公开(公告)号：US08030677B2

公开(公告)日：2011-10-04

申请号：US12375118

申请日：2007-07-13

申请人： Naomi Anzue ,  Gaku Sugahara ,  Yoshiaki Hasegawa ,  Akihiko Ishibashi ,  Toshiya Yokogawa

发明人： Naomi Anzue ,  Gaku Sugahara ,  Yoshiaki Hasegawa ,  Akihiko Ishibashi ,  Toshiya Yokogawa

IPC分类号： H01L33/00

CPC分类号： H01S5/34333 ,  B82Y20/00 ,  H01L33/32 ,  H01L33/38 ,  H01L33/40 ,  H01S5/0202 ,  H01S5/02272 ,  H01S5/028 ,  H01S5/0425 ,  H01S5/22 ,  H01S5/2201 ,  H01S5/3202 ,  H01S2304/04

摘要： A semiconductor light-emitting device according to the present invention includes: a GaN substrate 1 containing an n-type impurity and being made of silicon carbide or a nitride semiconductor; a multilayer structure 10 provided on a main surface of the GaN substrate 1; a p-electrode 17 formed on the multilayer structure 10; a first n-electrode 18 substantially covering the entire rear surface of the GaN substrate 1; and a second n-electrode 20 provided on the first n-electrode 18 so as to expose at least a portion of the periphery of the first n-electrode 18.

摘要翻译： 根据本发明的半导体发光器件包括：包含n型杂质并由碳化硅或氮化物半导体制成的GaN衬底1; 设置在GaN衬底1的主表面上的多层结构10; 形成在多层结构体10上的p电极17; 基本上覆盖GaN衬底1的整个后表面的第一n电极18; 以及设置在第一n电极18上以露出第一n电极18的周边的至少一部分的第二n电极20。

公开(公告)号：US20120267664A1

公开(公告)日：2012-10-25

申请号：US13444131

申请日：2012-04-11

申请人： Songbaek CHOE ,  Naomi ANZUE ,  Ryou KATO ,  Toshiya YOKOGAWA

发明人： Songbaek CHOE ,  Naomi ANZUE ,  Ryou KATO ,  Toshiya YOKOGAWA

IPC分类号： H01L33/50 ,  H01L33/40 ,  H01L33/32

CPC分类号： H01L33/405 ,  H01L33/0075 ,  H01L33/06 ,  H01L33/16 ,  H01L33/32 ,  H01L33/325 ,  H01L33/502 ,  H01L2224/16225

摘要： A method for fabricating a nitride-based semiconductor light-emitting device includes a step (a) of forming a nitride-based semiconductor multi-layer structure (20) including a p-type AldGaeN layer (25) having an m-plane as a growing plane, and a step (b) of forming an Ag electrode (30) so as to be in contact with a growing plane (13) of the p-type AldGaeN layer (25). The step (b) includes a step (b1) of forming the Ag electrode (30) having a thickness in the range of 200 nm or more to 1,000 nm or less, and a step (b2) of heating the Ag electrode (30) to a temperature in the range of 400° C. or more to 600° C. or less.

摘要翻译： 一种用于制造氮化物基半导体发光器件的方法包括：形成氮化物基半导体多层结构（20）的步骤（a），其包括具有m面的p型AldGaeN层（25）作为 以及形成Ag电极（30）以与p型AldGaeN层（25）的生长平面（13）接触的步骤（b）。 步骤（b）包括形成厚度在200nm以上至1000nm以下的Ag电极（30）的工序（b1）和加热Ag电极（30）的工序（b2） 达到400℃以上的温度或更高至600℃或更低的温度。

公开(公告)号：US08222670B2

公开(公告)日：2012-07-17

申请号：US13109213

申请日：2011-05-17

申请人： Naomi Anzue ,  Gaku Sugahara ,  Yoshiaki Hasegawa ,  Akihiko Ishibashi ,  Toshiya Yokogawa

发明人： Naomi Anzue ,  Gaku Sugahara ,  Yoshiaki Hasegawa ,  Akihiko Ishibashi ,  Toshiya Yokogawa

IPC分类号： H01L33/00

CPC分类号： H01S5/34333 ,  B82Y20/00 ,  H01L33/32 ,  H01L33/38 ,  H01L33/40 ,  H01S5/0202 ,  H01S5/02272 ,  H01S5/028 ,  H01S5/0425 ,  H01S5/22 ,  H01S5/2201 ,  H01S5/3202 ,  H01S2304/04

