公开(公告)号：US09852891B2

公开(公告)日：2017-12-26

申请号：US14688363

申请日：2015-04-16

申请人： Svetozar Popovic ,  Janardan Upadhyay ,  Leposava Vuskovic ,  H. Lawrence Phillips ,  Anne-Marie Valente-Feliciano

发明人： Svetozar Popovic ,  Janardan Upadhyay ,  Leposava Vuskovic ,  H. Lawrence Phillips ,  Anne-Marie Valente-Feliciano

IPC分类号： B44C1/22 ,  C03C15/00 ,  C03C25/68 ,  C23F1/00 ,  H01J37/32

CPC分类号： H01J37/32192 ,  H01J37/32082 ,  H01J37/32394 ,  H01J37/32403 ,  H01J37/32449 ,  H01J37/32467 ,  H01J37/32541 ,  H01J37/32568 ,  H01J37/32596 ,  H01J37/32816 ,  H01J2237/334

摘要： A method for efficient plasma etching of surfaces inside three-dimensional structures can include positioning an inner electrode within the chamber cavity; evacuating the chamber cavity; adding a first inert gas to the chamber cavity; regulating the pressure in the chamber; generating a plasma sheath along the inner wall of the chamber cavity; adjusting a positive D.C. bias on the inner electrode to establish an effective plasma sheath voltage; adding a first electronegative gas to the chamber cavity; optionally readjusting the positive D.C. bias on the inner electrode reestablish the effective plasma sheath voltage at the chamber cavity; etching the inner wall of the chamber cavity; and polishing the inner wall to a desired surface roughness.