelectric figure of merit) starts to rapidly decrease with decreasing grain sizes. Preferably, the donor doped perovskite material is further doped with one or more acceptor dopants to form a donor acceptor doped perovskite material whereby the resistivity is substantially increased. Preferably, the intrinsic perovskite material has a chemical composition AB03, where A is one or more monovalent, divalent or trivalent elements, and B is one or more pentavalent, tetravalent, trivalent or divalent elements. Structures containing an improved ferroelectric (or pyroelectric) material include a layer of donor doped perovskite material with average grain size less than the intrinsic ferroelectric (or pyroelectric) critical grain size formed on the surface of a substrate. Other structures include such a layer of donor doped material interposed between two electrically conducting layers.

摘要翻译： 本发明通过将具有本征铁电（或热电）临界晶粒尺寸的固有钙钛矿材料与一种或多种施主掺杂剂掺杂形成改进的铁电（或热释电）材料，然后形成具有平均晶粒尺寸的施主掺杂钙钛矿材料层 比本征铁电（或热电）临界颗粒大小，其中层的剩余极化（或热释电特性）基本上大于固有钙钛矿材料的剩余极化（或热释电特性），其平均晶粒尺寸类似 到该层的平均晶粒尺寸。 如本文所用，临界铁电（或热电）晶粒尺寸是指最大的晶粒尺寸，使得剩余极化（或热释电品质）开始随着晶粒尺寸的减小而迅速降低。 优选地，施主掺杂的钙钛矿材料进一步掺杂有一种或多种受体掺杂剂以形成掺杂掺杂的钙钛矿材料的受体掺杂物，由此电阻率显着增加。 优选地，本征钙钛矿材料具有化学组成AB03，其中A是一个或多个一价，二价或三价元素，B是一种或多种五价，四价，三价或二价元素。 包含改进的铁电（或热释电）材料的结构包括施主掺杂的钙钛矿材料层，其平均晶粒尺寸小于在衬底表面上形成的本征铁电（或热电）临界晶粒尺寸。 其他结构包括介于两个导电层之间的施主掺杂材料层。

公开(公告)号：US4401879A

公开(公告)日：1983-08-30

申请号：US236389

申请日：1981-02-20

申请人： Vishwa N. Shukla ,  Bernard M. Kulwicki

发明人： Vishwa N. Shukla ,  Bernard M. Kulwicki

IPC分类号： F02M31/135 ,  H05B3/14 ,  B60L1/02

CPC分类号： H05B3/141 ,  F02M31/135 ,  Y02T10/126

摘要： A fuel supply system having means for furnishing a mixture of air and alcohol or gasohol fuels to an automotive engine has a self-regulating, ceramic, electrical resistance heater for enhancing fuel evaporation during cold engine starting and incorporates a heater of improved structure to maintain stable heating properties in the alcohol-based system over a long service life. The heater has thin, all-metal contacts of electroless, deposited nickel formed directly on a ceramic material of positive temperature coefficient of resistivity in ohmic contact relation to the ceramic material and has a thin, substantially pore-free outer coating of electrolytically deposited nickel covering and shielding the ohmic contacts from the effects of an alcohol vapor atmosphere, whereby the ohmic contacts retain their contacting properties during thermal cycling in engagement with the oxygen-rich ceramic material and in the alcohol atmosphere so that the fuel supply system maintains uniform fuel evaporation properties over a long service life.

摘要翻译： 具有用于向汽车发动机提供空气和醇或汽油燃料的混合物的装置的燃料供应系统具有用于在冷启动期间增强燃料蒸发的自调节陶瓷电阻加热器，并且包括改进结构的加热器以保持稳定 酒精系统的使用寿命长。 该加热器具有薄的全金属接触，无电沉积的镍直接形成在与陶瓷材料欧姆接触关系的正温度系数电阻率的陶瓷材料上，并且具有薄的，基本上无孔的电解沉积镍覆盖层的外涂层 并且将欧姆接触屏蔽在酒精蒸汽气氛的作用下，由此在与富氧陶瓷材料接合的热循环期间和在醇气氛中欧姆接触保持其接触性能，使得燃料供应系统保持均匀的燃料蒸发性能 使用寿命长。

公开(公告)号：US4717813A

公开(公告)日：1988-01-05

申请号：US852478

申请日：1986-04-16

申请人： Peter G. Berg ,  Leo Marcoux ,  Bernard M. Kulwicki

发明人： Peter G. Berg ,  Leo Marcoux ,  Bernard M. Kulwicki

IPC分类号： H05B3/14 ,  H01C7/02 ,  H05B3/08

CPC分类号： H05B3/141

摘要： A resistor particularly useful as a multiphase, self-regulating fluid heater has passages extending through a body of ceramic resistance material of positive temperature coefficient of resistivity (PTC) for heating fluid adapted to pass therethrough. Several embodiments are provided with electrically conductive coatings formed on inner walls of the passages with the passage walls defining thin webs of the resistance material having uniform thickness from end to end. The passages are arranged in a plurality of sets with the conductive coating on the walls of the passages of each set interconnected and adapted for electrical connection with a respective electrical phase. The passages of the sets are alternated relative to one another throughout the body with a passage of one set immediately adjacent only to passages of other sets. The passages are configured in different embodiments including hexagonal, triangular and rectangular as seen in plan view showing one end of the body. Other embodiments have electrically conductive coatings formed on opposite end faces of the body. In one embodiment the coating on one face serves as a common connection while the coating on the other face is separated into portions electrically isolated form one another with each portion adapted to be electrically connected to a respective phase. The latter embodiment is particularly suited for a wye electrical connection while the former embodiments are well suited for delta connections. In another embodiment, particularly suited for a delta connection, the conductive portions on one face are angularly disposed a selected amount relative to the conductive portions on the other face.

