公开(公告)号：US10923350B2

公开(公告)日：2021-02-16

申请号：US15687915

申请日：2017-08-28

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Masataka Sato ,  Seiji Yasumoto ,  Kayo Kumakura ,  Satoru Idojiri

IPC: H01L21/02 ,  H01L21/67 ,  H01L21/78 ,  H01L27/12 ,  H01L29/66

Abstract: The yield of a manufacturing process of a semiconductor device is increased. The mass productivity of a semiconductor device is increased. A semiconductor device is manufactured by forming a first material layer over a substrate; forming a second material layer over the first material layer; and separating the first material layer and the second material layer from each other; and heating the first material layer and the second material layer that are stacked before the separation. The first material layer includes a gas containing hydrogen, oxygen, or hydrogen and oxygen (e.g., water) in a metal oxide, for example. The second material layer includes a resin. The first material layer and the second material layer are separated from each other by a break of a hydrogen bond. Specifically water is separated out at the interface or near the interface, and then adhesion is reduced due to the water present.

公开(公告)号：US10236408B2

公开(公告)日：2019-03-19

申请号：US15687855

申请日：2017-08-28

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Masataka Sato ,  Naoki Ikezawa ,  Junpei Yanaka ,  Satoru Idojiri

IPC: H01L31/18 ,  H01L21/683 ,  H01L51/00 ,  H01L21/02 ,  H01L27/12 ,  H01L29/66

Abstract: The yield of a manufacturing process of a semiconductor device is increased. The productivity of a semiconductor device is increased. A first material layer is formed over a substrate, a second material layer is formed over the first material layer, and the first material layer and the second material layer are separated from each other, so that a semiconductor device is manufactured. In addition, a stack including the first material layer and the second material layer is preferably heated before the separation. The first material layer includes one or more of hydrogen, oxygen, and water. The first material layer includes a metal oxide, for example. The second material layer includes a resin (e.g., polyimide or acrylic). The first material layer and the second material layer are separated from each other by cutting a hydrogen bond. The first material layer and the second material layer are separated from each other in such a manner that water separated out by heat treatment at an interface between the first material layer and the second material layer or in the vicinity of the interface is irradiated with light.

公开(公告)号：US10031392B2

公开(公告)日：2018-07-24

申请号：US15285096

申请日：2016-10-04

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Masataka Nakada ,  Masahiro Katayama ,  Seiji Yasumoto ,  Hiroki Adachi ,  Masataka Sato ,  Koji Kusunoki ,  Yoshiharu Hirakata

IPC: G02F1/1362 ,  G06F3/01 ,  G02F1/1335 ,  G06F3/041 ,  G02F1/1345 ,  G02F1/1333 ,  H01L27/12

Abstract: Provided is a novel display panel that is highly convenient or highly reliable, a novel input/output device that is highly convenient or highly reliable, or a method for manufacturing a novel display panel that is highly convenient or highly reliable. The present inventors conceived a structure including a first intermediate film, a first electrode including a region in contact with the first intermediate film, a pixel that includes a first display element including the first electrode and a pixel circuit electrically connected to the first display element, a signal line electrically connected to the pixel, and a terminal that includes a third conductive film electrically connected to the signal line and a second intermediate film including a region in contact with the third conductive film.

公开(公告)号：US11355382B2

公开(公告)日：2022-06-07

申请号：US16850185

申请日：2020-04-16

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Seiji Yasumoto ,  Masataka Sato ,  Shingo Eguchi ,  Kunihiko Suzuki

IPC: H01L21/683 ,  H01L21/67 ,  H01L51/00 ,  H01L29/786 ,  B32B38/10 ,  H01L51/50

Abstract: To improve peelability, yield in a peeling step, and yield in manufacturing a flexible device. A peeling method is employed which includes a first step of forming a peeling layer containing tungsten over a support substrate; a second step of forming, over the peeling layer, a layer to be peeled formed of a stack including a first layer containing silicon oxynitride and a second layer containing silicon nitride in this order and forming an oxide layer containing tungsten oxide between the peeling layer and the layer to be peeled; a third step of forming a compound containing tungsten and nitrogen in the oxide layer by heat treatment; and a fourth step of peeling the peeling layer from the layer to be peeled at the oxide layer.

公开(公告)号：US11232944B2

公开(公告)日：2022-01-25

申请号：US16769433

申请日：2018-12-03

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Masataka Sato ,  Kayo Kumakura ,  Seiji Yasumoto ,  Satoru Idojiri

IPC: H01L21/02 ,  H01L27/32 ,  C03C17/36 ,  C03C17/38 ,  H01L29/786 ,  H01L51/56 ,  H01L27/12 ,  H01L51/00

Abstract: A method of fabricating a semiconductor device, which includes a separation step and has a high yield, is provided. A metal layer is formed over a substrate, fluorine is supplied to the metal layer, and the metal layer is then oxidized, whereby a metal compound layer is formed. A functional layer is formed over the metal compound layer, heat treatment is performed on the metal compound layer, and the functional layer is separated from the substrate with use of the metal compound layer. By performing first plasma treatment using a gas containing fluorine, fluorine can be supplied to the metal layer. By performing second plasma treatment using a gas containing oxygen, the metal layer supplied with fluorine can be oxidized.

