Abstract:
A PTC thermistor device has a PTC thermistor member and electrodes. The electrodes, are formed on respective surfaces of the PTC thermistor member. The PTC thermistor member contains a matrix phase, and conductive particles dispersed throughout the matrix phase. The matrix phase contains an electrically insulating first inorganic material and an electrically insulating second inorganic material. The first inorganic material undergoes phase transition in terms of crystal structure type and change in volume, at the phase transition temperature thereof. The second inorganic material is fibrous.
Abstract:
A PTC thermistor device has a PTC thermistor member and electrodes. The electrodes, are formed on respective surfaces of the PTC thermistor member. The PTC thermistor member contains a matrix phase, and conductive particles dispersed throughout the matrix phase. The matrix phase contains an electrically insulating first inorganic material and an electrically insulating second inorganic material. The first inorganic material undergoes phase transition in terms of crystal structure type and change in volume, at the phase transition temperature thereof. The second inorganic material is fibrous.
Abstract:
A surface mountable over-current protection device having upper and lower surfaces comprises a PTC device, first and second electrodes, and first and second circuits. The PTC device comprises a PTC material layer and first and second conductive layers. The PTC material layer is disposed between the conductive layers and comprises crystalline polymer and conductive filler dispersed therein. The first electrode comprises a pair of first metal foils, whereas the second electrode comprises a pair of second metal foils. The first circuit connects the first electrode and conductive layer, and has a first planar line extending horizontally. The second circuit connects the second electrode and conductive layer, and has a second planar line extending horizontally. At least one of the planar lines has a thermal resistance sufficient to mitigate heat dissipation by which the over-current protection device undergoes a test at 25° C. and 8 amperes can trip within 60 seconds.
Abstract:
The present invention relates to a conductive polymer composition for a PTC element with decreased NTC characteristics, using carbon nanotubes, a PTC binder resin, and a cellulose-based or polyester-based resin for fixing the carbon nanotubes and the PTC binder, and to a PTC element, a circuit and a sheet heating element using the same.
Abstract:
In one aspect, a negative voltage coefficient resistor is provided. The negative voltage coefficient resistor includes an insulative layer positioned between a polycrystalline silicon resistive layer and a silicide layer. Upon application of an appropriate voltage bias at the silicide layer of the resistor, a tunneling current is established across the insulative layer and is supplied to the polycrystalline silicon resistive layer. The tunneling current limits the current flow through the polycrystalline silicon layer, producing a resistor having a negative voltage coefficient of resistance and a reduced temperature coefficient of resistance.
Abstract:
A high temperature hybrid-circuit structure includes a temperature sensitive device which comprises SiC, AlN and/or AlxGa1nullxN(x>0.69) connected by electrodes to an electrically conductive mounting layer that is physically bonded to an AlN die. The die, temperature sensitive device and mounting layer (which can be W, WC or W2C) have temperature coefficients of expansion within 1.06 of each other. The mounting layer can consist entirely of a W, WC or W2C adhesive layer, or an adhesive layer with an overlay metallization having a thermal coefficient of expansion not greater than about 3.5 times that of the adhesive layer. The device can be encapsulated with a reacted borosilicate mixture, with or without an upper die which helps to hold on lead wires and increases structural integrity. Applications include temperature sensors, pressure sensors, chemical sensors, and high temperature and high power electronic circuits.
Abstract:
A lagging device, comprises a flexible and insulating pad; anode plate and cathode plate arranged in parallel on the top surface of the pad; a plurality of PTC ceramic resistor arranged cross the anode plate and the cathode plate. Each resistor has anode and cathode in contact with the anode plate and the cathode plate, respectively. The lagging device further has an isolation layer covering at least the topside of the pad. The inventive lagging device can be easily applied to curve surface.
Abstract:
The PTC thermistor material of the invention comprises a matrix phase and electrically conductive phases substantially uniformly dispersed in the matrix phase, said conductive phases having a resistivity lower than that of the matrix phase, and has a resistivity changing sharply in the vicinity of the melting point of the conductive phases. The matrix phase is made up of any one of a polycrystalline ceramic material, a glass-polycrystalline ceramic composite material, a glass, a crystallized glass, and a polymer material, and the conductive phases are made up of a metal containing bismuth as a main component. It is thus possible to achieve a PTC thermistor material which can be controlled in terms of various properties such as the temperature at which PTCR property becomes available and the rate of resistivity change and so can be applied to circuit parts through which large currents pass in a normal operation state. Further, the PTC thermistor material can be easily manufactured with the stable PTCR property maintained. Furthermore, the PTC thermistor material can be operated with an increased rated current albeit being of small size, and has a high degree of shape freedom.
Abstract:
Device comprising a substrate and a metallized sensor/heater element having a temperature coefficient of resistance of at least 2000 parts per million. Methods of fabricating the devices are also disclosed.
Abstract:
A PTC ceramic composition comprising a fundamental component represented by the formula:(V.sub.1-x A.sub.x).sub.2 O.sub.3wherein x is a value within the range of 0.ltoreq.x.ltoreq.0.02 and A is at least one of Cr and Al, and tin in an amount of 1 to 25 % by weight based on the total weight of the composition, has a small electric resistance in the low resistance state, good PTC properties, and a high density.