摘要翻译： 特别可用作多相自调节流体加热器的电阻器具有延伸通过正温度系数电阻率（PTC）的陶瓷电阻材料体的通道，用于加热流过其中的流体。 提供了形成在通道的内壁上的导电涂层的几个实施例，其中通道壁限定电阻材料的薄腹板，其端部至端部具有均匀的厚度。 通道布置成多个组，每个组的通道的壁上的导电涂层互连并适于与相应的电相电连接。 组的通道相对于彼此相对于整个身体交替，其中一组的通道紧邻其他组的通道。 通道配置在包括六边形，三角形和矩形的不同实施例中，如在平面图中看到的，示出了主体的一端。 其他实施例具有形成在主体的相对端面上的导电涂层。 在一个实施例中，一个表面上的涂层用作公共连接，而另一个表面上的涂层被分离成彼此电隔离的部分，每个部分适于电连接到相应的相。 后一个实施例特别适用于一个圆形电连接，而前面的实施例非常适合于三角形连接。 在另一个实施例中，特别适用于三角形连接，一个面上的导电部分相对于另一个面上的导电部分以一定角度设置。

公开(公告)号：US06331325B1

公开(公告)日：2001-12-18

申请号：US08315454

申请日：1994-09-30

申请人： Bernard M. Kulwicki ,  Robert Tsu

发明人： Bernard M. Kulwicki ,  Robert Tsu

IPC分类号： B05D512

CPC分类号： H01L28/56 ,  H01L28/55 ,  Y10T29/417 ,  Y10T29/43

摘要： A semiconductor device and process for making the same are disclosed which incorporate boron, which has been found to be substantially insoluble in BST, into a BST dielectric film 24. Dielectric film 24 is preferably disposed between electrodes 18 and 26 (which preferably have a Pt layer contacting the BST) to form a capacitive structure with a relatively high dielectric constant and relatively low leakage current. Boron included in a BST precursor may be used to form boron oxide in a second phase 30, which is distributed in boundary regions between BST crystals 28 in film 24. It is believed that the inclusion of boron allows for BST grains of a desired size to be formed at lower temperature, and also reduces the leakage current of the capacitive structure.

摘要翻译： 公开了一种半导体器件及其制造方法，其将已经发现基本上不溶于BST的硼掺入到BST电介质膜24中。电介质膜24优选地设置在电极18和26之间（其优选地具有Pt 层接触BST）以形成具有相对高的介电常数和相对低的漏电流的电容结构。 包含在BST前体中的硼可以用于在第二相30中形成氧化硼，第二相30分布在膜24中的BST晶体28之间的边界区域。据信含硼的硼允许所需尺寸的BST晶粒 在较低温度下形成，并且还可以减小电容结构的漏电流。

公开(公告)号：US5617290A

公开(公告)日：1997-04-01

申请号：US485258

申请日：1995-06-07

申请人： Bernard M. Kulwicki ,  Robert Tsu

发明人： Bernard M. Kulwicki ,  Robert Tsu

IPC分类号： C04B35/46 ,  H01B3/12 ,  H01G4/12 ,  H01G4/33 ,  H01L21/02 ,  H01G4/06

CPC分类号： H01L28/56 ,  H01L28/55 ,  Y10T29/417 ,  Y10T29/43

摘要： A semiconductor device and process for making the same are disclosed which incorporate boron, which has been found to be substantially insoluble in BST, into a BST dielectric film 24. Dielectric film 24 is preferably disposed between electrodes 18 and 26 (which preferably have a Pt layer contacting the BST) to form a capacitive structure with a relatively high dielectric constant and relatively low leakage current. Boron included in a BST precursor may be used to form boron oxide in a second phase 30, which is distributed in boundary regions between BST crystals 28 in film 24. It is believed that the inclusion of boron allows for BST grains of a desired size to be formed at lower temperature, and also reduces the leakage current of the capacitive structure.

