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1.发明申请公开(公告)号：US20150014605A1
公开(公告)日：2015-01-15
申请号：US14318727
申请日：2014-06-30
Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Inventor： Takahiro KAWAKAMI , Shuhei YOSHITOMI , Teruaki OCHIAI , Yumiko SAITO , Yohei MOMMA , Satoshi SEO , Mayumi MIKAMI , Shunsuke ADACHI
CPC classification number: H01M4/505 , H01B1/08 , H01M4/362 , H01M4/525 , H01M10/052 , H01M10/0525 , H01M2004/028 , H01M2220/20 , H01M2220/30 , Y02E60/122
Abstract: The amount of lithium ions that can be received and released in and from a positive electrode active material is increased, and high capacity and high energy density of a secondary battery are achieved. Provided is a lithium-manganese composite oxide represented by LixMnyMzOw, where M is a metal element other than Li and Mn, or Si or P, and y, z, and w satisfy 0≦x/(y+z) 0, z>0, 0.26≦(y+z)/w
Abstract translation: 能够在正极活性物质中吸收和释放的锂离子的量增加，二次电池的高容量和高能量密度得以实现。 提供了由LixMnyMzOw表示的锂锰复合氧化物，其中M是除Li和Mn以外的金属元素，或Si或P，y，z和w满足0＆lt; nlE; x /（y + z）<2，y > 0，z> 0,0.26和nlE;（y + z）/ w <0.5和0.2
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公开(公告)号：US20170162718A1
公开(公告)日：2017-06-08
申请号：US15439997
申请日：2017-02-23
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Shunpei YAMAZAKI , Yasutaka NAKAZAWA , Masami JINTYOU , Junichi KOEZUKA , Kenichi OKAZAKI , Takuya HIROHASHI , Shunsuke ADACHI
IPC: H01L29/786 , H01L27/12 , H01L29/66
CPC classification number: H01L29/78696 , H01L21/32051 , H01L21/3213 , H01L21/473 , H01L21/4757 , H01L27/1225 , H01L27/3262 , H01L29/66969 , H01L29/78618 , H01L29/7869
Abstract: A semiconductor device including a transistor having a reduced number of oxygen vacancies in a channel formation region of an oxide semiconductor with stable electrical characteristics or high reliability is provided. A gate insulating film is formed over a gate electrode; an oxide semiconductor layer is formed over the gate insulating film; an oxide layer is formed over the oxide semiconductor layer by a sputtering method to form an stacked-layer oxide film including the oxide semiconductor layer and the oxide layer; the stacked-layer oxide film is processed into a predetermined shape; a conductive film containing Ti as a main component is formed over the stacked-layer oxide film; the conductive film is etched to form source and drain electrodes and a depression portion on a back channel side; and portions of the stacked-layer oxide film in contact with the source and drain electrodes are changed to an n-type by heat treatment.
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公开(公告)号：US20180175210A1
公开(公告)日：2018-06-21
申请号：US15896925
申请日：2018-02-14
Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Inventor： Akiharu MIYANAGA , Yasuharu HOSAKA , Toshimitsu OBONAI , Junichi KOEZUKA , Motoki NAKASHIMA , Masahiro TAKAHASHI , Shunsuke ADACHI , Takuya HIROHASHI
CPC classification number: H01L29/78606 , H01L27/1225 , H01L29/045 , H01L29/24 , H01L29/4908 , H01L29/66969 , H01L29/7869 , H01L29/78696
Abstract: In a semiconductor device using a transistor including an oxide semiconductor, a change in electrical characteristics is suppressed and reliability is improved. The semiconductor device includes a gate electrode over an insulating surface; an oxide semiconductor film overlapping with the gate electrode; a gate insulating film that is between the gate electrode and the oxide semiconductor film and in contact with the oxide semiconductor film; a protective film in contact with a surface of the oxide semiconductor film that is an opposite side of a surface in contact with the gate insulating film; and a pair of electrodes in contact with the oxide semiconductor film. The spin density of the gate insulating film or the protective film measured by electron spin resonance spectroscopy is lower than 1×1018 spins/cm3, preferably higher than or equal to 1×1017 spins/cm3 and lower than 1×1018 spins/cm3.
