PTC thermistor member
    1.
    发明授权

    公开(公告)号:US09870850B2

    公开(公告)日:2018-01-16

    申请号:US14889655

    申请日:2014-04-25

    CPC classification number: H01C7/021 H01C7/008 H01C7/02 H01C7/022

    Abstract: A PTC thermistor device has a PTC thermistor member and electrodes. The electrodes, are formed on respective surfaces of the PTC thermistor member. The PTC thermistor member contains a matrix phase, and conductive particles dispersed throughout the matrix phase. The matrix phase contains an electrically insulating first inorganic material and an electrically insulating second inorganic material. The first inorganic material undergoes phase transition in terms of crystal structure type and change in volume, at the phase transition temperature thereof. The second inorganic material is fibrous.

    PTC THERMISTOR MEMBER
    2.
    发明申请
    PTC THERMISTOR MEMBER 有权
    PTC热敏电阻器

    公开(公告)号:US20160118166A1

    公开(公告)日:2016-04-28

    申请号:US14889655

    申请日:2014-04-25

    CPC classification number: H01C7/021 H01C7/008 H01C7/02 H01C7/022

    Abstract: A PTC thermistor device has a PTC thermistor member and electrodes. The electrodes, are formed on respective surfaces of the PTC thermistor member. The PTC thermistor member contains a matrix phase, and conductive particles dispersed throughout the matrix phase. The matrix phase contains an electrically insulating first inorganic material and an electrically insulating second inorganic material. The first inorganic material undergoes phase transition in terms of crystal structure type and change in volume, at the phase transition temperature thereof. The second inorganic material is fibrous.

    Abstract translation: PTC热敏电阻器件具有PTC热敏电阻元件和电极。 电极形成在PTC热敏电阻元件的各个表面上。 PTC热敏电阻构件包含基质相,并且导电颗粒分散在整个基体相中。 基质相包含电绝缘的第一无机材料和电绝缘的第二无机材料。 第一种无机材料的晶体结构类型和体积变化在其相变温度下经历相变。 第二种无机材料是纤维状的。

    SURFACE MOUNTABLE OVER-CURRENT PROTECTION DEVICE
    3.
    发明申请
    SURFACE MOUNTABLE OVER-CURRENT PROTECTION DEVICE 有权
    表面安装的过流保护装置

    公开(公告)号:US20140118871A1

    公开(公告)日:2014-05-01

    申请号:US13901100

    申请日:2013-05-23

    Abstract: A surface mountable over-current protection device having upper and lower surfaces comprises a PTC device, first and second electrodes, and first and second circuits. The PTC device comprises a PTC material layer and first and second conductive layers. The PTC material layer is disposed between the conductive layers and comprises crystalline polymer and conductive filler dispersed therein. The first electrode comprises a pair of first metal foils, whereas the second electrode comprises a pair of second metal foils. The first circuit connects the first electrode and conductive layer, and has a first planar line extending horizontally. The second circuit connects the second electrode and conductive layer, and has a second planar line extending horizontally. At least one of the planar lines has a thermal resistance sufficient to mitigate heat dissipation by which the over-current protection device undergoes a test at 25° C. and 8 amperes can trip within 60 seconds.

    Abstract translation: 具有上表面和下表面的可表面安装的过流保护装置包括PTC装置,第一和第二电极以及第一和第二电路。 PTC器件包括PTC材料层和第一和第二导电层。 PTC材料层设置在导电层之间并且包含分散在其中的结晶聚合物和导电填料。 第一电极包括一对第一金属箔,而第二电极包括一对第二金属箔。 第一电路连接第一电极和导电层,并且具有水平延伸的第一平面线。 第二电路连接第二电极和导电层,并且具有水平延伸的第二平面线。 平面线中的至少一个具有足以减轻过热保护装置在25℃下经受测试的散热的热阻,并且8安培可以在60秒内跳闸。

    Negative voltage coefficient resistor and method of manufacture
    5.
    发明授权
    Negative voltage coefficient resistor and method of manufacture 有权
    负电压系数电阻和制造方法

    公开(公告)号:US07642892B1

    公开(公告)日:2010-01-05

    申请号:US11373374

    申请日:2006-03-10

    Applicant: Soon Won Kang

    Inventor: Soon Won Kang

    CPC classification number: H01C7/006 H01C7/022 H01L27/0802 H01L28/24

    Abstract: In one aspect, a negative voltage coefficient resistor is provided. The negative voltage coefficient resistor includes an insulative layer positioned between a polycrystalline silicon resistive layer and a silicide layer. Upon application of an appropriate voltage bias at the silicide layer of the resistor, a tunneling current is established across the insulative layer and is supplied to the polycrystalline silicon resistive layer. The tunneling current limits the current flow through the polycrystalline silicon layer, producing a resistor having a negative voltage coefficient of resistance and a reduced temperature coefficient of resistance.

