公开(公告)号：US20140152336A1

公开(公告)日：2014-06-05

申请号：US14091907

申请日：2013-11-27

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Toshinari Sasaki ,  Hiroshi Kanemura ,  Yasuharu Hosaka ,  Shuhei Yokoyama ,  Toshimitsu Obonai

IPC: G01R31/26 ,  H01L29/22

CPC classification number: H01L29/7869 ,  G01R31/2656 ,  G09G3/006 ,  G09G3/3225 ,  G09G3/3648 ,  H01L27/14678 ,  H01L27/14692 ,  H01L29/22

Abstract: A semiconductor layer with a low density of trap states is provided. A transistor with stable electrical characteristics is provided. A transistor having high field-effect mobility is provided. A semiconductor device including the transistor is provided. A method for evaluating a semiconductor layer is provided. A method for evaluating a transistor is provided. A method for evaluating a semiconductor device is provided. Provided is, for example, a semiconductor layer with a low defect density which can be used for a channel formation region of a transistor, a transistor including a semiconductor layer with a low defect density in a channel formation region, or a semiconductor device including the transistor.

Abstract translation: 提供了具有低密度陷阱状态的半导体层。 提供具有稳定电特性的晶体管。 提供具有高场效应迁移率的晶体管。 提供包括晶体管的半导体器件。 提供了一种用于评估半导体层的方法。 提供了一种用于评估晶体管的方法。 提供了一种用于评估半导体器件的方法。 例如，提供了可以用于晶体管的沟道形成区域的具有低缺陷密度的半导体层，在沟道形成区域中包括具有低缺陷密度的半导体层的晶体管，或包括晶体管的半导体器件 晶体管。

公开(公告)号：US09570626B2

公开(公告)日：2017-02-14

申请号：US15071700

申请日：2016-03-16

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Kenichi Okazaki ,  Toshinari Sasaki ,  Shuhei Yokoyama ,  Takashi Hamochi

IPC: H01L29/786 ,  H01L29/66 ,  H01L21/02 ,  H01L29/24 ,  H01L29/49

CPC classification number: H01L29/7869 ,  H01L21/02112 ,  H01L21/02274 ,  H01L21/385 ,  H01L23/3171 ,  H01L29/045 ,  H01L29/24 ,  H01L29/45 ,  H01L29/4908 ,  H01L29/4966 ,  H01L29/66742 ,  H01L29/66969 ,  H01L29/78606 ,  H01L29/78648 ,  H01L29/78696

Abstract: In a semiconductor device including a transistor including an oxide semiconductor film and a protective film over the transistor, an oxide insulating film containing oxygen in excess of the stoichiometric composition is formed as the protective film under the following conditions: a substrate placed in a treatment chamber evacuated to a vacuum level is held at a temperature higher than or equal to 180° C. and lower than or equal to 260° C.; a source gas is introduced into the treatment chamber so that the pressure in the treatment chamber is set to be higher than or equal to 100 Pa and lower than or equal to 250 Pa; and a high-frequency power higher than or equal to 0.17 W/cm2 and lower than or equal to 0.5 W/cm2 is supplied to an electrode provided in the treatment chamber.

Abstract translation: 在包括晶体管上的包括氧化物半导体膜和保护膜的晶体管的半导体器件中，在以下条件下形成含有超过化学计量组成的氧的氧化物绝缘膜作为保护膜：放置在处理室中的衬底 抽真空至真空度保持在高于或等于180℃且低于或等于260℃的温度; 将源气体引入处理室，使得处理室中的压力设定为高于或等于100Pa且小于或等于250Pa; 并且将高于或等于0.17W / cm 2且低于或等于0.5W / cm 2的高频功率供应到设置在处理室中的电极。

公开(公告)号：US11437523B2

公开(公告)日：2022-09-06

申请号：US16986387

申请日：2020-08-06

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Kenichi Okazaki ,  Toshinari Sasaki ,  Shuhei Yokoyama ,  Takashi Hamochi

