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公开(公告)号：US08437376B2
公开(公告)日：2013-05-07
申请号：US13294682
申请日：2011-11-11
IPC分类号： H01S5/00
CPC分类号： H01S5/32341 , H01S5/0281 , H01S5/0283
摘要： A nitride semiconductor device includes a multilayer semiconductor structure made of a group III nitride semiconductor and having a light-emitting facet, and a first coating film formed to cover the light-emitting facet of the multilayer semiconductor structure. The first coating film is a crystalline film made of a nitride containing aluminum. The crystalline film is composed of a group of single domains, and the single domain is comprised of a group of grains whose crystal orientation planes have a same inclination angle and a same rotation angle. A length of a boundary between the domains per unit area is 7 μm−1 or less.
摘要翻译： 氮化物半导体器件包括由III族氮化物半导体制成并具有发光小面的多层半导体结构，以及形成为覆盖多层半导体结构的发光面的第一涂膜。 第一涂膜是由含有铝的氮化物制成的结晶膜。 结晶膜由一组单畴构成，单畴由一组晶体构成，晶粒取向面具有相同的倾斜角度和相同的旋转角度。 单位面积域之间的边界长度为7mum-1以下。
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公开(公告)号：US20120057612A1
公开(公告)日：2012-03-08
申请号：US13294682
申请日：2011-11-11
IPC分类号： H01S5/323
CPC分类号： H01S5/32341 , H01S5/0281 , H01S5/0283
摘要： A nitride semiconductor device includes a multilayer semiconductor structure made of a group III nitride semiconductor and having a light-emitting facet, and a first coating film formed to cover the light-emitting facet of the multilayer semiconductor structure. The first coating film is a crystalline film made of a nitride containing aluminum. The crystalline film is composed of a group of single domains, and the single domain is comprised of a group of grains whose crystal orientation planes have a same inclination angle and a same rotation angle. A length of a boundary between the domains per unit area is 7 μm−1 or less.
摘要翻译： 氮化物半导体器件包括由III族氮化物半导体制成并具有发光小面的多层半导体结构，以及形成为覆盖多层半导体结构的发光面的第一涂膜。 第一涂膜是由含有铝的氮化物制成的结晶膜。 结晶膜由一组单畴构成，单畴由一组晶体构成，晶粒取向面具有相同的倾斜角度和相同的旋转角度。 每单位面积域的边界长度为7μm-1以下。
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公开(公告)号：US08194711B2
公开(公告)日：2012-06-05
申请号：US12470919
申请日：2009-05-22
IPC分类号： H01S5/00
CPC分类号： H01S5/0281 , B82Y20/00 , H01S5/0282 , H01S5/0287 , H01S5/1039 , H01S5/22 , H01S5/34333
摘要： A nitride semiconductor laser device includes a multilayer structure including a plurality of nitride semiconductor layers including a light emitting layer, the multilayer structure having cavity facets facing each other, and a plurality of protective films made of a dielectric material provided on one of the cavity facets. The protective films include a first protective film, a second protective film and a third protective film. The first protective film contacts the cavity facet and is made of aluminum nitride. The second protective film is provided on a surface opposite to the cavity facet of the first protective film and is made of a material different from that of the first protective film. The third protective film is provided on a surface opposite to the first protective film of the second protective film and is made of the same material as that of the first protective film.
摘要翻译： 氮化物半导体激光器件包括多层结构，其包括多个氮化物半导体层，所述多个氮化物半导体层包括发光层，所述多层结构具有彼此面对的空腔面，以及多个由介电材料制成的保护膜，所述绝缘材料设置在所述腔面之一 。 保护膜包括第一保护膜，第二保护膜和第三保护膜。 第一保护膜接触腔面并由氮化铝制成。 第二保护膜设置在与第一保护膜的空腔面相对的表面上，并且由与第一保护膜不同的材料制成。 第三保护膜设置在与第二保护膜的第一保护膜相反的表面上，并且由与第一保护膜相同的材料制成。
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4.发明申请公开(公告)号：US20090236630A1
公开(公告)日：2009-09-24
申请号：US12401929
申请日：2009-03-11
CPC分类号： H01S5/0281 , H01S5/0282 , H01S5/0287 , H01S5/32341
摘要： A nitride semiconductor light emitting device includes a nitride semiconductor multilayer film. The nitride semiconductor multilayer film is formed on a substrate and made of nitride semiconductor crystals, and includes a light emitting layer. In the nitride semiconductor multilayer film, facets of a cavity are formed, and a protective film made of aluminum nitride crystals is formed on at least one of the facets. The protective film has a crystal plane whose crystal axes form an angle of 90 degrees with crystal axes of a crystal plane of the nitride semiconductor crystals constituting the facet of the cavity having the protective film formed thereon.
