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    Separation method and manufacturing method of flexible device
    3.
    发明授权
    Separation method and manufacturing method of flexible device 有权

    公开(公告)号：US10205007B2

    公开(公告)日：2019-02-12

    申请号：US15486545

    申请日：2017-04-13

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Shunpei Yamazaki ,  Junpei Yanaka ,  Seiji Yasumoto ,  Masakatsu Ohno ,  Hiroki Adachi

    IPC: H01L21/00 ,  H01L29/66 ,  H01L21/02 ,  H01L21/311

    Abstract: A low-cost separation method with high mass productivity is provided. A first layer with a thickness of 0.1 μm or more and 3 μm or less can be formed by using a photosensitive and thermosetting material over the formation substrate, a resin layer comprising an opening is formed by forming an opening in the first layer by using a photolithography method, a silicon layer or an oxide layer is formed so as to overlap with the opening of the resin layer, a transistor including a metal oxide is formed over the resin layer, a conductive layer formed in the same manufacturing steps as the source or drain of the transistor is formed over the silicon layer or the oxide layer, the resin layer and one of the silicon layer and the oxide layer are irradiated with the laser light, and the transistor and the conductive layer are separated from the formation substrate.

    Method for manufacturing semiconductor device
    6.
    发明授权
    Method for manufacturing semiconductor device 有权

    公开(公告)号：US10236408B2

    公开(公告)日：2019-03-19

    申请号：US15687855

    申请日：2017-08-28

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Shunpei Yamazaki ,  Masataka Sato ,  Naoki Ikezawa ,  Junpei Yanaka ,  Satoru Idojiri

    IPC: H01L31/18 ,  H01L21/683 ,  H01L51/00 ,  H01L21/02 ,  H01L27/12 ,  H01L29/66

    Abstract: The yield of a manufacturing process of a semiconductor device is increased. The productivity of a semiconductor device is increased. A first material layer is formed over a substrate, a second material layer is formed over the first material layer, and the first material layer and the second material layer are separated from each other, so that a semiconductor device is manufactured. In addition, a stack including the first material layer and the second material layer is preferably heated before the separation. The first material layer includes one or more of hydrogen, oxygen, and water. The first material layer includes a metal oxide, for example. The second material layer includes a resin (e.g., polyimide or acrylic). The first material layer and the second material layer are separated from each other by cutting a hydrogen bond. The first material layer and the second material layer are separated from each other in such a manner that water separated out by heat treatment at an interface between the first material layer and the second material layer or in the vicinity of the interface is irradiated with light.

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