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公开(公告)号:US20170343622A1
公开(公告)日:2017-11-30
申请号:US15169639
申请日:2016-05-31
Applicant: Texas Instruments Incorporated
Inventor: Erika Lynn Mazotti , Dok Won Lee , William David French , Byron J R Shulver , Thomas Dyer Bonifield , Ricky Alan Jackson , Neil Gibson
CPC classification number: G01R33/04 , G01R33/0052
Abstract: An integrated fluxgate device has a magnetic core on a control circuit. The magnetic core has a volume and internal structure sufficient to have low magnetic noise and low non-linearity. A stress control structure is disposed proximate to the magnetic core. An excitation winding, a sense winding and a compensation winding are disposed around the magnetic core. An excitation circuit disposed in the control circuit is coupled to the excitation winding, configured to provide current at high frequency to the excitation winding sufficient to generate a saturating magnetic field in the magnetic core during each cycle at the high frequency. An isolation structure is disposed between the magnetic core and the windings, sufficient to enable operation of the excitation winding and the sense winding at the high frequency at low power.
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公开(公告)号:US09633866B2
公开(公告)日:2017-04-25
申请号:US14715546
申请日:2015-05-18
Applicant: Texas Instruments Incorporated
Inventor: Byron J R Shulver
IPC: H01L21/3213 , H01L23/532 , H01L21/768 , H01L23/522 , H01L23/64 , H01L43/12
CPC classification number: H01L21/32134 , H01F41/308 , H01L21/31111 , H01L21/32139 , H01L21/76802 , H01L21/76877 , H01L23/5227 , H01L23/53238 , H01L23/53261 , H01L23/5329 , H01L23/645 , H01L43/12
Abstract: A microelectronic device is formed by forming a stack of alternating layers of a magnetic material and a dielectric material. An etch mask is formed over the magnetic laminate layer. An aqueous wet etch including 5 percent to 10 percent nitric acid, 0.5 percent to 2 percent sulphuric acid, and 0.5 percent to 3 percent hydrofluoric acid is used to etch the magnetic laminate layer where exposed by the etch mask to form a patterned magnetic laminate layer. An optional adhesion layer, if present, is also removed by the aqueous wet etch solution where exposed by the etch mask. The etch mask is subsequently removed.
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公开(公告)号:US10705159B2
公开(公告)日:2020-07-07
申请号:US16502317
申请日:2019-07-03
Applicant: TEXAS INSTRUMENTS INCORPORATED
Inventor: Erika Lynn Mazotti , Dok Won Lee , William David French , Byron J R Shulver , Thomas Dyer Bonifield , Ricky Alan Jackson , Neil Gibson
Abstract: An integrated fluxgate device has a magnetic core disposed over a semiconductor substrate. A first winding is disposed in a first metallization level above and a second metallization level below the magnetic core, and is configured to generate a first magnetic field in the magnetic core. A second winding is disposed in the first and second metallization levels and is configured to generate a second magnetic field in the magnetic core. A third winding is disposed in the first and second metallization levels and is configured to sense a magnetic field in the magnetic core that is the net of the first and second magnetic fields.
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公开(公告)号:US10345397B2
公开(公告)日:2019-07-09
申请号:US15169639
申请日:2016-05-31
Applicant: Texas Instruments Incorporated
Inventor: Erika Lynn Mazotti , Dok Won Lee , William David French , Byron J R Shulver , Thomas Dyer Bonifield , Ricky Alan Jackson , Neil Gibson
Abstract: An integrated fluxgate device has a magnetic core on a control circuit. The magnetic core has a volume and internal structure sufficient to have low magnetic noise and low non-linearity. A stress control structure is disposed proximate to the magnetic core. An excitation winding, a sense winding and a compensation winding are disposed around the magnetic core. An excitation circuit disposed in the control circuit is coupled to the excitation winding, configured to provide current at high frequency to the excitation winding sufficient to generate a saturating magnetic field in the magnetic core during each cycle at the high frequency. An isolation structure is disposed between the magnetic core and the windings, sufficient to enable operation of the excitation winding and the sense winding at the high frequency at low power.
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