MAGNETORESISTIVE SENSOR FABRICATION
    1.
    发明申请
    MAGNETORESISTIVE SENSOR FABRICATION 审中-公开
    磁传感器制造

    公开(公告)号:US20160365104A1

    公开(公告)日:2016-12-15

    申请号:US14740116

    申请日:2015-06-15

    CPC classification number: G11B5/3912 G11B5/397 G11B5/3974 G11B5/398

    Abstract: Implementations described and claimed herein include a reader structure, comprising a first reader, including a sensor stack and a top shield structure, the top shield structure comprises a synthetic antiferromagnetic shield (SAF) structure, including a reference layer including at least a layer of NiFe and an impurity additive, an RKKY coupling layer RKKY coupling layer (e.g., Ru layer), and a pinned layer. In another implementation, the RL of the SAF shield structure of a first reader includes at least a layer of amorphous magnetic material. Yet, in another implementation, the SAF shield structure includes an insertion layer of amorphous magnetic material under the SAF shield RL, within the SAF shield RL or between the SAF shield RL and SAF shield Ru.

    Abstract translation: 本文描述和要求保护的实施方案包括读取器结构,包括第一读取器,包括传感器堆叠和顶部屏蔽结构,顶部屏蔽结构包括合成反铁磁屏蔽(SAF)结构,其包括至少包括一层NiFe 和杂质添加剂,RKKY耦合层RKKY耦合层(例如,Ru层)和钉扎层。 在另一实施方案中,第一读取器的SAF屏蔽结构的RL至少包括一层非晶磁性材料。 然而,在另一实施方式中,SAF屏蔽结构包括在SAF屏蔽RL之下,SAF屏蔽RL内或SAF屏蔽RL和SAF屏蔽Ru之间的非晶磁性材料的插入层。

    Magnetic element with reduced shield-to-shield spacing

    公开(公告)号:US10147447B2

    公开(公告)日:2018-12-04

    申请号:US15072489

    申请日:2016-03-17

    Abstract: A magnetic stack is disclosed. The magnetic stack includes a magnetically responsive lamination that includes a ferromagnetic free layer, a synthetic antiferromagnetic (SAF) structure, and a spacer layer positioned between the ferromagnetic free layer and the SAF structure. The magnetically responsive lamination is separated from a sensed data bit stored in an adjacent medium by an air bearing surface (ABS). The stack also includes a first antiferromagnetic (AFM) structure coupled to the SAF structure a predetermined offset distance from the ABS, and a second AFM structure that is separated from the first AFM structure by a first shield layer.

    Magnetic element with reduced shield-to-shield spacing
    3.
    发明授权
    Magnetic element with reduced shield-to-shield spacing 有权
    磁性元件具有减小的屏蔽间隔距离

    公开(公告)号:US09305578B1

    公开(公告)日:2016-04-05

    申请号:US13956912

    申请日:2013-08-01

    CPC classification number: G11B5/3163 G11B5/3912 G11B5/3932 G11B5/398

    Abstract: A magnetic stack is disclosed. The magnetic stack includes a magnetically responsive lamination that includes a ferromagnetic free layer, a synthetic antiferromagnetic (SAF) structure, and a spacer layer positioned between the ferromagnetic free layer and the SAF structure. The magnetically responsive lamination is separated from a sensed data bit stored in an adjacent medium by an air bearing surface (ABS). The stack also includes a first antiferromagnetic (AFM) structure coupled to the SAF structure a predetermined offset distance from the ABS, and a second AFM structure that is separated from the first AFM structure by a first shield layer.

    Abstract translation: 公开了磁性堆叠。 磁性堆叠包括磁响应层压,其包括铁磁自由层,合成反铁磁(SAF)结构和位于铁磁性自由层和SAF结构之间的间隔层。 磁响应层压件通过空气轴承表面(ABS)与存储在相邻介质中的感测数据位分离。 堆叠还包括耦合到SAF结构与ABS的预定偏移距离的第一反铁磁(AFM)结构,以及通过第一屏蔽层与第一AFM结构分离的第二AFM结构。

    Planarization strategy in nano-sized fabrication

    公开(公告)号:US12254906B1

    公开(公告)日:2025-03-18

    申请号:US17808680

    申请日:2022-06-24

    Abstract: A method of planarizing a device having a surface topography with at least one material at a surface of the device is described. The method comprises the steps of depositing a stop layer over at least a portion of the at least one material which substantially retains the surface topography of the device. A sacrificial layer is deposited over at least a portion of the stop layer. A planarization process is performed on the device. The planarization process includes the steps of performing a chemical mechanical polish (CMP) on the top surface of the sacrificial layer. A physical removal step is conducted on the remainder portion of the sacrificial layer to form a planarized surface. A second CMP step and a second physical removal step are conducted, to form a planarized device.