IPC: H01L21/02 ,  H01L29/24 ,  H01L21/385 ,  H01L29/786 ,  H01L29/66 ,  H01L29/49 ,  H01L23/31 ,  H01L29/04 ,  H01L29/45

Abstract: In a semiconductor device including a transistor including an oxide semiconductor film and a protective film over the transistor, an oxide insulating film containing oxygen in excess of the stoichiometric composition is formed as the protective film under the following conditions: a substrate placed in a treatment chamber evacuated to a vacuum level is held at a temperature higher than or equal to 180° C. and lower than or equal to 260° C.; a source gas is introduced into the treatment chamber so that the pressure in the treatment chamber is set to be higher than or equal to 100 Pa and lower than or equal to 250 Pa; and a high-frequency power higher than or equal to 0.17 W/cm2 and lower than or equal to 0.5 W/cm2 is supplied to an electrode provided in the treatment chamber.

公开(公告)号：US10741694B2

公开(公告)日：2020-08-11

申请号：US16123406

申请日：2018-09-06

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Kenichi Okazaki ,  Toshinari Sasaki ,  Shuhei Yokoyama ,  Takashi Hamochi

IPC: H01L29/786 ,  H01L29/66 ,  H01L21/02 ,  H01L29/24 ,  H01L29/49 ,  H01L21/385 ,  H01L23/31 ,  H01L29/04 ,  H01L29/45

Abstract: In a semiconductor device including a transistor including an oxide semiconductor film and a protective film over the transistor, an oxide insulating film containing oxygen in excess of the stoichiometric composition is formed as the protective film under the following conditions: a substrate placed in a treatment chamber evacuated to a vacuum level is held at a temperature higher than or equal to 180° C. and lower than or equal to 260° C.; a source gas is introduced into the treatment chamber so that the pressure in the treatment chamber is set to be higher than or equal to 100 Pa and lower than or equal to 250 Pa; and a high-frequency power higher than or equal to 0.17 W/cm2 and lower than or equal to 0.5 W/cm2 is supplied to an electrode provided in the treatment chamber.

公开(公告)号：US20190019894A1

公开(公告)日：2019-01-17

申请号：US16123406

申请日：2018-09-06

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Kenichi Okazaki ,  Toshinari Sasaki ,  Shuhei Yokoyama ,  Takashi Hamochi

IPC: H01L29/786 ,  H01L21/02 ,  H01L29/45 ,  H01L23/31 ,  H01L29/04 ,  H01L21/385 ,  H01L29/49 ,  H01L29/24 ,  H01L29/66

Abstract: In a semiconductor device including a transistor including an oxide semiconductor film and a protective film over the transistor, an oxide insulating film containing oxygen in excess of the stoichiometric composition is formed as the protective film under the following conditions: a substrate placed in a treatment chamber evacuated to a vacuum level is held at a temperature higher than or equal to 180° C. and lower than or equal to 260° C.; a source gas is introduced into the treatment chamber so that the pressure in the treatment chamber is set to be higher than or equal to 100 Pa and lower than or equal to 250 Pa; and a high-frequency power higher than or equal to 0.17 W/cm2 and lower than or equal to 0.5 W/cm2 is supplied to an electrode provided in the treatment chamber.

公开(公告)号：US09318317B2

公开(公告)日：2016-04-19

申请号：US14543287

申请日：2014-11-17

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Kenichi Okazaki ,  Toshinari Sasaki ,  Shuhei Yokoyama ,  Takashi Hamochi

IPC: H01L29/786 ,  H01L21/02 ,  H01L29/66

CPC classification number: H01L29/7869 ,  H01L21/02112 ,  H01L21/02274 ,  H01L21/385 ,  H01L23/3171 ,  H01L29/045 ,  H01L29/24 ,  H01L29/45 ,  H01L29/4908 ,  H01L29/4966 ,  H01L29/66742 ,  H01L29/66969 ,  H01L29/78606 ,  H01L29/78648 ,  H01L29/78696