摘要： A semiconductor light-emitting device according to the present invention includes: a GaN substrate 1 containing an n-type impurity and being made of silicon carbide or a nitride semiconductor; a multilayer structure 10 provided on a main surface of the GaN substrate 1; a p-electrode 17 formed on the multilayer structure 10; a first n-electrode 18 substantially covering the entire rear surface of the GaN substrate 1; and a second n-electrode 20 provided on the first n-electrode 18 so as to expose at least a portion of the periphery of the first n-electrode 18.

摘要翻译： 根据本发明的半导体发光器件包括：包含n型杂质并由碳化硅或氮化物半导体制成的GaN衬底1; 设置在GaN衬底1的主表面上的多层结构10; 形成在多层结构体10上的p电极17; 基本上覆盖GaN衬底1的整个后表面的第一n电极18; 以及设置在第一n电极18上以露出第一n电极18的周边的至少一部分的第二n电极20。

公开(公告)号：US20110266575A1

公开(公告)日：2011-11-03

申请号：US13124162

申请日：2010-09-21

申请人： Naomi Anzue ,  Toshiya Yokogawa

发明人： Naomi Anzue ,  Toshiya Yokogawa

IPC分类号： H01L33/36 ,  H01L21/28 ,  H01L29/20

CPC分类号： H01L29/452 ,  H01L21/28575 ,  H01L24/14 ,  H01L29/045 ,  H01L29/2003 ,  H01L33/16 ,  H01L33/32 ,  H01L33/40 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/181 ,  H01L2924/00 ,  H01L2924/00012

摘要： A nitride-based semiconductor device includes: a nitride-based semiconductor multilayer structure including a p-type semiconductor region, a surface of the p-type semiconductor region being an m-plane; and an electrode that is arranged on the p-type semiconductor region, wherein the p-type semiconductor region is made of an AlxGayInzN semiconductor (where x+y+z=1, x≧0, y≧0, and z≧0), and the electrode contains Mg, Zn and Ag.

摘要翻译： 氮化物类半导体器件包括：包含p型半导体区域的氮化物基半导体多层结构，p型半导体区域的表面是m面; 和配置在p型半导体区域上的电极，其中p型半导体区域由Al x Ga y In z N半导体（其中x + y + z = 1，x≥0，y≥0，z≥0） ，电极含有Mg，Zn和Ag。

公开(公告)号：US20110215340A1

公开(公告)日：2011-09-08

申请号：US13109213

申请日：2011-05-17

申请人： Naomi Anzue ,  Gaku Sugahara ,  Yoshiaki Hasegawa ,  Akihiko Ishibashi ,  Toshiya Yokogawa

发明人： Naomi Anzue ,  Gaku Sugahara ,  Yoshiaki Hasegawa ,  Akihiko Ishibashi ,  Toshiya Yokogawa

IPC分类号： H01L33/02

CPC分类号： H01S5/34333 ,  B82Y20/00 ,  H01L33/32 ,  H01L33/38 ,  H01L33/40 ,  H01S5/0202 ,  H01S5/02272 ,  H01S5/028 ,  H01S5/0425 ,  H01S5/22 ,  H01S5/2201 ,  H01S5/3202 ,  H01S2304/04

摘要： A semiconductor light-emitting device according to the present invention includes: a GaN substrate 1 containing an n-type impurity and being made of silicon carbide or a nitride semiconductor; a multilayer structure 10 provided on a main surface of the GaN substrate 1; a p-electrode 17 formed on the multilayer structure 10; a first n-electrode 18 substantially covering the entire rear surface of the GaN substrate 1; and a second n-electrode 20 provided on the first n-electrode 18 so as to expose at least a portion of the periphery of the first n-electrode 18.

