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43 条记录 (耗时 0.019 秒)

    Method of manufacturing film carrier
    2.
    发明授权
    Method of manufacturing film carrier 失效
    薄膜载体的制造方法

    公开(公告)号：US5004520A

    公开(公告)日：1991-04-02

    申请号：US444575

    申请日：1989-12-01

    申请人： Masahiro Tsuji ,  Susumu Kawauchi ,  Hiroshi Nakayama

    发明人： Masahiro Tsuji ,  Susumu Kawauchi ,  Hiroshi Nakayama

    IPC分类号： H01L23/498 ,  H05K1/00 ,  H05K1/09

    CPC分类号： H01L23/49866 ,  H05K1/09 ,  H01L2924/0002 ,  H05K1/0393 ,  H05K2201/0355 ,  Y10S428/901 ,  Y10T29/49121 ,  Y10T428/31678 ,  Y10T428/31681 ,  Y10T428/31692

    摘要： There is provided a film carrier comprising a resin base film and a rolled copper foil laminated thereon, said rolled copper foil forming leads for mounting semiconductor chips or other electronic components in place, characterized in that said rolled copper foil is made of a copper alloy composition consisting essentially of a total of 0.005 to 1.5% by weight of one or two or more selected from a group consisting of______________________________________ P 0.005-0.05 wt %, B 0.005-0.05 wt %, Al 0.01-0.5 wt %, As 0.01-0.5 wt %, Cd 0.01-0.5 wt %, Co 0.01-0.5 wt %, Fe 0.01-0.5 wt %, In 0.01-0.5 wt %, Mg 0.01-0.5 wt %, Mn 0.01-0.5 wt %, Ni 0.01-0.5 wt %, Si 0.01-0.5 wt %, Sn 0.01-0.5 wt %, Te 0.01-0.5 wt %, Ag 0.01-1 wt %, Cr 0.01-1 wt %, Hf 0.01-1 wt %, Zn 0.01-1 wt % and Zn 0.01-1 wt % ______________________________________ and the remainder Cu with inevitable impurities, preferably with oxygen content of not more than 50 ppm. There is also provided a method for manufacturing a film carrier characterized in that the leads of the film carrier for mounting semiconductor chips or other electronic components in place are formed by the steps of providing a rolled copper alloy foil having the composition defined above, preferably strain relief annealing it after its final cold rolling and then laminating the annealed foil onto a resin base film followed by etching.

    摘要翻译： 提供了一种膜载体，其包括层压在其上的树脂基膜和卷绕的铜箔，所述轧制铜箔形成用于将半导体芯片或其它电子部件安装到位的引线，其特征在于，所述轧制铜箔由铜合金组合物 基本上由0.005〜1.5重量％的选自P 0.005-0.05重量％，B 0.005-0.05重量％，-Al 0.01-0.5重量％，As 0.01-0.5重量％中的一种或两种以上组成的组合， 0.5重量％，-Cd 0.01-0.5重量％，Co 0.01-0.5重量％，-Fe 0.01-0.5重量％，In 0.01-0.5重量％，-Mg 0.01-0.5重量％，Mn 0.01-0.5重量％ Ni 0.01-0.5wt％，Si 0.01-0.5wt％，-Sn 0.01-0.5wt％，Te 0.01-0.5wt％，-Ag 0.01-1wt％，Cr 0.01-1wt％，-f 0.01-1wt ％，Zn 0.01-1重量％，-Zn 0.01-1重量％，余量为不可避免的杂质，优选氧含量不大于50ppm。 还提供了一种薄膜载体的制造方法，其特征在于，用于将半导体芯片或其它电子部件安装就位的薄膜载体的引线通过以下步骤形成：提供具有上述组成的轧制铜合金箔，优选应变 在其最终冷轧后进行退火退火，然后将退火的箔层压到树脂基膜上，然后蚀刻。

    Film carrier and method of manufacturing same
    3.
    发明授权
    Film carrier and method of manufacturing same 失效
    电影载体及其制造方法

    公开(公告)号：US4908275A

    公开(公告)日：1990-03-13

    申请号：US160479

    申请日：1988-02-25

    申请人： Masahiro Tsuji ,  Susumu Kawauchi ,  Hiroshi Nakayama

    发明人： Masahiro Tsuji ,  Susumu Kawauchi ,  Hiroshi Nakayama

    IPC分类号： H01L23/498 ,  H05K1/00 ,  H05K1/09

    CPC分类号： H01L23/49866 ,  H05K1/09 ,  H01L2924/0002 ,  H05K1/0393 ,  H05K2201/0355 ,  Y10S428/901 ,  Y10T29/49121 ,  Y10T428/31678 ,  Y10T428/31681 ,  Y10T428/31692

    摘要： There is provided a film carrier comprising a resin base film and a rolled copper foil laminated thereon, said rolled copper foil forming leads for mounting semiconductor chips or other electronic components in place, characterized in that said rolled copper foil is made of a copper alloy composition consisting essentially of a total of 0.005 to 1.5% by weight of one or two or more selected from a group consisting of______________________________________ P 0.005-0.05 wt %, B 0.005-0.05 wt %, Al 0.01-0.5 wt %, As 0.01-0.5 wt %, Cd 0.01-0.5 wt %, Co 0.01-0.5 wt %, Fe 0.01-0.5 wt %, In 0.01-0.5 wt %, Mg 0.01-0.5 wt %, Mn 0.01-0.5 wt %, Ni 0.01-0.5 wt %, Si 0.01-0.5 wt %, Sn 0.01-0.5 wt %, Te 0.01-0.5 wt %, Ag 0.01-1 wt %, Cr 0.01-1 wt %, Hf 0.01-1 wt %, Zn 0.01-1 wt % and Zn 0.01-1 wt % ______________________________________ and the remainder Cu with inevitable impurities, preferably with oxygen content of not more than 50 ppm. There is also provided a method for manufacturing a film carrier characterized in that the leads of the film carrier for mounting semiconductor chips or other electronic components in place are formed by the steps of providing a rolled copper alloy foil having the composition defined above, preferably strain relief annealing it after its final cold rolling and then laminating the annealed foil onto a resin base film followed by etching.