    Abstract translation: 一方面,提供负电压系数电阻。 负电压系数电阻器包括位于多晶硅电阻层和硅化物层之间的绝缘层。 当在电阻器的硅化物层处施加适当的电压偏压时,跨越绝缘层建立隧穿电流并提供给多晶硅电阻层。 隧道电流限制了流过多晶硅层的电流,产生具有负的电阻系数和电阻温度系数降低的电阻。

    Temperature sensing system with matched temperature coefficients of expansion

    公开(公告)号:US20030146502A1

    公开(公告)日:2003-08-07

    申请号:US10175940

    申请日:2002-06-20

    Applicant: Hetron

    Inventor: James D. Parsons

    CPC classification number: G01K7/16 H01C7/022 H01L2924/0002 H01L2924/00

    Abstract: A high temperature hybrid-circuit structure includes a temperature sensitive device which comprises SiC, AlN and/or AlxGa1nullxN(x>0.69) connected by electrodes to an electrically conductive mounting layer that is physically bonded to an AlN die. The die, temperature sensitive device and mounting layer (which can be W, WC or W2C) have temperature coefficients of expansion within 1.06 of each other. The mounting layer can consist entirely of a W, WC or W2C adhesive layer, or an adhesive layer with an overlay metallization having a thermal coefficient of expansion not greater than about 3.5 times that of the adhesive layer. The device can be encapsulated with a reacted borosilicate mixture, with or without an upper die which helps to hold on lead wires and increases structural integrity. Applications include temperature sensors, pressure sensors, chemical sensors, and high temperature and high power electronic circuits.

    Lagging device
    7.
    发明授权
    Lagging device 失效
    滞后装置

    公开(公告)号:US06278092B1

    公开(公告)日:2001-08-21

    申请号:US09474260

    申请日:1999-12-29

    Applicant: Chia-Hsiung Wu

    Inventor: Chia-Hsiung Wu

    Abstract: A lagging device, comprises a flexible and insulating pad; anode plate and cathode plate arranged in parallel on the top surface of the pad; a plurality of PTC ceramic resistor arranged cross the anode plate and the cathode plate. Each resistor has anode and cathode in contact with the anode plate and the cathode plate, respectively. The lagging device further has an isolation layer covering at least the topside of the pad. The inventive lagging device can be easily applied to curve surface.

    Abstract translation: 滞后装置包括柔性和绝缘垫; 阳极板和阴极板平行布置在垫的顶表面上; 多个PTC陶瓷电阻器布置成横跨阳极板和阴极板。 每个电阻器的阳极和阴极分别与阳极板和阴极板接触。 滞后装置还具有至少覆盖垫顶部的隔离层。 本发明的滞后装置可以容易地应用于曲面。

    PTC thermistor material
    8.
    发明授权
    PTC thermistor material 失效
    PTC热敏电阻材料

    公开(公告)号:US06218928B1

    公开(公告)日:2001-04-17

    申请号:US09068337

    申请日:1998-05-08

    Abstract: The PTC thermistor material of the invention comprises a matrix phase and electrically conductive phases substantially uniformly dispersed in the matrix phase, said conductive phases having a resistivity lower than that of the matrix phase, and has a resistivity changing sharply in the vicinity of the melting point of the conductive phases. The matrix phase is made up of any one of a polycrystalline ceramic material, a glass-polycrystalline ceramic composite material, a glass, a crystallized glass, and a polymer material, and the conductive phases are made up of a metal containing bismuth as a main component. It is thus possible to achieve a PTC thermistor material which can be controlled in terms of various properties such as the temperature at which PTCR property becomes available and the rate of resistivity change and so can be applied to circuit parts through which large currents pass in a normal operation state. Further, the PTC thermistor material can be easily manufactured with the stable PTCR property maintained. Furthermore, the PTC thermistor material can be operated with an increased rated current albeit being of small size, and has a high degree of shape freedom.

    Abstract translation: 本发明的PTC热敏电阻材料包括基体相和基本均匀分散在基体相中的导电相,所述导电相的电阻率低于基体相的电阻率,并且在熔点附近具有电阻率的急剧变化 的导电相。 基体相由多晶陶瓷材料,玻璃 - 多晶陶瓷复合材料,玻璃,结晶玻璃和聚合物材料中的任何一种构成,并且导电相由含有铋作为主体的金属构成 零件。 因此,可以实现一种PTC热敏电阻材料,其可以根据PTCR性质变得可用的温度和电阻率变化的温度等各种性质来控制,并且可以应用于大电流通过的电路部件 正常运行状态。 此外,可以容易地制造PTC热敏电阻材料,其保持稳定的PTCR性能。 此外,PTC热敏电阻材料可以以增加的额定电流工作,尽管尺寸小,并且具有高的形状自由度。

    PTC ceramic composition
    10.
    发明授权
    PTC ceramic composition 失效
    PTC陶瓷组合物

    公开(公告)号:US4642136A

    公开(公告)日:1987-02-10

    申请号:US699302

    申请日:1985-02-07

    CPC classification number: H01C7/022

    Abstract: A PTC ceramic composition comprising a fundamental component represented by the formula:(V.sub.1-x A.sub.x).sub.2 O.sub.3wherein x is a value within the range of 0.ltoreq.x.ltoreq.0.02 and A is at least one of Cr and Al, and tin in an amount of 1 to 25 % by weight based on the total weight of the composition, has a small electric resistance in the low resistance state, good PTC properties, and a high density.

    Abstract translation: 一种PTC陶瓷组合物,其包含由式(V1-xAx)2O3表示的基本组分,其中x是0≤x≤0.02的范围内的值,A是Cr和Al中的至少一种,以及锡 相对于组合物的总重量为1〜25重量%,在低电阻状态下具有小的电阻,良好的PTC性能和高密度。

Patent Agency Ranking