Abstract: In a semiconductor device including a transistor including an oxide semiconductor film and a protective film over the transistor, an oxide insulating film containing oxygen in excess of the stoichiometric composition is formed as the protective film under the following conditions: a substrate placed in a treatment chamber evacuated to a vacuum level is held at a temperature higher than or equal to 180° C. and lower than or equal to 260° C.; a source gas is introduced into the treatment chamber so that the pressure in the treatment chamber is set to be higher than or equal to 100 Pa and lower than or equal to 250 Pa; and a high-frequency power higher than or equal to 0.17 W/cm2 and lower than or equal to 0.5 W/cm2 is supplied to an electrode provided in the treatment chamber.

Abstract translation: 在包括晶体管上的包括氧化物半导体膜和保护膜的晶体管的半导体器件中，在以下条件下形成含有超过化学计量组成的氧的氧化物绝缘膜作为保护膜：放置在处理室中的衬底 抽真空至真空度保持在高于或等于180℃且低于或等于260℃的温度; 将源气体引入处理室，使得处理室中的压力设定为高于或等于100Pa且小于或等于250Pa; 并且将高于或等于0.17W / cm 2且低于或等于0.5W / cm 2的高频功率供应到设置在处理室中的电极。

公开(公告)号：US10096719B2

公开(公告)日：2018-10-09

申请号：US15401460

申请日：2017-01-09

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Kenichi Okazaki ,  Toshinari Sasaki ,  Shuhei Yokoyama ,  Takashi Hamochi

IPC: H01L29/786 ,  H01L29/66 ,  H01L21/02 ,  H01L29/24 ,  H01L29/49 ,  H01L21/385 ,  H01L23/31 ,  H01L29/04 ,  H01L29/45

Abstract: In a semiconductor device including a transistor including an oxide semiconductor film and a protective film over the transistor, an oxide insulating film containing oxygen in excess of the stoichiometric composition is formed as the protective film under the following conditions: a substrate placed in a treatment chamber evacuated to a vacuum level is held at a temperature higher than or equal to 180° C. and lower than or equal to 260° C.; a source gas is introduced into the treatment chamber so that the pressure in the treatment chamber is set to be higher than or equal to 100 Pa and lower than or equal to 250 Pa; and a high-frequency power higher than or equal to 0.17 W/cm2 and lower than or equal to 0.5 W/cm2 is supplied to an electrode provided in the treatment chamber.

公开(公告)号：US09153649B2

公开(公告)日：2015-10-06

申请号：US14091907

申请日：2013-11-27

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Toshinari Sasaki ,  Hiroshi Kanemura ,  Yasuharu Hosaka ,  Shuhei Yokoyama ,  Toshimitsu Obonai

IPC: G01R31/02 ,  H01L29/22 ,  H01L29/786 ,  H01L27/146 ,  G09G3/00 ,  G09G3/32 ,  G09G3/36 ,  G01R31/265

CPC classification number: H01L29/7869 ,  G01R31/2656 ,  G09G3/006 ,  G09G3/3225 ,  G09G3/3648 ,  H01L27/14678 ,  H01L27/14692 ,  H01L29/22

Abstract: A semiconductor layer with a low density of trap states is provided. A transistor with stable electrical characteristics is provided. A transistor having high field-effect mobility is provided. A semiconductor device including the transistor is provided. A method for evaluating a semiconductor layer is provided. A method for evaluating a transistor is provided. A method for evaluating a semiconductor device is provided. Provided is, for example, a semiconductor layer with a low defect density which can be used for a channel formation region of a transistor, a transistor including a semiconductor layer with a low defect density in a channel formation region, or a semiconductor device including the transistor.

