Abstract:
A microelectronic device has a common terminal transistor with two or more channels, and sense transistors in corresponding areas of the channels. The channels and the sense transistors share a common node in a semiconductor substrate. The sense transistors are configured to provide sense currents that are representative of currents through the corresponding channels. The sense transistors are located so that a ratio of the channel currents to the corresponding sense currents have less than a target value of cross-talk. The microelectronic device may be implemented without a compensation circuit which provides a compensation signal used to adjust one or more of the sense currents to reduce cross-talk. A method of forming the microelectronic device, including estimating a potential distribution in the semiconductor substrate containing the common node of the common terminal transistor, and selecting locations for the sense transistors based on the estimated potential distribution, is disclosed.
Abstract:
A charge pump circuit includes a plurality of serially coupled stages and a plurality of clock drivers. A voltage output of a first of the stages is connected to a voltage input of a second of the stages. A voltage output of the second of the stages is boosted relative to a voltage input of the second of the stages. Each of the stages includes complementary charge pumps. Each of the charge pumps includes a pumping capacitor that stores charge in the stage. Each of the clock drivers drives a clock signal to the pumping capacitor of at least one of the stages. A voltage of the clock signal provided to the second of the stages is derived from the voltage input of the second of the stages.
Abstract:
An apparatus, comprising: a charge-pump; a sampler that samples an optical signal, including: a black sampler; a video sampler; and an analog to digital converter. The first aspect further provides a single clock that is coupled to and provides clocking signals to: a) the charge-pump logic that is coupled to the charge-pump; and b) the sampler logic that is coupled to the sampler that samples the optical signal, wherein if the clock for the charge pump is running faster than an analog front end (“AFE”) video sampling clock, a state-machine control is configured to: skip the charge pump clock period right before a video sample signal falling edge, thereby recovering to a normal operation the next charge-pump clock period, wherein this duty cycle modulation of charge pump clock will not substantially impact charge pump output.
Abstract:
A transistor is coupled between a first voltage input and a voltage output in a first current path. First circuitry is coupled to a second voltage input, a control terminal of the transistor, and the voltage output. Second circuitry is coupled between the control terminal and ground in a second current path and between the control terminal and ground in a third current path parallel to the second current path. The second current path includes the control terminal, first and second terminals of the second circuitry, and ground. The third current path includes the control terminal, a second and the third terminal of the second circuitry, and ground. Third circuitry is coupled between the control terminal and the voltage output in a fourth current path. The fourth current path includes the control terminal, first and second terminals of the third circuitry, and the voltage output.
Abstract:
A microelectronic device has a common terminal transistor with two or more channels, and sense transistors in corresponding areas of the channels. The channels and the sense transistors share a common node in a semiconductor substrate. The sense transistors are configured to provide sense currents that are representative of currents through the corresponding channels. The sense transistors are located so that a ratio of the channel currents to the corresponding sense currents have less than a target value of cross-talk. The microelectronic device may be implemented without a compensation circuit which provides a compensation signal used to adjust one or more of the sense currents to reduce cross-talk. A method of forming the microelectronic device, including estimating a potential distribution in the semiconductor substrate containing the common node of the common terminal transistor, and selecting locations for the sense transistors based on the estimated potential distribution, is disclosed.
Abstract:
Apparatus, devices, and systems to provide a low quiescent current load switch are disclosed. A disclosed load switch circuit includes a transconductor to convert a voltage to a current input to a transistor gate, the current input to the transistor gate to control the gate to deliver power to a load from a power supply. The example circuit includes a resistor to provide power from a charge pump to the gate as controlled by the transconductor. A disclosed apparatus includes a driver to control a gate of a transistor, the gate to enable the transistor to deliver power to a load from a power supply when the gate is activated, and a gate slope control to control a rate of change over time of a voltage associated with the gate to activate the gate and to disable the driver when the gate is activated.
Abstract:
An apparatus, comprising: a charge-pump; a sampler that samples an optical signal, including: a black sampler; a video sampler; and an analog to digital converter. The first aspect further provides a single clock that is coupled to and provides clocking signals to: a) the charge-pump logic that is coupled to the charge-pump; and b) the sampler logic that is coupled to the sampler that samples the optical signal, wherein if the clock for the charge pump is running faster than an analog front end (“AFE”) video sampling clock, a state-machine control is configured to: skip the charge pump clock period right before a video sample signal falling edge, thereby recovering to a normal operation the next charge-pump clock period, wherein this duty cycle modulation of charge pump clock will not substantially impact charge pump output.
Abstract:
An example device includes a first temperature sensor configured to provide a first current signal indicative of a temperature of a first circuit based on a voltage of a first temperature sensing element. The first circuit includes a power switch device and the first temperature sensing element. A second temperature sensor is configured to provide a second current signal indicative of temperature of a second circuit based on a voltage of a second temperature sensing element. The second circuit includes the second temperature sensing element. A trim circuit is configured to trim current in at least one of the first temperature sensor or the second temperature sensor to compensate for mismatch between temperature coefficients of the first and second temperature sensing elements.
Abstract:
An example device includes a first temperature sensor configured to provide a first current signal indicative of a temperature of a first circuit based on a voltage of a first temperature sensing element. The first circuit includes a power switch device and the first temperature sensing element. A second temperature sensor is configured to provide a second current signal indicative of temperature of a second circuit based on a voltage of a second temperature sensing element. The second circuit includes the second temperature sensing element. A trim circuit is configured to trim current in at least one of the first temperature sensor or the second temperature sensor to compensate for mismatch between temperature coefficients of the first and second temperature sensing elements.
Abstract:
A microelectronic device has a common terminal transistor with two or more channels, and sense transistors in corresponding areas of the channels. The channels and the sense transistors share a common node in a semiconductor substrate. The sense transistors are configured to provide sense currents that are representative of currents through the corresponding channels. The sense transistors are located so that a ratio of the channel currents to the corresponding sense currents have less than a target value of cross-talk. The microelectronic device may be implemented without a compensation circuit which provides a compensation signal used to adjust one or more of the sense currents to reduce cross-talk. A method of forming the microelectronic device, including estimating a potential distribution in the semiconductor substrate containing the common node of the common terminal transistor, and selecting locations for the sense transistors based on the estimated potential distribution, is disclosed.