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公开(公告)号：US20240038898A1
公开(公告)日：2024-02-01
申请号：US18257331
申请日：2021-12-01
发明人： Masami JINTYOU , Takahiro IGUCHI , Rai SATO
IPC分类号： H01L29/786 , H01L33/62 , H01L29/423 , H01L25/075 , H01L25/16
CPC分类号： H01L29/7869 , H01L33/62 , H01L29/42384 , H01L25/0753 , H01L25/167
摘要： A semiconductor device with favorable electrical characteristics is provided. A highly reliable semiconductor device is provided. A semiconductor device with stable electrical characteristics is provided. The semiconductor device includes a semiconductor layer, a gate insulating layer, agate electrode, a first insulating layer, a second insulating layer, and a conductive layer. The gate insulating layer is in contact with a top surface and a side surface of the semiconductor layer, and the gate electrode includes a region overlapping with the semiconductor layer with the gate insulating layer therebetween. The first insulating layer contains an inorganic material and is in contact with a top surface of the gate insulating layer and a top surface and a side surface of the gate electrode. The gate insulating layer and the first insulating layer include a first opening in a region overlapping with the semiconductor layer. The second insulating layer contains an organic material and includes a second opening inside the first opening. The second insulating layer is in contact with a top surface and a side surface of the first insulating layer and a side surface of the gate insulating layer. The conductive layer is electrically connected to the semiconductor layer through the second opening.
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公开(公告)号：US20240038777A1
公开(公告)日：2024-02-01
申请号：US18224383
申请日：2023-07-20
发明人： Masakatsu OHNO , Masataka NAKADA , Yukinori SHIMA , Masayoshi DOBASHI , Junichi KOEZUKA , Masami JINTYOU
IPC分类号： H01L27/12
CPC分类号： H01L27/124 , H01L27/1259 , H01L2933/0066 , H01L33/62
摘要： To provide a semiconductor device that occupies a small area. The semiconductor device includes a first conductive layer, first to fifth insulating layers, and a second conductive layer that are stacked in this order and further includes a semiconductor layer, a third conductive layer, and a sixth insulating layer. The semiconductor layer is in contact with the top surface of the first conductive layer, the side surfaces of the first to fifth insulating layers, and the second conductive layer. The sixth insulating layer is over the semiconductor layer. The third conductive layer is over the sixth insulating layer and overlaps with the semiconductor layer with the sixth insulating layer between the third conductive layer and the semiconductor layer. The first insulating layer includes a region having a higher hydrogen content than the second insulating layer. The fifth insulating layer includes a region having a higher hydrogen content than the fourth insulating layer. The third insulating layer contains oxygen.
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公开(公告)号：US20220128850A1
公开(公告)日：2022-04-28
申请号：US17562384
申请日：2021-12-27
IPC分类号： G02F1/1368 , H01L27/12 , H01L33/62 , H01L29/786
摘要： A highly reliable semiconductor device is provided. A second insulating layer is positioned over a first insulating layer. A semiconductor layer is positioned between the first insulating layer and the second insulating layer. A third insulating layer is positioned over the second insulating layer. A fourth insulating layer is positioned over the third insulating layer. A first conductive layer includes a region overlapping with the semiconductor layer, and is positioned between the third insulating layer and the fourth insulating layer. The third insulating layer includes a region in contact with a bottom surface of the first conductive layer and a region in contact with the fourth insulating layer. The fourth insulating layer is in contact with a top surface and a side surface of the first conductive layer. A fifth insulating layer is in contact with a top surface and a side surface of the semiconductor layer. The fifth insulating layer includes a first opening and a second opening in a region overlapping with the semiconductor layer and not overlapping with the first conductive layer. A second conductive layer and a third conductive layer are electrically connected to the semiconductor layer in the first opening and the second opening, respectively. The third to fifth insulating layers include metal, and oxygen or nitrogen. A sixth insulating layer includes a region in contact with a top surface and a side surface of the fifth insulating layer and a region in contact with the first insulating layer.
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公开(公告)号：US20210399140A1
公开(公告)日：2021-12-23
申请号：US17279153
申请日：2019-09-27
发明人： Rai SATO , Masami JINTYOU , Masayoshi DOBASHI , Takashi SHIRAISHI , Satoru SAITO , Yasutaka NAKAZAWA
IPC分类号： H01L29/786 , H01L29/423 , H01L29/66
摘要： A semiconductor device with favorable electrical characteristics is provided. A highly reliable semiconductor device is provided. The semiconductor device includes a semiconductor layer, a first insulating layer, a second insulating layer, a metal oxide layer, and a conductive layer; the first insulating layer, the metal oxide layer, and the conductive layer are stacked in this order over the semiconductor layer; an end portion of the first insulating layer is located inward from an end portion of the semiconductor layer; an end portion of the metal oxide layer is located inward from the end portion of the first insulating layer; and an end portion of the conductive layer is located inward from the end portion of the metal oxide layer. The second insulating layer is preferably provided to cover the semiconductor layer, the first insulating layer, the metal oxide layer, and the conductive layer. It is preferable that the semiconductor layer include a first region, a pair of second regions, and a pair of third regions; the first region overlap with the first insulating layer and the metal oxide layer; the second regions between which the first region is sandwiched overlap with the first insulating layer and not overlap with the metal oxide layer; the third regions between which the first region and the pair of second regions are sandwiched not overlap with the first insulating layer; and the third regions be in contact with the second insulating layer.
