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    Image capturing apparatus
    3.
    发明授权
    Image capturing apparatus 有权

    公开(公告)号：US10481313B2

    公开(公告)日：2019-11-19

    申请号：US16095303

    申请日：2017-03-08

    Applicant: SHARP KABUSHIKI KAISHA

    Inventor： Daisuke Honda ,  Takashi Nakano ,  Suguru Kawabata ,  Takahiro Takimoto ,  Kazuhiro Natsuaki ,  Masayo Uchida ,  Masaaki Uchihashi

    IPC: G02B5/30 ,  H01L27/146

    Abstract: An image capturing apparatus that includes a polarizing filter of a slit type in which polarization characteristics are improved is realized. A polarizing unit (10) of an image capturing apparatus (100) includes a first polarizer layer (120a) and a second polarizer layer (120b) that hold a dielectric layer (14) therebetween, and a plurality of slits (13) that are arranged at regular intervals in a predetermined direction are formed in each of the first polarizer layer (120a) and the second polarizer layer (120b). A forming material of each of the first polarizer layer (120a) and the second polarizer layer (120b) and a forming material of a wiring layer that controls an operation of a light receiving unit (11) are selected from Al, Si, Cu, Au, Ag, Pt, W, Ti, Sn, In, Ga, Zn, and a compound or alloy that contains at least one of the foregoing.

    Avalanche photodiode
    5.
    发明授权
    Avalanche photodiode 有权

    公开(公告)号：US10707369B2

    公开(公告)日：2020-07-07

    申请号：US16345613

    申请日：2017-09-26

    Applicant: SHARP KABUSHIKI KAISHA

    Inventor： Kazuhiro Natsuaki ,  Takahiro Takimoto ,  Masayo Uchida

    IPC: H01L31/107 ,  H01L29/06 ,  H01L31/02 ,  H01L31/0203 ,  H01L31/0236

    Abstract: An avalanche photodiode according to the present invention includes, inside a substrate semiconductor layer having a first conductivity type and a uniform impurity concentration, a first semiconductor layer having the first conductivity type, a second semiconductor layer having a second conductivity type, a third semiconductor layer having the second conductivity type, a fourth semiconductor layer having the second conductivity type, a fifth semiconductor layer having the first conductivity type and formed at a position away from the third semiconductor layer in a lateral direction, a sixth semiconductor layer having the second conductivity type, a first contact, and a second contact. The first semiconductor layer is positioned just under the second semiconductor layer and the fifth semiconductor layer in contact therewith. An avalanche phenomenon is caused at a junction between the first semiconductor layer and the second semiconductor layer.

    Avalanche photodiode
    7.
    发明授权
    Avalanche photodiode 有权

    公开(公告)号：US11081612B2

    公开(公告)日：2021-08-03

    申请号：US15776065

    申请日：2016-06-23

    Applicant: SHARP KABUSHIKI KAISHA

    Inventor： Kazuhiro Natsuaki ,  Takahiro Takimoto ,  Masayo Uchida

    IPC: H01L31/107 ,  H01L31/028

    Abstract: An avalanche photodiode includes: a first semiconductor layer of a first conductivity type formed on a substrate of the first conductivity type; a second semiconductor layer of a second conductivity type formed under the first semiconductor layer; a third semiconductor layer of the first conductivity type formed in a shallow portion of the first semiconductor layer on the substrate, the third semiconductor layer having a higher concentration than an impurity concentration of the first semiconductor layer; a fourth semiconductor layer of the first conductivity type formed in a region in the first semiconductor layer immediately below the third semiconductor layer; a first contact electrically connected to the first semiconductor layer; and a second contact electrically connected to the second semiconductor layer. An impurity concentration of the fourth semiconductor layer is higher than that of the first semiconductor layer and is lower than that of the third semiconductor layer.

    Photosensor
    8.
    发明授权
    Photosensor 有权

    公开(公告)号：US10566489B2

    公开(公告)日：2020-02-18

    申请号：US16304284

    申请日：2017-05-26

    Applicant: SHARP KABUSHIKI KAISHA

    Inventor： Kazuhiro Natsuaki ,  Takahiro Takimoto ,  Masayo Uchida

    IPC: H01L27/14 ,  H01L31/00 ,  H01L31/153 ,  G02B5/28 ,  H01L31/107 ,  H01L31/0216 ,  H01L31/173 ,  H01L31/103 ,  G01S17/02 ,  H01L31/0203

    Abstract: A photosensor includes a light emitting element that radiates light onto an object to be detected and a light receiving element that has a light-receiving surface for receiving light radiated from the light emitting element. An incident light regulation portion covering the light-receiving surface is provided on a path along which the light radiated from the light emitting element directed toward the light-receiving surface, and the incident light regulation portion transmits light having an incident angle less than a predetermined value and blocks light having the incident angle greater than or equal to the predetermined value among light incident on the light receiving element.

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