摘要翻译： 氮化物半导体发光器件包括氮化物半导体多层膜。 氮化物半导体多层膜形成在基板上，由氮化物半导体晶体制成，并且包括发光层。 在氮化物半导体多层膜中，形成空腔的小面，并且在至少一个面上形成由氮化铝晶体制成的保护膜。 保护膜具有与构成其上形成有保护膜的腔的面的氮化物半导体晶体的晶面的晶轴成90度角的晶面。
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5.发明授权公开(公告)号：US07759684B2
公开(公告)日：2010-07-20
申请号：US12401929
申请日：2009-03-11
IPC分类号： H01L27/15
CPC分类号： H01S5/0281 , H01S5/0282 , H01S5/0287 , H01S5/32341
摘要： A nitride semiconductor light emitting device includes a nitride semiconductor multilayer film. The nitride semiconductor multilayer film is formed on a substrate and made of nitride semiconductor crystals, and includes a light emitting layer. In the nitride semiconductor multilayer film, facets of a cavity are formed, and a protective film made of aluminum nitride crystals is formed on at least one of the facets. The protective film has a crystal plane whose crystal axes form an angle of 90 degrees with crystal axes of a crystal plane of the nitride semiconductor crystals constituting the facet of the cavity having the protective film formed thereon.
摘要翻译： 氮化物半导体发光器件包括氮化物半导体多层膜。 氮化物半导体多层膜形成在基板上，由氮化物半导体晶体制成，并且包括发光层。 在氮化物半导体多层膜中，形成空腔的小面，并且在至少一个面上形成由氮化铝晶体制成的保护膜。 保护膜具有与构成其上形成有保护膜的腔的面的氮化物半导体晶体的晶面的晶轴成90度角的晶面。
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公开(公告)号：US09209743B2
公开(公告)日：2015-12-08
申请号：US13594340
申请日：2012-08-24
申请人： Yoshiaki Hasegawa , Makoto Sato , Akihiro Suyama
发明人： Yoshiaki Hasegawa , Makoto Sato , Akihiro Suyama
CPC分类号： H02S50/10
摘要： According to one embodiment, an apparatus includes an first storage unit to store a value output by a communication unit, a second storage unit to store positional data indicating a place the modules, an third storage unit to store an output model indicating the relationship between a sunshine condition and an electrical output, a estimation unit to estimate a sunshine condition for each module based on the value and the output model, a forth storage unit to store the sunshine condition estimated, a correction unit to correct the sunshine condition, and a detection unit to calculate an expected electrical output for each module based on the corrected sunshine condition and the output model, and to detect a fault in the modules.
摘要翻译： 根据一个实施例，一种装置包括：第一存储单元，用于存储由通信单元输出的值;第二存储单元，用于存储指示模块位置的位置数据;第三存储单元，用于存储指示a的关系的输出模型 阳光条件和电输出;估计单元，用于基于所述值和所述输出模型估计每个模块的阳光条件;存储所估计的阳光条件的第四存储单元，用于校正阳光条件的校正单元和检测 单元，根据修正的阳光条件和输出模型计算每个模块的预期电气输出，并检测模块中的故障。
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公开(公告)号：US20130262190A1
公开(公告)日：2013-10-03
申请号：US13710656
申请日：2012-12-11
申请人： Makoto SATO , Mari Nagasaka , Yoshiaki Hasegawa
发明人： Makoto SATO , Mari Nagasaka , Yoshiaki Hasegawa
IPC分类号： G06Q10/06
CPC分类号： G06Q10/0637 , G05B23/0283 , G05B2219/31337 , G06Q10/063
摘要： Maintenance actions, maintenance costs each differently corresponding to each maintenance action, a reference strategy and a fault model, are stored. If a system is maintained by each maintenance action at a first timing, if the system is degraded by the fault model from the first timing to a predetermined timing, and if the system is maintained by the reference strategy from a second timing after passing a predetermined period from the first timing to the predetermined timing, at least one search timing is set into a search period from the first timing to the second timing. A maintenance action value of each maintenance action is calculated at the search timing, based on an output and the maintenance cost of the system maintained from the first timing to the predetermined timing. An optimum maintenance action is selected from the maintenance actions, based on the maintenance action value of each maintenance action.
