公开(公告)号：US20250120157A1

公开(公告)日：2025-04-10

申请号：US18610150

申请日：2024-03-19

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Jonas Höhenberger ,  Ujwal Radhakrishna ,  Michael Lueders ,  Meng-Chia Lee ,  Chang Soo Suh ,  Zhikai Tang ,  Jungwoo Joh ,  Timothy Bryan Merkin ,  Stefan Herzer ,  Bernhard Ziegltrum ,  Helmut Rinck ,  Michael Hans Enzelberger-Heim ,  Ercuement Hasanoglu

IPC: H01L29/40 ,  H01L21/027 ,  H01L21/311 ,  H01L29/20 ,  H01L29/66 ,  H01L29/778

Abstract: The present disclosure generally relates to a semiconductor device having a slanted field plate. In an example, a semiconductor device includes a semiconductor substrate, a gate, a drain contact, a source contact, and a field plate. The gate is on a surface of the semiconductor substrate. The drain contact and a source contact are on the semiconductor substrate. The field plate is over the surface of the semiconductor substrate and extends from one side of the gate towards the drain contact. The field plate includes multiple field plate portions. Each of the multiple field plate portions has a uniform respective slope with respect to the surface, and the multiple field plate portions have different slopes.