公开(公告)号：US20210255372A1

公开(公告)日：2021-08-19

申请号：US17124158

申请日：2020-12-16

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： John Charles EHMKE

IPC: G02B5/00 ,  G02B26/08 ,  G02B27/00

Abstract: A system includes an optical film stack, where the optical film stack includes a substrate and a first inorganic layer on the substrate. The optical film stack also includes a first dielectric layer on the first inorganic layer and a first metal layer on the first dielectric layer. The optical film stack also includes a second dielectric layer on the first metal layer and a second inorganic layer on the second dielectric layer. The optical film stack also includes a second metal layer on the second inorganic layer.

公开(公告)号：US20200223690A1

公开(公告)日：2020-07-16

申请号：US16450138

申请日：2019-06-24

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： John Charles EHMKE

IPC: B81C1/00

Abstract: A method includes attaching an optically transparent wafer to a first surface of an interposer wafer. The interposer wafer has a second surface opposite the first surface, and the second surface has a first channel therein. The method further includes attaching the interposer wafer to a first surface of a semiconductor wafer, and etching a second channel through the optically transparent wafer and through the interposer wafer. The method then includes applying wax into the second channel, and sawing through the optically transparent wafer and through at least a portion of the interposer wafer to form a third channel having a width that is wider than a width of the second channel. The wax is then removed to expose a portion of the first surface of the semiconductor wafer.

公开(公告)号：US20170283255A1

公开(公告)日：2017-10-05

申请号：US15087120

申请日：2016-03-31

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： John Charles EHMKE ,  Simon Joshua JACOBS

IPC: B81C3/00 ,  C25D5/54 ,  C25D3/12 ,  C25D5/12 ,  C25D3/48 ,  C25D3/54

CPC classification number: B23K20/16 ,  B23K20/026 ,  B23K20/233 ,  B23K20/24 ,  B23K35/3033 ,  B23K2101/42 ,  B81C1/00269 ,  B81C2203/019 ,  B81C2203/036 ,  C25D5/10 ,  C25D5/12 ,  C25D5/14 ,  C25D5/50 ,  C25D5/505 ,  C25D7/123

Abstract: In described examples, a transient liquid phase (TLP) metal bonding material includes a first substrate and a base metal layer. The base metal layer is disposed over at least a portion of the first substrate. The base metal has a surface roughness (Ra) of between about 0.001 to 500 nm. Also, the TLP metal bonding material includes a first terminal metal layer that forms an external surface of the TLP metal bonding material. A metal fuse layer is positioned between the base metal layer and the first terminal metal layer. The TLP metal bonding material is stable at room temperature for at least a predetermined period of time.