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公开(公告)号：US10032817B2
公开(公告)日：2018-07-24
申请号：US15026724
申请日：2014-09-16
Applicant: SHARP KABUSHIKI KAISHA
Inventor： Takahiro Takimoto , Kazuhiro Natsuaki , Masayo Uchida , Nobuyoshi Awaya , Kazuya Ishihara , Takashi Nakano , Mitsuru Nakura
IPC: H01L27/146 , G02B5/20 , G01J3/51 , H01L31/0232 , G01J3/02
Abstract: A photoelectric conversion device includes: a first optical filter that has a first pattern periodically having a plurality of structures and is formed of a conductive material film disposed on a first photoelectric conversion element with an insulating film therebetween; and a first optical filter that has a second pattern periodically having a plurality of structures and is formed of a conductive material film disposed on a second photoelectric conversion element with the insulating film therebetween. The interval between the first pattern and the second pattern that are adjacent to each other is longer than a period of the structures in the first pattern and a period of the structures in the second pattern.
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2.发明授权公开(公告)号：US09513415B2
公开(公告)日：2016-12-06
申请号：US14307626
申请日：2014-06-18
Applicant: Sharp Kabushiki Kaisha
Inventor： Takashi Nakano , Mitsuru Nakura , Kazuya Ishihara , Nobuyoshi Awaya , Kazuhiro Natsuaki , Takahiro Takimoto , Masayo Uchida
Abstract: An optical filter configured to transmit light of a predetermined wavelength includes a substrate; a first conductive thin film that is disposed on the substrate and has apertures extending through the first conductive thin film and arranged with a period of less than the predetermined wavelength; and a second conductive thin film at least a portion of which faces the apertures so as to be separated from the apertures.
Abstract translation: 配置为透射预定波长的光的滤光器包括：基板; 第一导电薄膜，其设置在所述基板上并且具有延伸穿过所述第一导电薄膜并且以小于所述预定波长的周期布置的孔; 以及第二导电薄膜，其至少一部分面向所述孔以便与所述孔分离。
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公开(公告)号：US09042156B2
公开(公告)日：2015-05-26
申请号：US13647573
申请日：2012-10-09
Applicant: SHARP KABUSHIKI KAISHA , ELPIDA MEMORY, INC.
Inventor： Mitsuru Nakura , Nobuyoshi Awaya , Kazuya Ishihara , Akiyoshi Seko
CPC classification number: G11C13/0028 , G11C13/0002 , G11C13/004 , G11C13/0069 , G11C2013/0073 , G11C2013/0078 , G11C2213/79
Abstract: A semiconductor memory device includes a writing circuit and a reading circuit. The writing circuit executes a setting action for converting a resistance of a variable resistance element to a low resistance by applying current from one end side to the other end side of a memory cell via the variable resistance element, and a resetting action for converting the resistance to a high resistance by applying current from the other end side to the one end side via the variable resistance element. The reading circuit executes a first reading action for reading a resistance state of the variable resistance element by applying current from one end side to the other end side of the memory cell via the variable resistance element, and a second reading action for reading the resistance state by applying current from the other end side to the one end side via the variable resistance element.
Abstract translation: 半导体存储器件包括写入电路和读取电路。 写入电路通过经由可变电阻元件施加从存储单元的一端到另一端侧的电流来执行用于将可变电阻元件的电阻转换为低电阻的设定动作，以及用于转换电阻的复位动作 通过经由可变电阻元件从另一端侧向一端侧施加电流而产生高电阻。 读取电路通过经由可变电阻元件施加电流从存储单元的一端到另一端进行电流来读出可变电阻元件的电阻状态的第一读取动作，以及读取电阻状态的第二读取动作 通过经由可变电阻元件从另一端侧向一端侧施加电流。
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公开(公告)号：US09876125B2
公开(公告)日：2018-01-23
申请号：US14913443
申请日：2014-07-11
Applicant: SHARP KABUSHIKI KAISHA
Inventor： Kazuhiro Natsuaki , Masayo Uchida , Takahiro Takimoto , Nobuyoshi Awaya , Kazuya Ishihara , Takashi Nakano , Mitsuru Nakura
IPC: H01L31/0232 , H01L27/146 , H01L21/00 , H01L31/0216
CPC classification number: H01L31/02162 , H01L27/1462 , H01L27/14623 , H01L27/14625 , H01L27/14629 , H01L27/14645 , H01L31/02164
Abstract: A photoelectric conversion device capable of preventing anomalous transmission of light of a wavelength that is not supposed to be transmitted and reducing the half-width of a spectral waveform and a method for manufacturing such a photoelectric conversion device are provided. A first photoelectric conversion element is formed on a substrate. A first metal film having a plurality of openings arranged periodically or aperiodically is formed above the first photoelectric conversion element with insulating films interposed therebetween. A second metal film covering a part of the openings in the first metal film is provided.
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