    MAGNETORESISTIVE SENSOR FABRICATION
    5.
    发明申请

    公开(公告)号:US20170294199A1

    公开(公告)日:2017-10-12

    申请号:US15631372

    申请日:2017-06-23

    CPC classification number: G11B5/3912 G11B5/397 G11B5/3974 G11B5/398

    Abstract: Implementations described and claimed herein include a reader structure, comprising a first reader, including a sensor stack and a top shield structure, the top shield structure comprises a synthetic antiferromagnetic shield (SAF) structure, including a reference layer including at least a layer of NiFe and an impurity additive, an RKKY coupling layer RKKY coupling layer (e.g., Ru layer), and a pinned layer. In another implementation, the RL of the SAF shield structure of a first reader includes at least a layer of amorphous magnetic material. Yet, in another implementation, the SAF shield structure includes an insertion layer of amorphous magnetic material under the SAF shield RL, within the SAF shield RL or between the SAF shield RL and SAF shield Ru.

    Sensor stabilization in a multiple sensor magnetic reproducing device

    公开(公告)号:US09685177B2

    公开(公告)日:2017-06-20

    申请号:US14793988

    申请日:2015-07-08

    Abstract: A multi-sensor reader that includes a first sensor that has a sensing layer with a magnetization that changes according to an external magnetic field. The first sensor also includes first and second side biasing magnets having a magnetization substantially along a first direction. The first and second side biasing magnets align the magnetization of the sensing layer substantially along the first direction when the sensing layer is not substantially influenced by the external magnetic field. The multi-sensor reader further includes a second sensor that is stacked over the first sensor. The second sensor includes a reference layer that has a magnetization that is set substantially along a second direction. The first sensor further includes at least one sensor-stabilization feature that counteracts an influence of a magnetic field utilized to set the magnetization of the reference layer of the second sensor in the second direction on the magnetization of at least one of the first and second side biasing magnets in the first direction.

    Spin transport sensor
    7.
    发明授权
    Spin transport sensor 有权
    旋转运输传感器

    公开(公告)号:US09087535B2

    公开(公告)日:2015-07-21

    申请号:US14069015

    申请日:2013-10-31

    Abstract: The implementations disclosed herein provide for a spin transport sensor including a synthetic antiferromagnet (SAF) adjacent a shield element. The SAF extends to an air-bearing surface (ABS) and provides a current path from a current source to an ABS-region of a spin conductor layer. Spin current diffuses from the spin conductor layer to an adjacent free layer, which generates a measurable electrical voltage in a free layer of the spin transport sensor. The SAF serves as both a magnetic shield and a spin injector to the spin conductor layer.

    Abstract translation: 本文公开的实施方案提供了一种自旋传输传感器,其包括邻近屏蔽元件的合成反铁磁体(SAF)。 SAF延伸到空气轴承表面(ABS),并提供从电流源到自旋导体层的ABS区域的电流路径。 旋转电流从自旋导体层扩散到相邻的自由层,其在自旋传输传感器的自由层中产生可测量的电压。 SAF用作磁屏蔽和自旋注入器到纺丝导体层。

    Magnetoresistive sensor fabrication

    公开(公告)号:US10090008B2

    公开(公告)日:2018-10-02

    申请号:US15631372

    申请日:2017-06-23

    Abstract: Implementations described and claimed herein include a reader structure, comprising a first reader, including a sensor stack and a top shield structure, the top shield structure comprises a synthetic antiferromagnetic shield (SAF) structure, including a reference layer including at least a layer of NiFe and an impurity additive, an RKKY coupling layer RKKY coupling layer (e.g., Ru layer), and a pinned layer. In another implementation, the RL of the SAF shield structure of a first reader includes at least a layer of amorphous magnetic material. Yet, in another implementation, the SAF shield structure includes an insertion layer of amorphous magnetic material under the SAF shield RL, within the SAF shield RL or between the SAF shield RL and SAF shield Ru.

    Multiple sensor magnetic reproducing device with reduced inter-sensor spacing
    10.
    发明授权
    Multiple sensor magnetic reproducing device with reduced inter-sensor spacing 有权
    具有减小传感器间距的多传感器磁再现装置

    公开(公告)号:US09536549B1

    公开(公告)日:2017-01-03

    申请号:US14826798

    申请日:2015-08-14

    CPC classification number: G11B5/3912 G11B5/3948 G11B5/397

    Abstract: A multi-sensor reader that includes a first sensor that has a sensor stack, which includes a free layer (FL) that has a magnetization that changes according to an external magnetic field. The first sensor also includes a shielding structure that is positioned over the sensor stack. The multi-sensor reader also includes a second sensor stacked over the first sensor. The second sensor includes a sensor stack, which includes a FL that has a magnetization that changes according to the external magnetic field. The multi-sensor reader further includes an isolation layer between the first sensor and the second sensor. A FL-to-FL spacing reduction feature is included in at least one of the isolation layer or the shielding structure.

    Abstract translation: 一种多传感器读取器,其包括具有传感器堆叠的第一传感器,该传感器堆叠包括具有根据外部磁场而变化的磁化的自由层(FL)。 第一传感器还包括位于传感器堆叠上方的屏蔽结构。 多传感器读取器还包括堆叠在第一传感器上的第二传感器。 第二传感器包括传感器堆,其包括具有根据外部磁场而变化的磁化的FL。 多传感器读取器还包括在第一传感器和第二传感器之间的隔离层。 在隔离层或屏蔽结构中的至少一个中包括FL-to-FL间隔缩小特征。

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