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公开(公告)号：US20160351721A1
公开(公告)日：2016-12-01
申请号：US15232896
申请日：2016-08-10
Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Inventor： Akiharu MIYANAGA , Yasuharu HOSAKA , Toshimitsu OBONAI , Junichi KOEZUKA , Motoki NAKASHIMA , Masahiro TAKAHASHI , Shunsuke ADACHI , Takuya HIROHASHI
IPC: H01L29/786 , H01L27/12 , H01L29/66 , H01L29/04 , H01L29/24
CPC classification number: H01L29/78606 , H01L27/1225 , H01L29/045 , H01L29/24 , H01L29/4908 , H01L29/66969 , H01L29/7869 , H01L29/78696
Abstract: In a semiconductor device using a transistor including an oxide semiconductor, a change in electrical characteristics is suppressed and reliability is improved. The semiconductor device includes a gate electrode over an insulating surface; an oxide semiconductor film overlapping with the gate electrode; a gate insulating film that is between the gate electrode and the oxide semiconductor film and in contact with the oxide semiconductor film; a protective film in contact with a surface of the oxide semiconductor film that is an opposite side of a surface in contact with the gate insulating film; and a pair of electrodes in contact with the oxide semiconductor film. The spin density of the gate insulating film or the protective film measured by electron spin resonance spectroscopy is lower than 1×1018 spins/cm3, preferably higher than or equal to 1×1017 spins/cm3 and lower than 1×1018 spins/cm3.
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Patent Agency Ranking
公开(公告)号：US20160164089A1
公开(公告)日：2016-06-09
申请号：US15040051
申请日：2016-02-10
Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Inventor： Takahiro KAWAKAMI , Shuhei YOSHITOMI , Teruaki OCHIAI , Yumiko SAITO , Yohei MOMMA , Satoshi SEO , Mayumi MIKAMI , Shunsuke ADACHI
IPC: H01M4/505 , H01M4/525 , H01M10/0525
CPC classification number: H01M4/505 , H01B1/08 , H01M4/362 , H01M4/525 , H01M10/052 , H01M10/0525 , H01M2004/028 , H01M2220/20 , H01M2220/30 , Y02E60/122
Abstract: The amount of lithium ions that can be received and released in and from a positive electrode active material is increased, and high capacity and high energy density of a secondary battery are achieved. Provided is a lithium-manganese composite oxide represented by LixMnyMzOw, where M is a metal element other than Li and Mn, or Si or P, and y, z, and w satisfy 0≦x/(y+z) 0, z>0, 0.26≦(y+z)/w
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公开(公告)号：US20160141397A1
公开(公告)日：2016-05-19
申请号：US15002826
申请日：2016-01-21
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Shunpei YAMAZAKI , Yasutaka NAKAZAWA , Masami JINTYOU , Junichi KOEZUKA , Kenichi OKAZAKI , Takuya HIROHASHI , Shunsuke ADACHI
IPC: H01L29/66 , H01L21/473 , H01L21/3205 , H01L21/4757 , H01L29/786 , H01L21/3213
CPC classification number: H01L29/78696 , H01L21/32051 , H01L21/3213 , H01L21/473 , H01L21/4757 , H01L27/1225 , H01L27/3262 , H01L29/66969 , H01L29/78618 , H01L29/7869
Abstract: A semiconductor device including a transistor having a reduced number of oxygen vacancies in a channel formation region of an oxide semiconductor with stable electrical characteristics or high reliability is provided. A gate insulating film is formed over a gate electrode; an oxide semiconductor layer is formed over the gate insulating film; an oxide layer is formed over the oxide semiconductor layer by a sputtering method to form an stacked-layer oxide film including the oxide semiconductor layer and the oxide layer; the stacked-layer oxide film is processed into a predetermined shape; a conductive film containing Ti as a main component is formed over the stacked-layer oxide film; the conductive film is etched to form source and drain electrodes and a depression portion on a back channel side; and portions of the stacked-layer oxide film in contact with the source and drain electrodes are changed to an n-type by heat treatment.
Abstract translation: 提供一种半导体器件，其包括具有稳定的电特性或高可靠性的氧化物半导体的沟道形成区中具有减少的氧空位数的晶体管。 在栅电极上形成栅极绝缘膜; 在栅绝缘膜上形成氧化物半导体层; 通过溅射法在氧化物半导体层上形成氧化物层，以形成包含氧化物半导体层和氧化物层的堆叠层氧化膜; 堆叠层氧化膜被加工成预定的形状; 在叠层氧化膜上形成含有Ti作为主要成分的导电膜; 蚀刻导电膜以形成源极和漏极以及背沟道侧的凹陷部; 并且与源极和漏极接触的堆叠层氧化膜的部分通过热处理而变为n型。
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公开(公告)号：US20150155556A1
公开(公告)日：2015-06-04
申请号：US14553674
申请日：2014-11-25
Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Inventor： Takahiro KAWAKAMI , Mayumi MIKAMI , Shunsuke ADACHI , Shuhei YOSHITOMI , Teruaki OCHIAI , Yumiko YONEDA (Former: SAITO) , Yohei MOMMA , Satoshi SEO
CPC classification number: H01M4/505 , C01G45/1228 , C01G53/50 , C01P2002/80 , C01P2002/85 , C01P2002/89 , C01P2004/04 , H01M4/366 , H01M4/525 , H01M4/5825
Abstract: To increase the amount of lithium ions that can be received in and released from a positive electrode active material to achieve high capacity and high energy density of a secondary battery. A lithium manganese oxide particle includes a first region and a second region. The valence number of manganese in the first region is lower than the valence number of manganese in the second region. The lithium manganese oxide has high structural stability and high capacity characteristics.