摘要翻译： 根据本发明的半导体发光器件包括：包含n型杂质并由碳化硅或氮化物半导体制成的GaN衬底1; 设置在GaN衬底1的主表面上的多层结构10; 形成在多层结构体10上的p电极17; 基本上覆盖GaN衬底1的整个后表面的第一n电极18; 以及设置在第一n电极18上以露出第一n电极18的周边的至少一部分的第二n电极20。

公开(公告)号：US20090022193A1

公开(公告)日：2009-01-22

申请号：US11908430

申请日：2006-03-09

申请人： Yoshiaki Hasegawa ,  Gaku Sugahara ,  Naomi Anzue ,  Akihiko Ishibashi ,  Toshiya Yokogawa

发明人： Yoshiaki Hasegawa ,  Gaku Sugahara ,  Naomi Anzue ,  Akihiko Ishibashi ,  Toshiya Yokogawa

IPC分类号： H01S5/343 ,  H01L33/00

CPC分类号： H01S5/32341 ,  H01L21/28575 ,  H01L29/2003 ,  H01L29/452 ,  H01L29/861 ,  H01L33/20 ,  H01L33/382 ,  H01L33/40 ,  H01S5/0207 ,  H01S5/0421 ,  H01S5/0425 ,  H01S2301/173

摘要： An nitride semiconductor device according to the present invention is a nitride semiconductor device including: an n-GaN substrate 10; a semiconductor multilayer structure 100 formed on a principal face of the n-GaN substrate 10, the semiconductor multilayer structure 100 including a p-type region and an n-type region; a p-side electrode 32 which is in contact with a portion of the p-type region included in the semiconductor multilayer structure 100; and an n-side electrode 34 provided on the rear face of the n-GaN substrate 10. The rear face of the n-GaN substrate includes a nitrogen surface, such that a carbon concentration at an interface between the rear face and the n-side electrode 34 is adjusted to 5 atom % or less.

摘要翻译： 根据本发明的氮化物半导体器件是氮化物半导体器件，其包括：n-GaN衬底10; 形成在n-GaN衬底10的主面上的半导体多层结构100，包括p型区和n型区的半导体层叠结构100; p侧电极32，其与包含在半导体多层结构体100中的p型区域的一部分接触; 以及设置在n-GaN衬底10的背面上的n侧电极34.n-GaN衬底的背面包括氮表面，使得在背面和n- 侧电极34被调整为5原子％以下。

公开(公告)号：US20120168811A1

公开(公告)日：2012-07-05

申请号：US13412618

申请日：2012-03-06

申请人： Toshiya YOKOGAWA ,  Ryou KATO ,  Naomi ANZUE

发明人： Toshiya YOKOGAWA ,  Ryou KATO ,  Naomi ANZUE

IPC分类号： H01L33/32 ,  H01L29/207

CPC分类号： H01L33/0075 ,  H01L33/32 ,  H01L33/40

摘要： A nitride-based semiconductor device includes a p-type AldGaeN layer 25 whose growing plane is an m-plane and an electrode 30 provided on the p-type AldGaeN layer 25. The AldGaeN layer 25 includes a p-AldGaeN contact layer 26 that is made of an AlxGayInzN (x+y+z=1, x≧0, y>0, z≧0) semiconductor, which has a thickness of not less than 26 nm and not more than 60 nm. The p-AldGaeN contact layer 26 includes a body region 26A which contains Mg of not less than 4×1019 cm−3 and not more than 2×1020 cm−3 and a high concentration region 26B which is in contact with the electrode 30 and which has a Mg concentration of not less than 1×1021 cm−3.

摘要翻译： 氮化物基半导体器件包括其生长面为m面的p型AldGaeN层25和设置在p型AldGaeN层25上的电极30. AldGaeN层25包括p-AldGaeN接触层26，其为 （x + y + z = 1，x≥0，y> 0，z≥0）半导体，其厚度不小于26nm且不大于60nm。 p-AldGaeN接触层26包括主体区域26A，其包含不小于4×1019cm-3且不大于2×1020cm-3的Mg和与电极30接触的高浓度区域26B，以及 其Mg浓度不小于1×1021cm-3。

公开(公告)号：US08124986B2

公开(公告)日：2012-02-28

申请号：US13124162

申请日：2010-09-21

申请人： Naomi Anzue ,  Toshiya Yokogawa

发明人： Naomi Anzue ,  Toshiya Yokogawa

IPC分类号： H01L33/36

CPC分类号： H01L29/452 ,  H01L21/28575 ,  H01L24/14 ,  H01L29/045 ,  H01L29/2003 ,  H01L33/16 ,  H01L33/32 ,  H01L33/40 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/181 ,  H01L2924/00 ,  H01L2924/00012

摘要： A nitride-based semiconductor device includes: a nitride-based semiconductor multilayer structure including a p-type semiconductor region, a surface of the p-type semiconductor region being an m-plane; and an electrode that is arranged on the p-type semiconductor region, wherein the p-type semiconductor region is made of an AlxGayInzN semiconductor (where x+y+z=1, x≧0, y≧0, and z≧0), and the electrode contains Mg, Zn and Ag.