摘要翻译： 存储维护动作，维护成本各不相同，每个维护动作，参考策略和故障模型。 如果在第一定时通过每个维护动作维持系统，如果系统由故障模型从第一定时降级到预定定时，并且如果系统在通过预定的时间之后的第二定时由参考策略维护 从第一定时到预定定时，至少一个搜索定时被设置到从第一定时到第二定时的搜索周期。 基于从第一定时到预定定时保持的系统的输出和维护成本，在搜索时刻计算每个维护动作的维护动作值。 根据维护动作的维护动作值，从维护动作中选择最佳维护动作。
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公开(公告)号：US08306085B2
公开(公告)日：2012-11-06
申请号：US13234326
申请日：2011-09-16
IPC分类号： H01S5/10
CPC分类号： H01S5/34333 , B82Y20/00 , H01L21/78 , H01L33/0095 , H01S5/0202 , H01S5/22 , H01S5/2201 , Y10S148/028
摘要： The present invention is directed to a production method for a nitride compound semiconductor element including a substrate and a multilayer structure 40 supported by an upper face of the substrate. First, a wafer 1 to be split into individual substrates is provided. A plurality of semiconductor layers composing the multilayer structure 40 are grown on the wafer 1. By cleaving the wafer 1 and the semiconductor layers, a cleavage plane in the multilayer structure 40 is formed. In the present invention, a plurality of voids are arranged at positions in the multilayer structure at which a cleavage plane is to be formed. Thus, cleavage can be performed with a good yield.
摘要翻译： 本发明涉及一种氮化物化合物半导体元件的制造方法，所述氮化物化合物半导体元件包括由所述基板的上表面支撑的基板和多层结构体40。 首先，设置分割成各个基板的晶片1。 构成多层结构40的多个半导体层在晶片1上生长。通过切割晶片1和半导体层，形成多层结构40中的解理面。 在本发明中，在形成有解理面的多层结构体的位置配置多个空隙。 因此，可以以良好的产率进行裂解。
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公开(公告)号：US20110215340A1
公开(公告)日：2011-09-08
申请号：US13109213
申请日：2011-05-17
IPC分类号： H01L33/02
CPC分类号： H01S5/34333 , B82Y20/00 , H01L33/32 , H01L33/38 , H01L33/40 , H01S5/0202 , H01S5/02272 , H01S5/028 , H01S5/0425 , H01S5/22 , H01S5/2201 , H01S5/3202 , H01S2304/04
摘要： A semiconductor light-emitting device according to the present invention includes: a GaN substrate 1 containing an n-type impurity and being made of silicon carbide or a nitride semiconductor; a multilayer structure 10 provided on a main surface of the GaN substrate 1; a p-electrode 17 formed on the multilayer structure 10; a first n-electrode 18 substantially covering the entire rear surface of the GaN substrate 1; and a second n-electrode 20 provided on the first n-electrode 18 so as to expose at least a portion of the periphery of the first n-electrode 18.
摘要翻译： 根据本发明的半导体发光器件包括：包含n型杂质并由碳化硅或氮化物半导体制成的GaN衬底1; 设置在GaN衬底1的主表面上的多层结构10; 形成在多层结构体10上的p电极17; 基本上覆盖GaN衬底1的整个后表面的第一n电极18; 以及设置在第一n电极18上以露出第一n电极18的周边的至少一部分的第二n电极20。
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10.发明授权Nitride semiconductor light emitting element and nitride semiconductor light emitting device 有权氮化物半导体发光元件和氮化物半导体发光器件公开(公告)号：US07880192B2
公开(公告)日：2011-02-01
申请号：US12159786
申请日：2006-12-27
IPC分类号： H01L21/06
CPC分类号： H01S5/34333 , B82Y20/00 , H01S5/0425 , H01S5/22
摘要： A nitride semiconductor device according to the present invention includes a n-GaN substrate 10 and a semiconductor multilayer structure arranged on the principal surface of the n-GaN substrate 10 and including a p-type region, an n-type region and an active layer between them. An SiO2 layer 30 with an opening and a p-side electrode, which makes contact with a portion of the p-type region of the semiconductor multilayer structure, are arranged on the upper surface of the semiconductor multilayer structure. An n-side electrode 36 is arranged on the back surface of the substrate 10. The p-side electrode includes a p-side contact electrode 32 that contacts with the portion of the p-type region and a p-side interconnect electrode 34 that covers the p-side contact electrode 2 and the SiO2 layer 30. Part of the p-side contact electrode 32 is exposed under the p-side interconnect electrode 34.
摘要翻译： 根据本发明的氮化物半导体器件包括n-GaN衬底10和布置在n-GaN衬底10的主表面上并包括p型区，n型区和有源层的半导体多层结构 它们之间。 具有与半导体多层结构的p型区域的一部分接触的开口部和p侧电极的SiO2层30配置在半导体多层结构体的上表面。 n侧电极36配置在基板10的背面.p侧电极包括与p型区域的部分接触的p侧接触电极32和p侧配线电极34 覆盖p侧接触电极2和SiO 2层30. p侧接触电极32的一部分露出在p侧互连电极34的下方。
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