Sourcing and securing dual supply rails of tamper protected battery backed domain
    3.
    发明授权
    Sourcing and securing dual supply rails of tamper protected battery backed domain 有权
    采购和保护篡改电池支持域的双电源轨

    公开(公告)号:US09231409B2

    公开(公告)日:2016-01-05

    申请号:US13744664

    申请日:2013-01-18

    Inventor: Erkan Bilhan

    CPC classification number: H02J4/00 G06F1/26 G06F21/86 Y10T307/383

    Abstract: This invention is a System On a Chip (SOC) requiring two tamper resistant externally generated power supplies. A first, higher power supply powers I/O and analog circuits. A second, lower power supply powers digital circuits and memory. A first voltage monitor circuit powered by said first power supply generates a first output signal when the first power supply is below an operational limit high level. A second voltage monitor circuit powered by said first power supply indicates when the second power supply is above an operational high limit level. A power switch is controlled by the first voltage monitor circuit. This power switch connects the second power supply and second load when closed and isolates them when open. Thus the memory cannot be accessed when the I/O and analog power supply is out of specification.

    Abstract translation: 本发明是一种片上系统(SOC),需要两个防篡改外部产生的电源。 第一个更高的电源为I / O和模拟电路供电。 第二个较低的电源为数字电路和存储器供电。 当第一电源低于操作极限高电平时,由所述第一电源供电的第一电压监视器电路产生第一输出信号。 由所述第一电源供电的第二电压监视器电路指示第二电源何时高于操作上限电平。 电源开关由第一电压监视电路控制。 此电源开关在关闭时连接第二个电源和第二个负载,并在打开时将其隔离。 因此,当I / O和模拟电源超出规格时,无法访问存储器。

    Stress reduction on stacked transistor circuits

    公开(公告)号:US12212317B2

    公开(公告)日:2025-01-28

    申请号:US18131009

    申请日:2023-04-05

    Abstract: A circuit includes a first transistor having first and second current terminals and a first control input, and a second transistor having third and fourth current terminals and a second control input. The third current terminal is connected to the second current terminal at an intermediate node and the fourth current terminal connected to a ground or supply node. In some cases, a third transistor is connected to the intermediate node to bias the intermediate rather than letting the intermediate node float. In other cases, a capacitor is connected to the intermediate node to reduce a negative voltage that might otherwise be present on the intermediate node.

    Stress reduction on stacked transistor circuits

    公开(公告)号:US11831309B2

    公开(公告)日:2023-11-28

    申请号:US16378742

    申请日:2019-04-09

    CPC classification number: H03K19/00315 H03K3/356113 H03K19/20

    Abstract: A circuit includes a first transistor having first and second current terminals and a first control input, and a second transistor having third and fourth current terminals and a second control input. The third current terminal is coupled to the second current terminal at an intermediate node. In some cases, a third transistor is connected to the intermediate node to bias the intermediate rather than letting the intermediate node float. In other cases, a capacitor is connected to the intermediate node to reduce a negative voltage that might otherwise be present on the intermediate node.

    STRESS REDUCTION ON STACKED TRANSISTOR CIRCUITS

    公开(公告)号:US20230238959A1

    公开(公告)日:2023-07-27

    申请号:US18131009

    申请日:2023-04-05

    CPC classification number: H03K19/00315 H03K19/20

    Abstract: A circuit includes a first transistor having first and second current terminals and a first control input, and a second transistor having third and fourth current terminals and a second control input. The third current terminal is connected to the second current terminal at an intermediate node and the fourth current terminal connected to a ground or supply node. In some cases, a third transistor is connected to the intermediate node to bias the intermediate rather than letting the intermediate node float. In other cases, a capacitor is connected to the intermediate node to reduce a negative voltage that might otherwise be present on the intermediate node.

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