摘要:
A spiropiperidine-naphthoxazine compound represented by the following general formula (I) is valuable as a photochromic compound: ##STR1## wherein (a) R.sub.1 represents a C1-C18 alkyl group, C7-C15 aralkyl group which may be substituted, a C1-C10 alkenyl group or a C6-C15 aryl group which may be substituted, (b) R.sub.2 through R.sub.9 represent a group R.sub.1 defined above, a hydrogen atom, or a C5-C10 alicyclic ring or a norbonyl or adamantyl group, which is bonded between groups present on one skeleton carbon atom or between groups on adjacent skeleton carbon atoms (at the ortho-position), (c) R.sub. 10 represents a C1-C18 alkyl group, a C7-C15 aralkyl group which may be substituted or a C1-C10 alkenyl group, and (d) R.sub.11 through R.sub.16 represent a hydrogen atom, a C1-C9 alkyl group, a C1-C5 alkoxyl group, a halogen atom, a nitro group or a cyano group.
摘要:
Corrosion-resistant copper alloys for the manufacture of radiators are composed of, by weight, 25-40% zinc, 0.005-0.070% phosphorus, 0.05-1.0% each tin and aluminum, and the balance copper and inevitable impurities.
摘要:
There is provided a film carrier comprising a resin base film and a rolled copper foil laminated thereon, said rolled copper foil forming leads for mounting semiconductor chips or other electronic components in place, characterized in that said rolled copper foil is made of a copper alloy composition consisting essentially of a total of 0.005 to 1.5% by weight of one or two or more selected from a group consisting of______________________________________ P 0.005-0.05 wt %, B 0.005-0.05 wt %, Al 0.01-0.5 wt %, As 0.01-0.5 wt %, Cd 0.01-0.5 wt %, Co 0.01-0.5 wt %, Fe 0.01-0.5 wt %, In 0.01-0.5 wt %, Mg 0.01-0.5 wt %, Mn 0.01-0.5 wt %, Ni 0.01-0.5 wt %, Si 0.01-0.5 wt %, Sn 0.01-0.5 wt %, Te 0.01-0.5 wt %, Ag 0.01-1 wt %, Cr 0.01-1 wt %, Hf 0.01-1 wt %, Zn 0.01-1 wt % and Zn 0.01-1 wt % ______________________________________ and the remainder Cu with inevitable impurities, preferably with oxygen content of not more than 50 ppm. There is also provided a method for manufacturing a film carrier characterized in that the leads of the film carrier for mounting semiconductor chips or other electronic components in place are formed by the steps of providing a rolled copper alloy foil having the composition defined above, preferably strain relief annealing it after its final cold rolling and then laminating the annealed foil onto a resin base film followed by etching.
摘要:
An Al-killed cold-rolled steel sheet with excellent demagnetization characteristics is provided which is substantially consisted of 0.005% or less C; from 0.05 to 0.50% Mn; 0.010% or less S; from 0.01 to 0.08% Sol.Al; 0.0050% or less N; wherein Mn %/S %.gtoreq.7 and (Sol.Al % - 0.003%)/N %.gtoreq.6; and the remainder iron and inevitable impurities. A shadow mask made of such Al-killed cold-rolled steel sheet and a color television receiver using the same exhibit a very excellent function. A preferred process for producing such an Al-killed cold-rolled steel is also provided, said process being characterized in first obtaining a steel or a specific composition by the use of a vacuum degassing apparatus and then subjecting the steel to sequential steps of hot rolling, cold rolling, decarburization-annealing, and cold rolling.
摘要:
There is provided a film carrier comprising a resin base film and a rolled copper foil laminated thereon, said rolled copper foil forming leads for mounting semiconductor chips or other electronic components in place, characterized in that said rolled copper foil is made of a copper alloy composition consisting essentially of a total of 0.005 to 1.5% by weight of one or two or more selected from a group consisting of______________________________________ P 0.005-0.05 wt %, B 0.005-0.05 wt %, Al 0.01-0.5 wt %, As 0.01-0.5 wt %, Cd 0.01-0.5 wt %, Co 0.01-0.5 wt %, Fe 0.01-0.5 wt %, In 0.01-0.5 wt %, Mg 0.01-0.5 wt %, Mn 0.01-0.5 wt %, Ni 0.01-0.5 wt %, Si 0.01-0.5 wt %, Sn 0.01-0.5 wt %, Te 0.01-0.5 wt %, Ag 0.01-1 wt %, Cr 0.01-1 wt %, Hf 0.01-1 wt %, Zn 0.01-1 wt % and Zn 0.01-1 wt % ______________________________________ and the remainder Cu with inevitable impurities, preferably with oxygen content of not more than 50 ppm. There is also provided a method for manufacturing a film carrier characterized in that the leads of the film carrier for mounting semiconductor chips or other electronic components in place are formed by the steps of providing a rolled copper alloy foil having the composition defined above, preferably strain relief annealing it after its final cold rolling and then laminating the annealed foil onto a resin base film followed by etching.