Abstract translation: 提供了具有低密度陷阱状态的半导体层。 提供具有稳定电特性的晶体管。 提供具有高场效应迁移率的晶体管。 提供包括晶体管的半导体器件。 提供了一种用于评估半导体层的方法。 提供了一种用于评估晶体管的方法。 提供了一种用于评估半导体器件的方法。 例如，提供了可以用于晶体管的沟道形成区域的具有低缺陷密度的半导体层，在沟道形成区域中包括具有低缺陷密度的半导体层的晶体管，或包括晶体管的半导体器件 晶体管。

公开(公告)号：US09070778B2

公开(公告)日：2015-06-30

申请号：US13713186

申请日：2012-12-13

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Toshinari Sasaki ,  Shuhei Yokoyama ,  Takashi Hamochi ,  Shunpei Yamazaki

IPC: H01L29/12 ,  H01L29/786 ,  H01L29/66

CPC classification number: H01L29/7869 ,  H01L29/66969

Abstract: A highly reliable semiconductor device that includes a transistor including an oxide semiconductor is provided. In a semiconductor device which includes a bottom-gate transistor including an oxide semiconductor film, the spin density of the oxide semiconductor film is lower than or equal to 1×1018 spins/cm3, preferably lower than or equal to 1×1017 spins/cm3, further preferably lower than or equal to 1×1016 spins/cm3. The conductivity of the oxide semiconductor film is lower than or equal to 1×103 S/cm, preferably lower than or equal to 1×102 S/cm, further preferably lower than or equal to 1×101 S/cm.

Abstract translation: 提供了包括具有氧化物半导体的晶体管的高度可靠的半导体器件。 在包括具有氧化物半导体膜的底栅晶体管的半导体器件中，氧化物半导体膜的自旋密度低于或等于1×1018自旋/ cm3，优选低于或等于1×1017自旋/ cm3 ，进一步优选小于或等于1×1016自旋/ cm3。 氧化物半导体膜的导电率小于或等于1×10 3 S / cm，优选为1×102S / cm以下，进一步优选为1×101S / cm以下。

公开(公告)号：US08901556B2

公开(公告)日：2014-12-02

申请号：US13795770

申请日：2013-03-12

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Kenichi Okazaki ,  Toshinari Sasaki ,  Shuhei Yokoyama ,  Takashi Hamochi

IPC: H01L29/786 ,  H01L21/34 ,  H01L29/66

CPC classification number: H01L29/7869 ,  H01L21/02112 ,  H01L21/02274 ,  H01L21/385 ,  H01L23/3171 ,  H01L29/045 ,  H01L29/24 ,  H01L29/45 ,  H01L29/4908 ,  H01L29/4966 ,  H01L29/66742 ,  H01L29/66969 ,  H01L29/78606 ,  H01L29/78648 ,  H01L29/78696

Abstract: In a semiconductor device including a transistor including an oxide semiconductor film and a protective film over the transistor, an oxide insulating film containing oxygen in excess of the stoichiometric composition is formed as the protective film under the following conditions: a substrate placed in a treatment chamber evacuated to a vacuum level is held at a temperature higher than or equal to 180° C. and lower than or equal to 260° C.; a source gas is introduced into the treatment chamber so that the pressure in the treatment chamber is set to be higher than or equal to 100 Pa and lower than or equal to 250 Pa; and a high-frequency power higher than or equal to 0.17 W/cm2 and lower than or equal to 0.5 W/cm2 is supplied to an electrode provided in the treatment chamber.

Abstract translation: 在包括晶体管上的包括氧化物半导体膜和保护膜的晶体管的半导体器件中，在以下条件下形成含有超过化学计量组成的氧的氧化物绝缘膜作为保护膜：放置在处理室中的衬底 抽真空至真空度保持在高于或等于180℃且低于或等于260℃的温度; 将源气体引入处理室，使得处理室中的压力设定为高于或等于100Pa且小于或等于250Pa; 并且将高于或等于0.17W / cm 2且低于或等于0.5W / cm 2的高频功率供应到设置在处理室中的电极。