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    NONVOLATILE MEMORY DEVICE FOR REDUCING INTERFERENCE BETWEEN WORD LINES AND OPERATION METHOD THEREOF
    1.
    发明申请
    NONVOLATILE MEMORY DEVICE FOR REDUCING INTERFERENCE BETWEEN WORD LINES AND OPERATION METHOD THEREOF 失效
    用于减少字线之间的干扰的非易失性存储器件及其操作方法

    公开(公告)号：US20110222339A1

    公开(公告)日：2011-09-15

    申请号：US13044683

    申请日：2011-03-10

    申请人： Sung-Hoon Kim ,  Jai-Hyuk Song ,  Yong-Joon Choi

    发明人： Sung-Hoon Kim ,  Jai-Hyuk Song ,  Yong-Joon Choi

    IPC分类号： G11C16/28 ,  G11C16/10 ,  G11C16/08

    CPC分类号： G11C16/3418 ,  G11C16/10 ,  G11C16/28

    摘要： Provided are a nonvolatile memory device and a method of operating the same. The nonvolatile memory device in accordance with an embodiment of the inventive concept may include a string select line; a ground select line; a dummy word line adjacent to the ground select line; a first word line adjacent to the dummy word line; and a second word line disposed between the string select line and the first word line. The nonvolatile memory device is configured to apply a voltage to the dummy word line. When programming a memory cell connected to the first word line, a first dummy word line voltage lower than a voltage applied to the second word line is applied to the dummy word line. When programming a memory cell connected to the second word line, a second dummy word line voltage between a voltage applied to the first word line and the first dummy word line voltage is applied to the dummy word line. Accordingly, when a program operation is performed, a charge loss of a memory cell connected to a word line adjacent to a dummy word line can be reduced by changing a voltage applied to the dummy word line according to a select word line.

    摘要翻译： 提供一种非易失性存储器件及其操作方法。 根据本发明构思的实施例的非易失性存储器件可以包括串选择线; 地选线; 与地面选择线相邻的虚拟字线; 与虚拟字线相邻的第一字线; 以及设置在所述串选择线和所述第一字线之间的第二字线。 非易失性存储器件被配置为向虚拟字线施加电压。 当编程连接到第一字线的存储单元时，低于施加到第二字线的电压的第一虚拟字线电压被施加到虚拟字线。 当编程连接到第二字线的存储单元时，施加到第一字线的电压和第一虚拟字线电压之间的第二虚拟字线电压被施加到伪字线。 因此，当执行编程操作时，可以通过根据选择字线改变施加到虚拟字线的电压来减少连接到与虚拟字线相邻的字线的存储单元的电荷损失。

    Nonvolatile memory device for reducing interference between word lines and operation method thereof
    2.
    发明授权
    Nonvolatile memory device for reducing interference between word lines and operation method thereof 失效
    用于减少字线之间的干扰的非易失性存储器件及其操作方法

    公开(公告)号：US08488386B2

    公开(公告)日：2013-07-16

    申请号：US13044683

    申请日：2011-03-10

    申请人： Sung-Hoon Kim ,  Jai-Hyuk Song ,  Yong-Joon Choi

    发明人： Sung-Hoon Kim ,  Jai-Hyuk Song ,  Yong-Joon Choi

    IPC分类号： G11C11/34

    CPC分类号： G11C16/3418 ,  G11C16/10 ,  G11C16/28

    摘要： Provided are a nonvolatile memory device and a method of operating the same. The nonvolatile memory device in accordance with an embodiment of the inventive concept may include a string select line; a ground select line; a dummy word line adjacent to the ground select line; a first word line adjacent to the dummy word line; and a second word line disposed between the string select line and the first word line. The nonvolatile memory device is configured to apply a voltage to the dummy word line. When programming a memory cell connected to the first word line, a first dummy word line voltage lower than a voltage applied to the second word line is applied to the dummy word line. When programming a memory cell connected to the second word line, a second dummy word line voltage between a voltage applied to the first word line and the first dummy word line voltage is applied to the dummy word line. Accordingly, when a program operation is performed, a charge loss of a memory cell connected to a word line adjacent to a dummy word line can be reduced by changing a voltage applied to the dummy word line according to a select word line.

