中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

6 records (took 0.015 seconds)

    DIELECTRIC FILM, DIELECTRIC ELEMENT, AND ELECTRONIC CIRCUIT BOARD
    2.
    发明申请
    DIELECTRIC FILM, DIELECTRIC ELEMENT, AND ELECTRONIC CIRCUIT BOARD 有权

    公开(公告)号：US20210130187A1

    公开(公告)日：2021-05-06

    申请号：US17071474

    申请日：2020-10-15

    Applicant: TDK CORPORATION

    Inventor： Toshio ASAHI ,  Masamitsu HAEMORI ,  Hitoshi SAITA

    IPC: C01G23/00 ,  C23C16/40 ,  C23C16/06 ,  C23C16/56 ,  H01G4/10 ,  H05K1/18 ,  H01G4/33

    Abstract: A dielectric film includes a main component of a complex oxide represented by a general formula of (Sr1-xCax)yTiO3. 0.40≤x≤0.90 and 0.90≤y≤1.10 are satisfied. A ratio of a diffraction peak intensity on (1, 1, 2) plane of the complex oxide to a diffraction peak intensity on (0, 0, 4) plane of the complex oxide in an X-ray diffraction chart of the dielectric film is 3.00 or more. Instead, a ratio of an intensity of a diffraction peak appearing at a diffraction angle 2θ of 32° or more and 34° or less to an intensity of a diffraction peak appearing at a diffraction angle 2θ of 46° or more and 48° or less in an X-ray diffraction chart of the dielectric film obtained by an X-ray diffraction measurement with Cu-Kα ray as an X-ray source is 3.00 or more.

    DIELECTRIC THIN FILM, DIELECTRIC ELEMENT AND ELECTRONIC CIRCUIT BOARD
    3.
    发明申请
    DIELECTRIC THIN FILM, DIELECTRIC ELEMENT AND ELECTRONIC CIRCUIT BOARD 有权

    公开(公告)号：US20210292244A1

    公开(公告)日：2021-09-23

    申请号：US17189859

    申请日：2021-03-02

    Applicant: TDK CORPORATION

    Inventor： Toshio ASAHI ,  Masamitsu HAEMORI ,  Hitoshi SAITA ,  Masahito FURUKAWA

    IPC: C04B35/58 ,  H01G4/12 ,  H01G4/008

    Abstract: A dielectric thin film contains Ca, Sr, Ti, Hf, O and N, wherein among crystal grains existing in a plane field of view of 1 μm square perpendicular to a film thickness direction of the dielectric thin film, a number ratio of crystal grains having a grain size of 19 nm or more and less than 140 nm is 95% or more, among the crystal grains existing in the plane field of view, a number ratio of first crystal grains having a grain size of 65 nm or more and less than 77 nm is 20% or more, and among the crystal grains existing in the plane field of view, a number ratio of second crystal grains having a grain size of 19 nm or more and less than 54 nm is 40% or less.

Patent Agency Ranking