Abstract translation: 为了增加可以从正极活性物质接收和释放的锂离子的量，以实现二次电池的高容量和高能量密度。 锂锰氧化物颗粒包括第一区域和第二区域。 第一区域中的锰的价数低于第二区域中的锰的价数。 锂锰氧化物具有高结构稳定性和高容量特性。
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公开(公告)号：US20150053971A1
公开(公告)日：2015-02-26
申请号：US14456069
申请日：2014-08-11
Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Inventor： Akiharu MIYANAGA , Yasuharu HOSAKA , Toshimitsu OBONAI , Junichi KOEZUKA , Motoki NAKASHIMA , Masahiro TAKAHASHI , Shunsuke ADACHI , Takuya HIROHASHI
IPC: H01L29/786 , H01L29/417 , H01L29/24
CPC classification number: H01L29/78606 , H01L27/1225 , H01L29/045 , H01L29/24 , H01L29/4908 , H01L29/66969 , H01L29/7869 , H01L29/78696
Abstract: In a semiconductor device using a transistor including an oxide semiconductor, a change in electrical characteristics is suppressed and reliability is improved. The semiconductor device includes a gate electrode over an insulating surface; an oxide semiconductor film overlapping with the gate electrode; a gate insulating film that is between the gate electrode and the oxide semiconductor film and in contact with the oxide semiconductor film; a protective film in contact with a surface of the oxide semiconductor film that is an opposite side of a surface in contact with the gate insulating film; and a pair of electrodes in contact with the oxide semiconductor film. The spin density of the gate insulating film or the protective film measured by electron spin resonance spectroscopy is lower than 1×1018 spins/cm3, preferably higher than or equal to 1×1017 spins/cm3 and lower than 1×1018 spins/cm3.
Abstract translation: 在使用包括氧化物半导体的晶体管的半导体器件中，电特性的变化被抑制并提高了可靠性。 半导体器件包括绝缘表面上的栅电极; 与所述栅电极重叠的氧化物半导体膜; 栅极绝缘膜，位于栅电极和氧化物半导体膜之间并与氧化物半导体膜接触; 与氧化物半导体膜的与栅极绝缘膜接触的表面的相反侧的表面接触的保护膜; 以及与氧化物半导体膜接触的一对电极。 通过电子自旋共振光谱测定的栅极绝缘膜或保护膜的自旋密度低于1×1018自旋/ cm3，优选为1×1017以上/ cm3以上，低于1×1018自旋/ cm3。
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公开(公告)号：US20140151686A1
公开(公告)日：2014-06-05
申请号：US14090244
申请日：2013-11-26
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Shunpei YAMAZAKI , Yasutaka NAKAZAWA , Masami JINTYOU , Junichi KOEZUKA , Kenichi OKAZAKI , Takuya HIROHASHI , Shunsuke ADACHI
IPC: H01L29/786 , H01L29/66
CPC classification number: H01L29/78696 , H01L21/32051 , H01L21/3213 , H01L21/473 , H01L21/4757 , H01L27/1225 , H01L27/3262 , H01L29/66969 , H01L29/78618 , H01L29/7869
Abstract: A semiconductor device including a transistor having a reduced number of oxygen vacancies in a channel formation region of an oxide semiconductor with stable electrical characteristics or high reliability is provided. A gate insulating film is formed over a gate electrode; an oxide semiconductor layer is formed over the gate insulating film; an oxide layer is formed over the oxide semiconductor layer by a sputtering method to form an stacked-layer oxide film including the oxide semiconductor layer and the oxide layer; the stacked-layer oxide film is processed into a predetermined shape; a conductive film containing Ti as a main component is formed over the stacked-layer oxide film; the conductive film is etched to form source and drain electrodes and a depression portion on a back channel side; and portions of the stacked-layer oxide film in contact with the source and drain electrodes are changed to an n-type by heat treatment.
Abstract translation: 提供一种半导体器件，其包括具有稳定的电特性或高可靠性的氧化物半导体的沟道形成区中具有减少的氧空位数的晶体管。 在栅电极上形成栅极绝缘膜; 在栅绝缘膜上形成氧化物半导体层; 通过溅射法在氧化物半导体层上形成氧化物层，以形成包含氧化物半导体层和氧化物层的堆叠层氧化膜; 堆叠层氧化膜被加工成预定的形状; 在叠层氧化膜上形成含有Ti作为主要成分的导电膜; 蚀刻导电膜以形成源极和漏极以及背沟道侧的凹陷部; 并且与源极和漏极接触的堆叠层氧化膜的部分通过热处理而变为n型。
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