Film carrier and method of manufacturing same
    2.
    发明授权
    Film carrier and method of manufacturing same 失效
    电影载体及其制造方法

    公开(公告)号:US4908275A

    公开(公告)日:1990-03-13

    申请号:US160479

    申请日:1988-02-25

    IPC分类号: H01L23/498 H05K1/00 H05K1/09

    摘要: There is provided a film carrier comprising a resin base film and a rolled copper foil laminated thereon, said rolled copper foil forming leads for mounting semiconductor chips or other electronic components in place, characterized in that said rolled copper foil is made of a copper alloy composition consisting essentially of a total of 0.005 to 1.5% by weight of one or two or more selected from a group consisting of______________________________________ P 0.005-0.05 wt %, B 0.005-0.05 wt %, Al 0.01-0.5 wt %, As 0.01-0.5 wt %, Cd 0.01-0.5 wt %, Co 0.01-0.5 wt %, Fe 0.01-0.5 wt %, In 0.01-0.5 wt %, Mg 0.01-0.5 wt %, Mn 0.01-0.5 wt %, Ni 0.01-0.5 wt %, Si 0.01-0.5 wt %, Sn 0.01-0.5 wt %, Te 0.01-0.5 wt %, Ag 0.01-1 wt %, Cr 0.01-1 wt %, Hf 0.01-1 wt %, Zn 0.01-1 wt % and Zn 0.01-1 wt % ______________________________________ and the remainder Cu with inevitable impurities, preferably with oxygen content of not more than 50 ppm. There is also provided a method for manufacturing a film carrier characterized in that the leads of the film carrier for mounting semiconductor chips or other electronic components in place are formed by the steps of providing a rolled copper alloy foil having the composition defined above, preferably strain relief annealing it after its final cold rolling and then laminating the annealed foil onto a resin base film followed by etching.

    Method of manufacturing film carrier
    3.
    发明授权
    Method of manufacturing film carrier 失效
    薄膜载体的制造方法

    公开(公告)号:US5004520A

    公开(公告)日:1991-04-02

    申请号:US444575

    申请日:1989-12-01

    IPC分类号: H01L23/498 H05K1/00 H05K1/09

    摘要: There is provided a film carrier comprising a resin base film and a rolled copper foil laminated thereon, said rolled copper foil forming leads for mounting semiconductor chips or other electronic components in place, characterized in that said rolled copper foil is made of a copper alloy composition consisting essentially of a total of 0.005 to 1.5% by weight of one or two or more selected from a group consisting of______________________________________ P 0.005-0.05 wt %, B 0.005-0.05 wt %, Al 0.01-0.5 wt %, As 0.01-0.5 wt %, Cd 0.01-0.5 wt %, Co 0.01-0.5 wt %, Fe 0.01-0.5 wt %, In 0.01-0.5 wt %, Mg 0.01-0.5 wt %, Mn 0.01-0.5 wt %, Ni 0.01-0.5 wt %, Si 0.01-0.5 wt %, Sn 0.01-0.5 wt %, Te 0.01-0.5 wt %, Ag 0.01-1 wt %, Cr 0.01-1 wt %, Hf 0.01-1 wt %, Zn 0.01-1 wt % and Zn 0.01-1 wt % ______________________________________ and the remainder Cu with inevitable impurities, preferably with oxygen content of not more than 50 ppm. There is also provided a method for manufacturing a film carrier characterized in that the leads of the film carrier for mounting semiconductor chips or other electronic components in place are formed by the steps of providing a rolled copper alloy foil having the composition defined above, preferably strain relief annealing it after its final cold rolling and then laminating the annealed foil onto a resin base film followed by etching.

    摘要翻译: 提供了一种膜载体,其包括层压在其上的树脂基膜和卷绕的铜箔,所述轧制铜箔形成用于将半导体芯片或其它电子部件安装到位的引线,其特征在于,所述轧制铜箔由铜合金组合物 基本上由0.005〜1.5重量%的选自P 0.005-0.05重量%,B 0.005-0.05重量%,-Al 0.01-0.5重量%,As 0.01-0.5重量%中的一种或两种以上组成的组合, 0.5重量%,-Cd 0.01-0.5重量%,Co 0.01-0.5重量%,-Fe 0.01-0.5重量%,In 0.01-0.5重量%,-Mg 0.01-0.5重量%,Mn 0.01-0.5重量% Ni 0.01-0.5wt%,Si 0.01-0.5wt%,-Sn 0.01-0.5wt%,Te 0.01-0.5wt%,-Ag 0.01-1wt%,Cr 0.01-1wt%,-f 0.01-1wt %,Zn 0.01-1重量%,-Zn 0.01-1重量%,余量为不可避免的杂质,优选氧含量不大于50ppm。 还提供了一种薄膜载体的制造方法,其特征在于,用于将半导体芯片或其它电子部件安装就位的薄膜载体的引线通过以下步骤形成:提供具有上述组成的轧制铜合金箔,优选应变 在其最终冷轧后进行退火退火,然后将退火的箔层压到树脂基膜上,然后蚀刻。

    Spiropiperidinenaphthoxazine compound
    4.
    发明授权
    Spiropiperidinenaphthoxazine compound 失效
    螺哌啶萘恶嗪化合物

    公开(公告)号:US4772700A

    公开(公告)日:1988-09-20

    申请号:US94488

    申请日:1987-08-19

    CPC分类号: C07D498/10 G03C1/685

    摘要: A spiropiperidine-naphthoxazine compound represented by the following general formula (I) is valuable as a photochromic compound: ##STR1## wherein (a) R.sub.1 represents a C1-C18 alkyl group, C7-C15 aralkyl group which may be substituted, a C1-C10 alkenyl group or a C6-C15 aryl group which may be substituted, (b) R.sub.2 through R.sub.9 represent a group R.sub.1 defined above, a hydrogen atom, or a C5-C10 alicyclic ring or a norbonyl or adamantyl group, which is bonded between groups present on one skeleton carbon atom or between groups on adjacent skeleton carbon atoms (at the ortho-position), (c) R.sub. 10 represents a C1-C18 alkyl group, a C7-C15 aralkyl group which may be substituted or a C1-C10 alkenyl group, and (d) R.sub.11 through R.sub.16 represent a hydrogen atom, a C1-C9 alkyl group, a C1-C5 alkoxyl group, a halogen atom, a nitro group or a cyano group.