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    PEELING METHOD AND MANUFACTURING METHOD OF FLEXIBLE DEVICE
    1.
    发明申请
    PEELING METHOD AND MANUFACTURING METHOD OF FLEXIBLE DEVICE 有权

    公开(公告)号：US20210020668A1

    公开(公告)日：2021-01-21

    申请号：US16983394

    申请日：2020-08-03

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Shunpei YAMAZAKI ,  Masataka SATO ,  Masakatsu OHNO ,  Seiji YASUMOTO ,  Hiroki ADACHI

    IPC: H01L27/12 ,  B23K26/351 ,  H01L51/00 ,  H01L51/56

    Abstract: A peeling method at low cost with high mass productivity is provided. A silicon layer having a function of releasing hydrogen by irradiation with light is formed over a formation substrate, a first layer is formed using a photosensitive material over the silicon layer, an opening is formed in a portion of the first layer that overlaps with the silicon layer by a photolithography method and the first layer is heated to form a resin layer having an opening, a transistor including an oxide semiconductor in a channel formation region is formed over the resin layer, a conductive layer is formed to overlap with the opening of the resin layer and the silicon layer, the silicon layer is irradiated with light using a laser, and the transistor and the formation substrate are separated from each other.

    PEELING METHOD AND MANUFACTURING METHOD OF FLEXIBLE DEVICE
    2.
    发明申请
    PEELING METHOD AND MANUFACTURING METHOD OF FLEXIBLE DEVICE 审中-公开

    公开(公告)号：US20190333942A1

    公开(公告)日：2019-10-31

    申请号：US16087811

    申请日：2017-04-03

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Shunpei YAMAZAKI ,  Masataka SATO ,  Masakatsu OHNO ,  Seiji YASUMOTO ,  Hiroki ADACHI

    IPC: H01L27/12 ,  H01L51/00 ,  H01L51/56 ,  B23K26/351

    Abstract: A peeling method at low cost with high mass productivity is provided. A silicon layer having a function of releasing hydrogen by irradiation with light is formed over a formation substrate, a first layer is formed using a photosensitive material over the silicon layer, an opening is formed in a portion of the first layer that overlaps with the silicon layer by a photolithography method and the first layer is heated to form a resin layer having an opening, a transistor including an oxide semiconductor in a channel formation region is formed over the resin layer, a conductive layer is formed to overlap with the opening of the resin layer and the silicon layer, the silicon layer is irradiated with light using a laser, and the transistor and the formation substrate are separated from each other.

    PEELING APPARATUS
    5.
    发明申请
    PEELING APPARATUS 有权
    皮肤装置

    公开(公告)号：US20150367622A1

    公开(公告)日：2015-12-24

    申请号：US14740957

    申请日：2015-06-16

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Hiroki ADACHI ,  Saki EGUCHI ,  Masakatsu OHNO ,  Junpei YANAKA ,  Yoshiharu HIRAKATA

    IPC: B32B43/00 ,  H01L21/67

    CPC classification number: B32B43/006 ,  B32B37/003 ,  B32B37/025 ,  B32B37/12 ,  B32B37/187 ,  B32B37/22 ,  B32B38/10 ,  B32B38/18 ,  B32B39/00 ,  B32B2457/00 ,  B32B2457/20 ,  B32B2457/208 ,  H01L21/67132 ,  H01L21/6835 ,  H01L2221/68318 ,  H01L2221/6835 ,  H01L2221/68363 ,  H01L2221/68386 ,  Y10T156/195

    Abstract: A peeling apparatus including a support body supply unit, a support body hold unit, a transfer mechanism, and a first structure body. The first structure body has a convex surface. The support body supply unit has a function of unwinding a first support body and includes one of a pair of tension applying mechanisms. The support body hold unit includes the other of the pair of tension applying mechanisms. The pair of tension applying mechanisms applies tension to the first support body. The transfer mechanism has a function of transferring a process member. The first structure body has a function of bending back the first support body along the convex surface. The first structure body has a function of dividing the process member into a first member and a second member. An angle at which the first structure body bends back the first support body is an obtuse angle.