公开(公告)号：US10096621B2

公开(公告)日：2018-10-09

申请号：US15596412

申请日：2017-05-16

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Junpei Yanaka ,  Kayo Kumakura ,  Masataka Sato ,  Satoru Idojiri ,  Kensuke Yoshizumi ,  Mari Tateishi ,  Natsuko Takase

IPC: H01L27/12 ,  H01L23/29 ,  H01L27/32

Abstract: To provide a peeling method that achieves low cost and high mass productivity. The peeling method includes the steps of: forming a first layer with a photosensitive material over a formation substrate; forming a first region and a second region having a smaller thickness than the first region in the first layer by photolithography to form a resin layer having the first region and the second region; forming a transistor including an oxide semiconductor in a channel formation region over the first region in the resin layer; forming a conductive layer over the second region in the resin layer; and irradiating the resin layer with laser light to separate the transistor and the formation substrate.

公开(公告)号：US20150123106A1

公开(公告)日：2015-05-07

申请号：US14532634

申请日：2014-11-04

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Seiji Yasumoto ,  Masataka Sato ,  Tomoya Aoyama ,  Ryu Komatsu

IPC: B32B43/00 ,  H01L51/00 ,  H01L51/52 ,  H01L21/311

CPC classification number: B32B43/006 ,  B32B38/10 ,  B32B2309/105 ,  B32B2315/08 ,  B32B2457/00 ,  H01L21/68757 ,  H01L27/3244 ,  H01L51/003 ,  H01L51/0097 ,  H01L51/5237 ,  H01L51/5262 ,  H01L2221/68386 ,  H01L2251/5338 ,  Y10T156/11 ,  Y10T156/1142 ,  Y10T156/1168 ,  Y10T156/1184 ,  Y10T156/1967 ,  Y10T156/1978

Abstract: The yield of a peeling process is improved. A first step of forming a peeling layer to a thickness of greater than or equal to 0.1 nm and less than 10 nm over a substrate; a second step of forming, on the peeling layer, a layer to be peeled including a first layer in contact with the peeling layer; a third step of separating parts of the peeling layer and parts of the first layer to form a peeling trigger; and a fourth step of separating the peeling layer and the layer to be peeled are performed. The use of the thin peeling layer can improve the yield of a peeling process regardless of the structure of the layer to be peeled.

Abstract translation: 剥离过程的产率提高。 在衬底上形成厚度大于或等于0.1nm且小于10nm的剥离层的第一步骤; 在剥离层上形成包含与剥离层接触的第一层的被剥离层的第二工序; 分离剥离层的部分和第一层的部分以形成剥离触发器的第三步骤; 并且进行剥离剥离层和被剥离层的第四工序。 无论剥离层的结构如何，使用薄的剥离层可以提高剥离过程的产量。

公开(公告)号：US12200998B2

公开(公告)日：2025-01-14

申请号：US18139004

申请日：2023-04-25

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Daiki Nakamura ,  Shingo Eguchi ,  Tomoya Aoyama ,  Nozomu Sugisawa ,  Junya Maruyama ,  Kazuhiko Fujita ,  Masataka Sato ,  Susumu Kawashima

IPC: H10K59/35 ,  G06F1/16 ,  H10K59/131 ,  H10K77/10 ,  H10K50/14 ,  H10K50/15 ,  H10K50/16 ,  H10K50/17 ,  H10K50/18 ,  H10K50/814 ,  H10K50/818 ,  H10K50/844 ,  H10K50/856

Abstract: Display unevenness in a display panel is suppressed. A display panel with a high aperture ratio of a pixel is provided. The display panel includes a first pixel electrode, a second pixel electrode, a third pixel electrode, a first light-emitting layer, a second light-emitting layer, a third light-emitting layer, a first common layer, a second common layer, a common electrode, and an auxiliary wiring. The first common layer is positioned over the first pixel electrode and the second pixel electrode. The first common layer has a portion overlapping with the first light-emitting layer and a portion overlapping with the second light-emitting layer. The second common layer is positioned over the third pixel electrode. The second common layer has a portion overlapping with the third light-emitting layer. The common electrode has a portion overlapping with the first pixel electrode with the first common layer and the first light-emitting layer provided therebetween, a portion overlapping with the second pixel electrode with the first common layer and the second light-emitting layer provided therebetween, a portion overlapping with the third pixel electrode with the second common layer and the third light-emitting layer provided therebetween, and a portion in contact with a top surface of the auxiliary wiring.

公开(公告)号：US11637009B2

公开(公告)日：2023-04-25

申请号：US16332546

申请日：2017-09-29

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Masataka Sato ,  Satoru Idojiri ,  Natsuko Takase

IPC: H01L21/02 ,  H01L21/304 ,  H01L21/306 ,  B23K26/38

Abstract: A glass substrate is reused. The mass productivity of a semiconductor device is increased.
A glass substrate one surface of which includes a first material and a second material. The first material includes one or both of a metal and a metal oxide. The second material includes one or both of a resin and a decomposition product of a resin. A cleaning method of a glass substrate, which includes a step of preparing the glass substrate one surface of which includes a first material and a second material and a step of exposing the first material by removing at least part of the second material.

公开(公告)号：US11209877B2

公开(公告)日：2021-12-28

申请号：US16980218

申请日：2019-03-04

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Masataka Sato ,  Hiroki Adachi

IPC: G06F1/18 ,  G06F3/01 ,  G06F3/041 ,  G09G3/3275 ,  H01L27/32

Abstract: A novel electrical module that is highly convenient or reliable is provided. A novel display panel that is highly convenient or reliable is provided. A novel display device that is highly convenient or reliable is provided. The functional layer includes an element, a conductive film, and an intermediate layer and the element is electrically connected to the conductive film. The intermediate layer includes an opening portion and a first surface, the opening portion overlaps with the conductive film, the opening portion includes a side end portion, and the side end portion is in contact with the conductive film. Moreover, the first surface includes a first region, the first region is positioned at the periphery of the opening portion, and the first region is in contact with the conductive film.