公开(公告)号：US20170040144A1

公开(公告)日：2017-02-09

申请号：US14688363

申请日：2015-04-16

申请人： Svetozar Popovic ,  JANARDAN UPADHYAY ,  LEPOSAVA VUSKOVIC ,  H. Lawrence Phillips ,  ANNE-MARIE VALENTE-FELICIANO

发明人： Svetozar Popovic ,  JANARDAN UPADHYAY ,  LEPOSAVA VUSKOVIC ,  H. Lawrence Phillips ,  ANNE-MARIE VALENTE-FELICIANO

IPC分类号： H01J37/32

CPC分类号： H01J37/32192 ,  H01J37/32082 ,  H01J37/32394 ,  H01J37/32403 ,  H01J37/32449 ,  H01J37/32467 ,  H01J37/32541 ,  H01J37/32568 ,  H01J37/32596 ,  H01J37/32816 ,  H01J2237/334

摘要： A method for efficient plasma etching of surfaces inside three-dimensional structures can include positioning an inner electrode within the chamber cavity; evacuating the chamber cavity; adding a first inert gas to the chamber cavity; regulating the pressure in the chamber; generating a plasma sheath along the inner wall of the chamber cavity; adjusting a positive D.C. bias on the inner electrode to establish an effective plasma sheath voltage; adding a first electronegative gas to the chamber cavity; optionally readjusting the positive D.C. bias on the inner electrode reestablish the effective plasma sheath voltage at the chamber cavity; etching the inner wall of the chamber cavity; and polishing the inner wall to a desired surface roughness.

摘要翻译： 用于对三维结构内的表面进行有效等离子体蚀刻的方法可以包括将内部电极定位在腔室内; 排空腔室; 向腔室内加入第一惰性气体; 调节室内的压力; 沿室腔的内壁产生等离子体护套; 调整内部电极上的正偏压以建立有效的等离子体鞘电压; 向腔室内加入第一电负性气体; 可选地重新调整内部电极上的正的直流偏压重新建立腔室上的有效等离子体鞘电压; 蚀刻室腔的内壁; 并将内壁抛光至所需的表面粗糙度。

公开(公告)号：US09852891B2

公开(公告)日：2017-12-26

申请号：US14688363

申请日：2015-04-16

申请人： Svetozar Popovic ,  Janardan Upadhyay ,  Leposava Vuskovic ,  H. Lawrence Phillips ,  Anne-Marie Valente-Feliciano

发明人： Svetozar Popovic ,  Janardan Upadhyay ,  Leposava Vuskovic ,  H. Lawrence Phillips ,  Anne-Marie Valente-Feliciano

IPC分类号： B44C1/22 ,  C03C15/00 ,  C03C25/68 ,  C23F1/00 ,  H01J37/32

CPC分类号： H01J37/32192 ,  H01J37/32082 ,  H01J37/32394 ,  H01J37/32403 ,  H01J37/32449 ,  H01J37/32467 ,  H01J37/32541 ,  H01J37/32568 ,  H01J37/32596 ,  H01J37/32816 ,  H01J2237/334

摘要： A method for efficient plasma etching of surfaces inside three-dimensional structures can include positioning an inner electrode within the chamber cavity; evacuating the chamber cavity; adding a first inert gas to the chamber cavity; regulating the pressure in the chamber; generating a plasma sheath along the inner wall of the chamber cavity; adjusting a positive D.C. bias on the inner electrode to establish an effective plasma sheath voltage; adding a first electronegative gas to the chamber cavity; optionally readjusting the positive D.C. bias on the inner electrode reestablish the effective plasma sheath voltage at the chamber cavity; etching the inner wall of the chamber cavity; and polishing the inner wall to a desired surface roughness.

公开(公告)号：US6097153A

公开(公告)日：2000-08-01

申请号：US183937

申请日：1998-11-02

申请人： John Brawley ,  H. Lawrence Phillips

发明人： John Brawley ,  H. Lawrence Phillips

IPC分类号： H05H7/20 ,  H05H9/00

CPC分类号： H05H7/20 ,  Y10S505/866

摘要： An improved method for welding accelerator cavities without the need for time consuming and expensive faying surface treatments comprising electron beam welding such cavities in a vacuum welding chamber within a vacuum envelope and using the following welding parameters: a beam voltage of between about 45 KV and 55 KV; a beam current between about 38 ma and 47 ma; a weld speed of about 15 cm/min; and a sharp focus and a rhombic raster of between about 9 KHz and 10 Khz. A welded cavity made according to the method of the present invention is also described.

摘要翻译： 一种用于焊接加速器腔的改进方法，而不需要耗费时间和昂贵的表面处理，包括在真空外壳内的真空焊接室中的电子束焊接这种空腔，并使用以下焊接参数：约45KV和55V之间的束电压 KV; 约38ma和47ma之间的束流; 焊缝速度约15厘米/分钟; 以及大约9KHz和10KHz之间的尖锐焦点和菱形光栅。 还描述了根据本发明的方法制造的焊接腔。