摘要翻译： 氮化物类半导体器件包括：包含p型半导体区域的氮化物基半导体多层结构，p型半导体区域的表面是m面; 和配置在p型半导体区域上的电极，其中p型半导体区域由Al x Ga y In z N半导体（其中x + y + z = 1，x≥0，y≥0，z≥0） ，电极含有Mg，Zn和Ag。

公开(公告)号：US20110304025A1

公开(公告)日：2011-12-15

申请号：US13213362

申请日：2011-08-19

申请人： Naomi ANZUE ,  Toshiya YOKOGAWA ,  Yoshiaki HASEGAWA

发明人： Naomi ANZUE ,  Toshiya YOKOGAWA ,  Yoshiaki HASEGAWA

IPC分类号： H01L23/544 ,  H01L21/78

CPC分类号： H01L21/0254 ,  H01S5/02

摘要： A nitride compound semiconductor element according to the present invention is a nitride compound semiconductor element including a substrate 1 having an upper face and a lower face and a semiconductor multilayer structure 40 supported by the upper face of the substrate 1, such that the substrate 1 and the semiconductor multilayer structure 40 have at least two cleavage planes. At least one cleavage inducing member 3 which is in contact with either one of the two cleavage planes is provided, and a size of the cleavage inducing member 3 along a direction parallel to the cleavage plane is smaller than a size of the upper face of the substrate 1 along the direction parallel to the cleavage plane.

摘要翻译： 根据本发明的氮化物化合物半导体元件是包括具有上表面和下表面的基板1和由基板1的上表面支撑的半导体多层结构40的氮化物化合物半导体元件，使得基板1和 半导体多层结构40具有至少两个解理面。 提供了与两个解理面中的任一个接触的至少一个切割诱导构件3，并且沿着与解理面平行的方向的切割诱导构件3的尺寸小于 衬底1沿着平行于解理面的方向。

公开(公告)号：US07816696B2

公开(公告)日：2010-10-19

申请号：US11908430

申请日：2006-03-09

申请人： Yoshiaki Hasegawa ,  Gaku Sugahara ,  Naomi Anzue ,  Akihiko Ishibashi ,  Toshiya Yokogawa

发明人： Yoshiaki Hasegawa ,  Gaku Sugahara ,  Naomi Anzue ,  Akihiko Ishibashi ,  Toshiya Yokogawa

IPC分类号： H01L29/267 ,  H01L21/332

CPC分类号： H01S5/32341 ,  H01L21/28575 ,  H01L29/2003 ,  H01L29/452 ,  H01L29/861 ,  H01L33/20 ,  H01L33/382 ,  H01L33/40 ,  H01S5/0207 ,  H01S5/0421 ,  H01S5/0425 ,  H01S2301/173

摘要： An nitride semiconductor device according to the present invention is a nitride semiconductor device including: an n-GaN substrate 10; a semiconductor multilayer structure 100 formed on a principal face of the n-GaN substrate 10, the semiconductor multilayer structure 100 including a p-type region and an n-type region; a p-side electrode 32 which is in contact with a portion of the p-type region included in the semiconductor multilayer structure 100; and an n-side electrode 34 provided on the rear face of the n-GaN substrate 10. The rear face of the n-GaN substrate includes a nitrogen surface, such that a carbon concentration at an interface between the rear face and the n-side electrode 34 is adjusted to 5 atom % or less.

摘要翻译： 根据本发明的氮化物半导体器件是氮化物半导体器件，其包括：n-GaN衬底10; 形成在n-GaN衬底10的主面上的半导体多层结构100，包括p型区和n型区的半导体层叠结构100; p侧电极32，其与包含在半导体多层结构体100中的p型区域的一部分接触; 以及设置在n-GaN衬底10的背面上的n侧电极34.n-GaN衬底的背面包括氮表面，使得在背面和n- 侧电极34被调整为5原子％以下。