摘要翻译： 公开了一种半导体器件及其制造方法，其将已经发现基本上不溶于BST的硼掺入到BST电介质膜24中。电介质膜24优选地设置在电极18和26之间（其优选地具有Pt 层接触BST）以形成具有相对高的介电常数和相对低的漏电流的电容结构。 包含在BST前体中的硼可以用于在第二相30中形成氧化硼，第二相30分布在膜24中的BST晶体28之间的边界区域。据信含硼的硼允许所需尺寸的BST晶粒 在较低温度下形成，并且还可以减小电容结构的漏电流。

公开(公告)号：US5368834A

公开(公告)日：1994-11-29

申请号：US106259

申请日：1993-08-13

申请人： Bernard M. Kulwicki ,  David F. Lynch ,  Stanley J. Lukasiewicz

发明人： Bernard M. Kulwicki ,  David F. Lynch ,  Stanley J. Lukasiewicz

IPC分类号： C01G23/00

CPC分类号： C01G23/006 ,  C01P2002/72 ,  C01P2004/02 ,  C01P2004/34 ,  C01P2006/10

摘要： Titanate ceramic materials are made by forming a common solution (10) of barium acetate, strontium acetate, isopropyl titanate, lactic acid and water, forming a mist of particles of approximately 50 um or smaller, directing a carrier stream of gas (14) through the mist into a reaction zone in a furnace (20) where the material is pyrolyzed and then collected as a powder in a filter (24) or deposited onto a substrate. The tetra-isopropyl titanate and lactic acid may be replaced by commercially available titanium ammonium lactate. In a first embodiment the carrier gas is an oxidizing gas while in a second embodiment it is an inert gas resulting in powder having greater density.

摘要翻译： 钛酸钡陶瓷材料通过形成乙酸钡，乙酸锶，异丙基钛酸酯，乳酸和水的共同溶液（10）而形成，形成大约50微米或更小的颗粒雾，引导气体（14）的载气流通过 烟雾进入炉（20）中的反应区，其中材料被热解，然后作为粉末收集在过滤器（24）中或沉积到基底上。 钛酸四异丙酯和乳酸可以由市售的乳酸铵铵代替。 在第一实施方案中，载气是氧化气体，而在第二实施方案中，它是惰性气体，导致具有更大密度的粉末。

公开(公告)号：US4180901A

公开(公告)日：1980-01-01

申请号：US879828

申请日：1978-02-21

申请人： Bernard M. Kulwicki

发明人： Bernard M. Kulwicki

IPC分类号： F02M31/135 ,  H01C1/14 ,  H01C7/02 ,  H05B3/10 ,  H05B3/08

CPC分类号： F02M31/135 ,  H01C1/1406 ,  H01C7/022 ,  H05B3/10 ,  H05B2203/02 ,  Y02T10/126 ,  Y10T29/49082 ,  Y10T29/49101

摘要： A compact resistor device comprises a body of ceramic material of positive temperature coefficient of resistivity having a large number of passages extending through the body between opposite ends of the body, thereby forming very thin webs of the resistor material between adjacent passages. Coatings are formed on the resistor material along the inner walls of the passages to serve as ohmic contacts. The coatings in alternate passages are connected together at one end of the resistor device and the coatings in the other passages are connected together at the opposite end of the device to serve as device terminals. When the device terminals are connected to a power source, current flows through very thin webs of resistor material between ohmic contacts in adjacent body passages. The resistor device is particularly useful in current limiting applications requiring low, room-temperature resistance and in heat-exchanger applications where a fluid to be heated is directed through the passages.

公开(公告)号：US5731220A

公开(公告)日：1998-03-24

申请号：US474614

申请日：1995-06-07

申请人： Robert Tsu ,  Bernard M. Kulwicki

发明人： Robert Tsu ,  Bernard M. Kulwicki

IPC分类号： C04B35/46 ,  H01B3/12 ,  H01L21/02 ,  H01L21/70

CPC分类号： H01L28/56 ,  H01L28/55

摘要： A semiconductor device and process for making the same are disclosed which incorporate a relatively large percentage of erbium dopant (1 to 5%) into a BST dielectric film 24 with small grain size (e.g. 10 nm to 50 nm). Dielectric film 24 is preferably disposed between electrodes 18 and 26 (which preferably have a Pt layer contacting the BST) to form a capacitive structure with a relatively high dielectric constant and relatively low leakage current. Apparently, properties of the thin film deposition and small grain size. including temperatures well below bulk BST sintering temperatures, allow the film to support markedly higher defect concentrations without erbium precipitation than are observed for bulk BST. For erbium doping levels generally between 1% and 3%, over an order of magnitude decrease in leakage current (compared to undoped BST) may be achieved for such films.

摘要翻译： 公开了一种半导体器件及其制造方法，其将相对较大百分比的铒掺杂剂（1至5％）掺入具有小晶粒尺寸（例如10nm至50nm）的BST电介质膜24中。 电介质膜24优选地设置在电极18和26（其优选地具有接触BST的Pt层）之间，以形成具有相对高的介电常数和相对低的漏电流的电容结构。 显然，薄膜沉积的性质和晶粒尺寸小。 包括远低于体积BST烧结温度的温度，允许薄膜支持显着更高的缺陷浓度，而不会比块BST观察到的铒沉淀。 对于通常在1％和3％之间的铒掺杂水平，对于这种膜，可以实现一个数量级的漏电流下降（与未掺杂的BST相比）。