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公开(公告)号：US20210343870A1
公开(公告)日：2021-11-04
申请号：US17377674
申请日：2021-07-16
IPC分类号： H01L29/786 , H01L29/66 , H01L29/417 , H01L29/423 , H01L21/02 , H01L21/425 , H01L29/49 , H01L27/12
摘要： A change in electrical characteristics in a semiconductor device including an oxide semiconductor film is inhibited, and the reliability is improved. The semiconductor device includes a gate electrode, a first insulating film over the gate electrode, an oxide semiconductor film over the first insulating film, a source electrode electrically connected to the oxide semiconductor film, a drain electrode electrically connected to the oxide semiconductor film, a second insulating film over the oxide semiconductor film, the source electrode, and the drain electrode, a first metal oxide film over the second insulating film, and a second metal oxide film over the first metal oxide film. The first metal oxide film contains at least one metal element that is the same as a metal element contained in the oxide semiconductor film. The second metal oxide film includes a region where the second metal oxide film and the first metal oxide film are mixed.
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公开(公告)号：US20210184049A1
公开(公告)日：2021-06-17
申请号：US17182367
申请日：2021-02-23
IPC分类号： H01L29/786 , H01L27/12
摘要： The stability of steps of processing a wiring formed using copper or the like is increased. The concentration of impurities in a semiconductor film is reduced. Electrical characteristics of a semiconductor device are improved. A semiconductor device includes a semiconductor film, a pair of first protective films in contact with the semiconductor film, a pair of conductive films containing copper or the like in contact with the pair of first protective films, a pair of second protective films in contact with the pair of conductive films on the side opposite the pair of first protective films, a gate insulating film in contact with the semiconductor film, and a gate electrode overlapping with the semiconductor film with the gate insulating film therebetween. In a cross section, side surfaces of the pair of second protective films are located on the outer side of side surfaces of the pair of conductive films.
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公开(公告)号：US20210126115A1
公开(公告)日：2021-04-29
申请号：US17254426
申请日：2019-06-19
IPC分类号： H01L29/66 , H01L21/383 , H01L21/4757 , H01L29/786
摘要： A semiconductor device with favorable electrical characteristics is provided. A semiconductor device with stable electrical characteristics is provided. A highly reliable semiconductor device is provided. A semiconductor layer is formed, a gate insulating layer is formed over the semiconductor layer, a metal oxide layer is formed over the gate insulating layer, and a gate electrode which overlaps with part of the semiconductor layer is formed over the metal oxide layer. Then, a first element is supplied through the metal oxide layer and the gate insulating layer to a region of the semiconductor layer that does not overlap with the gate electrode. Examples of the first element include phosphorus, boron, magnesium, aluminum, and silicon. The metal oxide layer may be processed after the first element is supplied to the semiconductor layer.
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公开(公告)号：US20210020665A1
公开(公告)日：2021-01-21
申请号：US17043232
申请日：2019-04-08
IPC分类号： H01L27/12
摘要： A semiconductor device having favorable and stable electrical characteristics is provided. The semiconductor device includes a first and a second transistor over an insulating surface. The first and the second transistors each include a first insulating layer, a semiconductor layer over the first insulating layer, a second insulating layer over the semiconductor layer, and a first conductive layer overlapping with the semiconductor layer with the second insulating layer interposed therebetween. The first insulating layer includes a convex first region that overlaps with the semiconductor layer and a second region that does not and is thinner than the first region. The first conductive layer includes a part over the second region where a lower surface of the first conductive layer is positioned below a lower surface of the semiconductor layer. The second transistor further includes a third conductive layer overlapping with the semiconductor layer with the first insulating layer interposed therebetween.
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公开(公告)号：US20200328282A1
公开(公告)日：2020-10-15
申请号：US16758091
申请日：2018-10-23
IPC分类号： H01L29/423 , H01L29/51 , G02F1/1368 , H01L27/12
摘要： A semiconductor device with favorable electrical characteristics is provided. A semiconductor device with stable electrical characteristics is provided. The semiconductor device includes a first insulating layer, a second insulating layer, a third insulating layer, a fourth insulating layer, a semiconductor layer, and a first conductive layer. The second insulating layer is positioned over the first insulating layer and the island-shaped semiconductor layer is positioned over the second insulating layer. The second insulating layer has an island shape having an end portion outside a region overlapping with the semiconductor layer. The fourth insulating layer covers the second insulating layer, the semiconductor layer, the third insulating layer, and the first conductive layer, is in contact with part of a top surface of the semiconductor layer, and is in contact with the first insulating layer outside the end portion of the second insulating layer. The semiconductor layer contains a metal oxide, the second insulating layer and the third insulating layer contain an oxide, the first insulating layer contains a metal oxide or a nitride, and the fourth insulating layer contains a metal nitride.
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公开(公告)号：US20200321454A1
公开(公告)日：2020-10-08
申请号：US16904836
申请日：2020-06-18
IPC分类号： H01L29/66 , H01L29/786 , H01L21/4757 , H01L21/4763 , H01L21/385 , H01L21/02
摘要： To provide a semiconductor device with favorable electrical characteristics. To provide a method for manufacturing a semiconductor device with high productivity. To reduce the temperatures in a manufacturing process of a semiconductor device. An island-like oxide semiconductor layer is formed over a first insulating film; a second insulating film and a first conductive film are formed in this order, covering the oxide semiconductor layer; oxygen is supplied to the second insulating film through the first conductive film; a metal oxide film is formed over the second insulating film in an atmosphere containing oxygen; a first gate electrode is formed by processing the metal oxide film; a third insulating film is formed, covering the first gate electrode and the second insulating film; and first heat treatment is performed. The second insulating film and the third insulating film each include oxide. The highest temperature in the above steps is 340° C. or lower.
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