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    METHOD AND SYSTEM FOR CONTROLLING RESISTIVITY IN INGOTS MADE OF COMPENSATED FEEDSTOCK SILICON
    4.
    发明申请
    METHOD AND SYSTEM FOR CONTROLLING RESISTIVITY IN INGOTS MADE OF COMPENSATED FEEDSTOCK SILICON 审中-公开
    用于控制补偿馈电硅的功率的方法和系统

    公开(公告)号：US20150243569A1

    公开(公告)日：2015-08-27

    申请号：US14634282

    申请日：2015-02-27

    申请人： Silicor Materials Inc.

    发明人： Fritz G. Kirscht ,  Marcin Walerysiak ,  Matthias Heuer ,  Anis Jouini ,  Kamel Ounadjela

    IPC分类号： H01L21/66 ,  H01L31/0288 ,  H01L31/18

    CPC分类号： H01L22/26 ,  C30B11/006 ,  C30B11/04 ,  C30B29/06 ,  H01L31/0288 ,  H01L31/182 ,  H01L31/1876

    摘要： Techniques for controlling resistivity in the formation of a silicon ingot from compensated feedstock silicon material prepares a compensated, upgraded metallurgical silicon feedstock for being melted to form a silicon melt. The compensated, upgraded metallurgical silicon feedstock provides semiconductor predominantly of a single type (p-type or n-type) for which the process assesses the concentrations of boron and phosphorus and adds a predetermined amount of boron, phosphorus, aluminum and/or gallium. The process further melts the silicon feedstock with the boron, phosphorus, aluminum and/or gallium to form a molten silicon solution from which to perform directional solidification and maintains the homogeneity of the resistivity of the silicon throughout the ingot. A balanced amount of phosphorus can be optionally added to the aluminum and/or gallium. Resistivity may also be measured repeatedly during ingot formation, and additional dopant may be added in response, either repeatedly or continuously.

    摘要翻译： 用于控制从补偿的原料硅材料形成硅锭中的电阻率的技术准备补偿的升级冶金硅原料以便熔化以形成硅熔体。 补偿的升级冶金硅原料提供半导体主要是单一类型（p型或n型），其过程评估硼和磷的浓度并加入预定量的硼，磷，铝和/或镓。 该方法进一步用硼，磷，铝和/或镓熔化硅原料，以形成熔融硅溶液，从而进行定向凝固，并保持硅在整个锭中的电阻率的均匀性。 可以任选地在铝和/或镓中加入平衡量的磷。 也可以在晶锭形成期间重复地测量电阻率，并且可以重复地或连续地响应地添加另外的掺杂剂。

    METHOD FOR PURIFICATION OF SILICON
    5.
    发明申请
    METHOD FOR PURIFICATION OF SILICON 审中-公开
    硅氧烷的纯化方法

    公开(公告)号：US20150040821A1

    公开(公告)日：2015-02-12

    申请号：US14374382

    申请日：2013-01-25

    申请人： Silicor Materials Inc.

    发明人： Alain Turenne ,  Dan Smith ,  Damon Dastgiri ,  Fritz G. Kirscht ,  Anthony Tummillo ,  Chunhui Zhang ,  Kamel Ounadjela

    IPC分类号： C30B29/06 ,  C30B11/02 ,  C30B11/00

    CPC分类号： C30B29/06 ,  C30B11/002 ,  C30B11/003 ,  C30B11/02 ,  C30B33/00

    摘要： The present invention relates to the purification of silicon. The present invention provides a method for purification of silicon. The method includes recrystallizing starting material-silicon from a molten solvent comprising aluminum to provide final recrystallized-silicon crystals. The method also includes washing the final recrystallized-silicon crystals with an aqueous acid solution to provide a final acid-washed-silicon. The method also includes directionally solidifying the final acid-washed-silicon to provide final directionally solidified-silicon crystals.