    摘要翻译： 提供一种非易失性存储器件及其操作方法。 根据本发明构思的实施例的非易失性存储器件可以包括串选择线; 地选线; 与地面选择线相邻的虚拟字线; 与虚拟字线相邻的第一字线; 以及设置在所述串选择线和所述第一字线之间的第二字线。 非易失性存储器件被配置为向虚拟字线施加电压。 当编程连接到第一字线的存储单元时，低于施加到第二字线的电压的第一虚拟字线电压被施加到虚拟字线。 当编程连接到第二字线的存储单元时，施加到第一字线的电压和第一虚拟字线电压之间的第二虚拟字线电压被施加到伪字线。 因此，当执行编程操作时，可以通过根据选择字线改变施加到虚拟字线的电压来减少连接到与虚拟字线相邻的字线的存储单元的电荷损失。

    Method and apparatus for capturing image in portable terminal
    5.
    发明授权
    Method and apparatus for capturing image in portable terminal 有权
    用于在便携式终端中捕获图像的方法和装置

    公开(公告)号：US09124794B2

    公开(公告)日：2015-09-01

    申请号：US13219915

    申请日：2011-08-29

    申请人： Jeong-In Choe ,  Jeong-Wook Seo ,  Sung-Hoon Kim ,  Sun-Mi Kwon ,  Ji-Yoon Ahn

    发明人： Jeong-In Choe ,  Jeong-Wook Seo ,  Sung-Hoon Kim ,  Sun-Mi Kwon ,  Ji-Yoon Ahn

    IPC分类号： H04N5/232 ,  H04N5/335

    CPC分类号： H04N5/23229 ,  H04N5/2257 ,  H04N5/232 ,  H04N5/23245 ,  H04N5/23293 ,  H04N5/335

    摘要： The present disclosure relates to a method and an apparatus for capturing an image in a portable terminal. Upon receiving an image for preview and an image for capture simultaneously by a camera module, the controller simultaneously outputs the image for the preview and the image for the capture to a main controller during a simultaneous output mode. The received image for the preview is displayed and stored for a predetermined time period for a subsequent retrieval, so that when a capture key is pressed to capture a target object, the stored image corresponding to a time point at which the capture key is activated is retrieved and stored.

    摘要翻译： 本公开涉及一种用于在便携式终端中捕获图像的方法和装置。 一旦接收到用于预览的图像和用于由相机模块同时捕获的图像，则控制器在同时输出模式期间同时将用于预览的图像和用于捕获的图像输出到主控制器。 所接收的预览图像被显示并存储预定时间段以用于随后检索，使得当按下捕获键以捕获目标对象时，对应于捕获密钥被激活的时间点的所存储的图像是 检索并存储。

    Memory devices including selective RWW and RMW decoding
    8.
    发明授权
    Memory devices including selective RWW and RMW decoding 有权
    存储器件包括选择性RWW和RMW解码

    公开(公告)号：US08848465B2

    公开(公告)日：2014-09-30

    申请号：US13532911

    申请日：2012-06-26

    申请人： Seo-Hee Kim ,  Seong-Hyun Jeon ,  Hoi-Ju Chung ,  Sung-Hoon Kim

    发明人： Seo-Hee Kim ,  Seong-Hyun Jeon ,  Hoi-Ju Chung ,  Sung-Hoon Kim

    IPC分类号： G11C7/00 ,  G11C7/10 ,  G11C7/02

    CPC分类号： G11C7/02 ,  G11C7/1006 ,  G11C13/0004 ,  G11C13/004 ,  G11C13/0061 ,  G11C13/0069 ,  G11C2013/0042 ,  G11C2213/72

    摘要： A nonvolatile memory device is provided, which includes a memory core including a plurality of nonvolatile memory cells, a first read circuit that reads a first codeword from the memory core during a Read While Write (RWW) operation, a second read circuit that reads a second codeword from the memory core during a Read Modification Write (RMW) operation, and a common decoder that is shared by the first read circuit and the second read circuit and selectively decodes the first codeword or the second codeword.