    Optically active bicyclo[3.3.0]octane and processes for the preparation thereof
    5.
    发明授权
    Optically active bicyclo[3.3.0]octane and processes for the preparation thereof 失效
    光学活性双环[3.3.0]辛烷及其制备方法

    公开(公告)号：US4871869A

    公开(公告)日：1989-10-03

    申请号：US293414

    申请日：1989-01-04

    申请人： Kenji Mori ,  Masahiro Tsuji

    发明人： Kenji Mori ,  Masahiro Tsuji

    IPC分类号： C07C405/00 ,  C07D317/72 ,  C07F7/18

    CPC分类号： C07D317/72 ,  C07C405/0083 ,  C07F7/1856 ,  Y02P20/582

    摘要： New intermediate, an optically active (1R,5S,6S,7R)-6-tert-butyldiphenylsilyloxmethyl-7-hydroxy-bicyclo[3.3.0]octan-3-one (I) having high optical purity which is useful for the synthesis of an optically active carbacyclin and an optically active pentalenolactone E methyl ester. The compound (I) is also an intermediate compound serving for the purpose of improving the optical purity of (1R,5S,6S,7R)-3,3-ethylenedioxy-6-hydroxymethyl-7-(2'-tetrahydropyranyloxy)bicyclo[3.3.0]octane. The compound (I) is prepared by reacting (1R,5S,6S,7R)-3,3-ethylenedioxy-6-hydroxymethyl-7-(2'-tetrahydropyranyloxy)bicyclo[3.3.0]octane with tert-butylchlorodiphenylsilane in the presence of a base and removing the ethylenedioxy and tetrahydropyranyl groups of the resultant compound under an acid condition.

    High-strength, high-conductivity copper alloy
    6.
    发明授权
    High-strength, high-conductivity copper alloy 失效
    高强度，高导电性铜合金

    公开(公告)号：US4666667A

    公开(公告)日：1987-05-19

    申请号：US844237

    申请日：1986-03-25

    申请人： Morinori Kamio ,  Masahiro Tsuji ,  Hirohito Miyashita

    发明人： Morinori Kamio ,  Masahiro Tsuji ,  Hirohito Miyashita

    IPC分类号： C22C9/00 ,  C22C9/02 ,  H01B1/02

    CPC分类号： C22C9/02 ,  C22F1/08

    摘要： A high-strength, high-conductivity copper alloy comprises, all by weight, from 0.8 to 4.0% of Sn, from more than 0.01 to 0.4% of P, from 0.05 to 1.0% of Ni, from 0.05 to 1.0% of one, two or more elements selected from Al, Hf, Be, Mo, Zn, Te, Pb, Co, Zr, and Nb, and the remainder of Cu and inevitable impurities. The impurities include not more than 0.0020% of oxygen.

    摘要翻译： 高强度，高导电性铜合金全部重量含有Sn：0.8〜4.0％，P：0.01〜0.4％，Ni：0.05〜1.0％，0.05〜1.0％ 选自Al，Hf，Be，Mo，Zn，Te，Pb，Co，Zr和Nb中的两种或更多种元素，其余的Cu和不可避免的杂质。 杂质含有不大于0.0020％的氧气。

    High-strength-conductivity copper alloy
    8.
    发明授权
    High-strength-conductivity copper alloy 失效
    高强度导电铜合金

    公开(公告)号：US4362579A

    公开(公告)日：1982-12-07

    申请号：US219617

    申请日：1980-12-24

    申请人： Masahiro Tsuji

    发明人： Masahiro Tsuji

    IPC分类号： C22C9/00 ,  C22C9/04 ,  H01B1/02 ,  H01H1/025 ,  C22F1/08

    CPC分类号： C22C9/04 ,  H01H1/025

    摘要： A copper alloy with high strength and excellent electrical conductivity, corrosion resistance, and spring qualities, comprises 0.4-8% nickel, 0.1-3% silicon, 10-35% zinc, concomitant impurities, and the remainder copper, all by weight. It further comprises at least one element as an accessory ingredient or ingredients selected from the group consisting of 0.001-0.1 wt % each of phosphorus and arsenic and 0.01-1 wt % each of titanium, chromium, tin, and magnesium. The accessory ingredient or ingredients combinedly account for 0.001-2% of the total weight of the alloy composition.

    摘要翻译： 具有高强度和优异的导电性，耐腐蚀性和弹簧质量的铜合金包括0.4-8％的镍，0.1-3％的硅，10-35％的锌，伴随的杂质，其余的铜都是重量。 其还包含至少一种元素作为辅助成分或选自由磷和砷各自为0.001-0.1重量％和钛，铬，锡和镁各自为0.01-1重量％的组分组成的组分。 辅助成分或成分合成占合金组合物总重量的0.001-2％。