    摘要翻译： 本发明涉及硅的纯化。 本发明提供一种硅纯化方法。 该方法包括从包含铝的熔融溶剂中重结晶起始材料 - 硅，以提供最终的重结晶 - 硅晶体。 该方法还包括用酸水溶液洗涤最终的再结晶硅晶体以提供最终的酸洗硅。 该方法还包括定向凝固最后的酸洗硅以提供最终的定向凝固硅晶体。

    GERMANIUM ENRICHED SILICON MATERIAL FOR MAKING SOLAR CELLS
    6.
    发明申请
    GERMANIUM ENRICHED SILICON MATERIAL FOR MAKING SOLAR CELLS 审中-公开
    用于制造太阳能电池的富锗硅材料

    公开(公告)号：US20150020729A1

    公开(公告)日：2015-01-22

    申请号：US14312026

    申请日：2014-06-23

    申请人： Silicor Materials Inc.

    发明人： Fritz G. Kirscht ,  Matthias Heuer ,  Martin Kaes ,  Kamel Ounadjela

    IPC分类号： C30B13/10 ,  C30B29/06 ,  C30B15/04

    CPC分类号： C30B13/10 ,  C30B11/00 ,  C30B11/04 ,  C30B11/08 ,  C30B13/00 ,  C30B13/08 ,  C30B15/00 ,  C30B15/02 ,  C30B15/04 ,  C30B29/06 ,  C30B29/52 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

    摘要： Techniques for the formation of silicon ingots and crystals using silicon feedstock of various grades are described. A common feature is adding a predetermined amount of germanium to the melt and performing a crystallization to incorporate germanium into the silicon lattice of respective crystalline silicon materials. Such incorporated germanium results in improvements of respective silicon material characteristics, including increased material strength and improved electrical properties. This leads to positive effects at applying such materials in solar cell manufacturing and at making modules from those solar cells.

    摘要翻译： 描述了使用各种等级的硅原料形成硅锭和晶体的技术。 一个常见的特征是向熔体中加入预定量的锗，并进行结晶以将锗掺入各自晶体硅材料的硅晶格中。 这种并入的锗导致各种硅材料特性的改进，包括增加的材料强度和改善的电性能。 这导致在太阳能电池制造中应用这种材料以及从这些太阳能电池制造模块方面的积极作用。

    BIFACIAL SOLAR CELLS WITH BACK SURFACE DOPING
    9.
    发明申请
    BIFACIAL SOLAR CELLS WITH BACK SURFACE DOPING 审中-公开
    具有背面表面的双极太阳能电池

    公开(公告)号：US20130217169A1

    公开(公告)日：2013-08-22

    申请号：US13849813

    申请日：2013-03-25

    申请人： Silicor Materials Inc.

    发明人： Martin Kaes ,  Peter Borden ,  Kamel Ounadjela ,  Andreas Kraenzl ,  Alain Paul Blosse ,  Fritz G. Kirscht

    IPC分类号： H01L31/18

    CPC分类号： H01L31/18 ,  H01L31/022425 ,  H01L31/068 ,  H01L31/0684 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

    摘要： A simplified manufacturing process and the resultant bifacial solar cell (BSC) are provided, the simplified manufacturing process reducing manufacturing costs. The BSC includes an active region located on the front surface of the substrate, formed for example by a phosphorous diffusion step. The back surface includes a doped region, the doped region having the same conductivity as the substrate but with a higher doping level. Contact grids are formed, for example by screen printing. Front junction isolation is accomplished using a laser scribe.

    摘要翻译： 提供了简化的制造工艺和所得的双面太阳能电池（BSC），简化的制造工艺降低了制造成本。 BSC包括位于基板的前表面上的有源区，例如通过磷扩散步骤形成。 背面包括掺杂区域，该掺杂区域具有与衬底相同的导电性但具有较高的掺杂水平。 形成接触网格，例如通过丝网印刷。 使用激光划片实现前结隔离。