    Abstract translation: 一种剥离装置，包括支撑体供给单元，支撑体保持单元，转印机构和第一结构体。 第一结构体具有凸面。 支撑体供给单元具有展开第一支撑体的功能，并且包括一对张力施加机构中的一个。 支撑体保持单元包括一对张力施加机构中的另一个。 一对张力施加机构对第一支撑体施加张力。 传送机构具有传送处理部件的功能。 第一结构体具有沿凸起表面弯曲第一支撑体的功能。 第一结构体具有将处理构件分割成第一构件和第二构件的功能。 第一结构体弯曲回第一支撑体的角度是钝角。

    SUBSTRATE SEPARATION APPARATUS FOR STACKED BODY
    6.
    发明申请
    SUBSTRATE SEPARATION APPARATUS FOR STACKED BODY 有权
    用于堆叠体的基板分离装置

    公开(公告)号：US20150318200A1

    公开(公告)日：2015-11-05

    申请号：US14699576

    申请日：2015-04-29

    Applicant: Semiconductor Energy Laboratory Co., LTD.

    Inventor： Masakatsu OHNO ,  Satoru IDOJIRI ,  Kanpei KIKUCHI ,  Yoshiharu HIRAKATA ,  Kohei YOKOYAMA

    IPC: H01L21/683 ,  H01L21/463 ,  H01L21/67

    CPC classification number: H01L21/463 ,  B32B38/10 ,  B32B43/006 ,  H01L21/67092 ,  H01L21/6838 ,  Y10T156/1132 ,  Y10T156/1168 ,  Y10T156/1184 ,  Y10T156/1928 ,  Y10T156/1944 ,  Y10T156/1961 ,  Y10T156/1967 ,  Y10T156/1978

    Abstract: A wedge-shaped jig (6) is inserted into a gap between a first substrate (21) and a second substrate (22) at a corner (221) of the second substrate (22) and separation of the attached first substrate (21) and second substrate (22) starts to proceed; then, a second suction pad (53) of a second suction portion (51), which is the closest to the corner (221), moves upward. Then, first suction pads (43) of first suction portions (41a), (41b), and (41c) sequentially move upward such that one side of the second substrate (22) separates from the stacked body. Although the second substrate (22) warps as the separation of the second substrate (22) proceeds, each of the plurality of first suction pads (43) elastically deforms. Therefore, the first suction pads (43) can be prevented from being detached from the second substrate (22), and the substrate (22) can be securely separated from the stacked body.

    Abstract translation: 在第二基板（22）的角部（221）处将楔形夹具（6）插入到第一基板（21）和第二基板（22）之间的间隙中，并且分离附接的第一基板（21） 并且第二基板（22）开始进行; 那么最靠近拐角（221）的第二吸入部（51）的第二吸盘（53）向上移动。 然后，第一吸引部（41a），（41b）和（41c）的第一吸盘（43）依次向上移动，使得第二基板（22）的一侧与层叠体分离。 尽管第二衬底（22）随着第二衬底（22）的分离进行而变形，但是多个第一吸附垫（43）中的每一个弹性变形。 因此，可以防止第一吸盘（43）与第二基板（22）分离，并且基板（22）能够与层叠体牢固地分离。

    SEMICONDUCTOR DEVICE AND DISPLAY DEVICE
    9.
    发明申请
    SEMICONDUCTOR DEVICE AND DISPLAY DEVICE 审中-公开

    公开(公告)号：US20200161340A1

    公开(公告)日：2020-05-21

    申请号：US16635290

    申请日：2018-08-22

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Masami JINTYOU ,  Daisuke KUROSAKI ,  Masakatsu OHNO ,  Junichi KOEZUKA

    IPC: H01L27/12 ,  H01L33/62 ,  G02F1/1368

    Abstract: A highly reliable semiconductor device is provided. A second insulating layer is positioned over a first insulating layer. A semiconductor layer is positioned between the first insulating layer and the second insulating layer. A third insulating layer is positioned over the second insulating layer. A fourth insulating layer is positioned over the third insulating layer. A first conductive layer includes a region overlapping with the semiconductor layer, and is positioned between the third insulating layer and the fourth insulating layer. The third insulating layer includes a region in contact with a bottom surface of the first conductive layer and a region in contact with the fourth insulating layer. The fourth insulating layer is in contact with atop surface and a side surface of the first conductive layer. A fifth insulating layer is in contact with a top surface and a side surface of the semiconductor layer. The fifth insulating layer includes a first opening and a second opening in a region overlapping with the semiconductor layer and not overlapping with the first conductive layer. A second conductive layer and a third conductive layer are electrically connected to the semiconductor layer in the first opening and the second opening, respectively. The third to fifth insulating layers include metal, and oxygen or nitrogen. A sixth insulating layer includes a region in contact with a top surface and a side surface of the fifth insulating layer and a region in contact with the first insulating layer.

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