    摘要翻译： 提供了一种非易失性存储器件，其包括包括多个非易失性存储器单元的存储器核心，在读写时（RWW）操作期间从存储器核心读取第一代码字的第一读取电路，读取第一读取电路 在读取修改写入（RMW）操作期间来自存储器核心的第二码字以及由第一读取电路和第二读取电路共享的公共解码器，并且选择性地解码第一码字或第二码字。

    Display substrate and method of manufacturing the same
    9.
    发明授权
    Display substrate and method of manufacturing the same 有权
    显示基板及其制造方法

    公开(公告)号：US08835956B2

    公开(公告)日：2014-09-16

    申请号：US13287153

    申请日：2011-11-02

    申请人： Zin-Taek Park ,  Hyeong-Chan Ko ,  Hyun Park ,  Byeong-Yun Nam ,  Sang-Hoon Lee ,  Sung-Hoon Kim

    发明人： Zin-Taek Park ,  Hyeong-Chan Ko ,  Hyun Park ,  Byeong-Yun Nam ,  Sang-Hoon Lee ,  Sung-Hoon Kim

    IPC分类号： H01L33/00 ,  G02F1/1345 ,  H01L27/12

    CPC分类号： H01L27/124 ,  G02F1/13458 ,  H01L27/1288

    摘要： A display substrate includes a substrate, a pixel part, a pad part and a sacrificial electrode. The substrate includes a display area and a peripheral area. The pixel part is on the display area and includes a switching element, and a pixel electrode electrically connected to the switching element. The pad part is on the peripheral area and contacts a terminal of an external device. The pad part includes a pad electrode a contact electrode. The pad electrode includes a first metal layer, and a second metal layer on the first metal layer, and the contact electrode contacts the second metal layer. The sacrificial electrode is spaced apart from the pad electrode and contacts the contact electrode. An exposed portion of the sacrificial electrode is exposed to an external side of the display substrate.

    摘要翻译： 显示基板包括基板，像素部分，焊盘部分和牺牲电极。 基板包括显示区域和周边区域。 像素部分在显示区域上，并且包括开关元件和电连接到开关元件的像素电极。 焊盘部分在外围区域上，并与外部设备的端子接触。 焊盘部分包括焊盘电极和接触电极。 焊盘电极包括第一金属层和第一金属层上的第二金属层，并且接触电极接触第二金属层。 牺牲电极与焊盘电极间隔开并与接触电极接触。 牺牲电极的露出部分暴露于显示基板的外侧。

    Liquid crystal display and manufacturing method thereof
    10.
    发明授权
    Liquid crystal display and manufacturing method thereof 有权
    液晶显示及其制造方法

    公开(公告)号：US08659734B2

    公开(公告)日：2014-02-25

    申请号：US13215907

    申请日：2011-08-23

    申请人： Sung-Hoon Kim ,  Yoon-Sung Um ,  Joo-Seok Yeom

    发明人： Sung-Hoon Kim ,  Yoon-Sung Um ,  Joo-Seok Yeom

    IPC分类号： G02F1/1343 ,  G02F1/1333

    CPC分类号： G02F1/136209 ,  G02F1/133345 ,  G02F1/134363 ,  G02F1/136227 ,  G02F2001/134372 ,  H01L27/1288

    摘要： A liquid crystal display, including: a first substrate and a second substrate; a liquid crystal layer; a first data line disposed on the first substrate; a pixel electrode disposed on the first substrate; and a common electrode disposed on the first substrate and overlapping at least a portion of the pixel electrode and the first data line. One of the pixel electrode and the common electrode includes a plurality of branch electrodes spaced apart from each other and the other of has an at least approximately planar shape that is substantially parallel to a surface of at least one of the first substrate and the second substrate. The display can also include a passivation layer having a dielectric constant of about 3.5 or less, and including a first portion disposed between the common electrode and the first data line.

    摘要翻译： 一种液晶显示器，包括：第一基板和第二基板; 液晶层; 设置在第一基板上的第一数据线; 设置在所述第一基板上的像素电极; 以及公共电极，设置在所述第一基板上并与所述像素电极和所述第一数据线的至少一部分重叠。 像素电极和公共电极中的一个包括彼此间隔开的多个分支电极，另一个具有基本上平行于第一基板和第二基板中的至少一个的表面的至少近似平面的形状 。 显示器还可以包括具有约3.5或更小介电常数的钝化层，并且包括设置在公共电极和第一数据线之间的第一部分。