公开(公告)号：US11367699B2

公开(公告)日：2022-06-21

申请号：US17009664

申请日：2020-09-01

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Hiroyuki Sada ,  Shoichi Iriguchi ,  Genki Yano ,  Luu Thanh Nguyen ,  Ashok Prabhu ,  Anindya Poddar ,  Yi Yan ,  Hau Nguyen

IPC: H01L23/00 ,  H01L21/78 ,  H01L21/683 ,  H01L23/495

Abstract: A method for backside metallization includes inkjet printing a pattern of nanosilver conductive ink on a first surface of a silicon wafer. The silicon wafer includes a plurality of dies. The pattern includes a clearance area along a scribe line between the dies. A laser is focused, through a second surface of the wafer, at a point between the first surface of the silicon wafer and the second surface of the silicon wafer. The second surface is opposite the first surface. The dies are separated along the scribe line.

公开(公告)号：US11469141B2

公开(公告)日：2022-10-11

申请号：US16057126

申请日：2018-08-07

Applicant: Texas Instruments Incorporated

Inventor： Michael Todd Wyant ,  Dave Charles Stepniak ,  Matthew John Sherbin ,  Sada Hiroyuki ,  Shoichi Iriguchi ,  Genki Yano

IPC: H01L21/78 ,  H01L23/58 ,  H01L21/683 ,  H01L21/67 ,  H01L21/268

Abstract: In a described example, a method includes: applying a dicing tape over a metal layer covering a portion of a surface of scribe streets on a device side of a semiconductor wafer that includes semiconductor device dies formed thereon separated from one another by the scribe streets; and placing the semiconductor wafer with the device side facing away from a laser in a stealth dicing machine. A power of a laser beam is adjusted to a first power level. The laser beam is focused through the non-device side of the semiconductor wafer to a first focal depth in the metal layer. The laser beam scans across the scribe streets and ablates the metal layer in the scribe streets. The method continues by singulating the semiconductor device dies using stealth dicing along the scribe streets in the stealth dicing machine.

公开(公告)号：US11171031B2

公开(公告)日：2021-11-09

申请号：US16041888

申请日：2018-07-23

Applicant: Texas Instruments Incorporated

Inventor： Matthew John Sherbin ,  Michael Todd Wyant ,  Dave Charles Stepniak ,  Hiroyuki Sada ,  Shoichi Iriguchi ,  Genki Yano

IPC: H01L21/683 ,  B28D5/00 ,  H01L21/78 ,  H01L21/687

Abstract: A die matrix expander includes a subring including ≥3 pieces, and a wafer frame supporting a dicing tape having an indentation for receiving pieces of the subring. The subring prior to expansion sits below a level of the wafer frame and has an outer diameter

公开(公告)号：US20230040267A1

公开(公告)日：2023-02-09

申请号：US17960568

申请日：2022-10-05

Applicant: Texas Instruments Incorporated

Inventor： Michael Todd Wyant ,  Dave Charles Stepniak ,  Matthew John Sherbin ,  Sada Hiroyuki ,  Shoichi Iriguchi ,  Genki Yano

IPC: H01L21/78 ,  H01L21/683 ,  H01L21/67 ,  H01L21/268 ,  H01L23/58

Abstract: In a described example, a method includes: applying a dicing tape over a metal layer covering a portion of a surface of scribe streets on a device side of a semiconductor wafer that includes semiconductor device dies formed thereon separated from one another by the scribe streets; and placing the semiconductor wafer with the device side facing away from a laser in a stealth dicing machine. A power of a laser beam is adjusted to a first power level. The laser beam is focused through the non-device side of the semiconductor wafer to a first focal depth in the metal layer. The laser beam scans across the scribe streets and ablates the metal layer in the scribe streets. The method continues by singulating the semiconductor device dies using stealth dicing along the scribe streets in the stealth dicing machine.

公开(公告)号：US20200051860A1

公开(公告)日：2020-02-13

申请号：US16057126

申请日：2018-08-07

Applicant: Texas Instruments Incorporated

Inventor： Michael Todd Wyant ,  Dave Charles Stepniak ,  Matthew John Sherbin ,  Sada Hiroyuki ,  Shoichi Iriguchi ,  Genki Yano

IPC: H01L21/78 ,  H01L21/683 ,  H01L23/58 ,  H01L21/67 ,  H01L21/268

Abstract: In a described example, a method includes: applying a dicing tape over a metal layer covering a portion of a surface of scribe streets on a device side of a semiconductor wafer that includes semiconductor device dies formed thereon separated from one another by the scribe streets; and placing the semiconductor wafer with the device side facing away from a laser in a stealth dicing machine. A power of a laser beam is adjusted to a first power level. The laser beam is focused through the non-device side of the semiconductor wafer to a first focal depth in the metal layer. The laser beam scans across the scribe streets and ablates the metal layer in the scribe streets. The method continues by singulating the semiconductor device dies using stealth dicing along the scribe streets in the stealth dicing machine.

公开(公告)号：US20170338184A1

公开(公告)日：2017-11-23

申请号：US15159046

申请日：2016-05-19

Applicant: Texas Instruments Incorporated

Inventor： Shoichi Iriguchi

IPC: H01L23/544 ,  H01L21/683 ,  H01L21/78

CPC classification number: H01L23/544 ,  H01L21/6836 ,  H01L21/78 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2223/5446

Abstract: A method of dicing an integrated circuit wafer by partially sawing the scribe street from the backside of the wafer and then completing sawing the scribe street from the front side of the wafer. A method of dicing an integrated circuit wafer by backgrinding the wafer prior to partially sawing the scribe street from the backside of the wafer and then completing sawing the scribe street from the front side of the wafer.

公开(公告)号：US08993412B1

公开(公告)日：2015-03-31

申请号：US14098018

申请日：2013-12-05

Applicant: Texas Instruments Incorporated

Inventor： Shoichi Iriguchi ,  Noboru Nakanishi

IPC: H01L21/00 ,  H01L23/00 ,  H01L21/78

CPC classification number: H01L21/78 ,  H01L21/3043 ,  H01L21/561 ,  H01L21/6836 ,  H01L23/49513 ,  H01L23/49548 ,  H01L23/562 ,  H01L24/27 ,  H01L24/29 ,  H01L24/32 ,  H01L24/48 ,  H01L24/73 ,  H01L24/83 ,  H01L24/97 ,  H01L2221/68327 ,  H01L2224/2732 ,  H01L2224/27416 ,  H01L2224/27436 ,  H01L2224/27848 ,  H01L2224/2919 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2224/83193 ,  H01L2224/94 ,  H01L2224/97 ,  H01L2924/00014 ,  H01L2924/181 ,  H01L2224/27 ,  H01L2924/00012 ,  H01L2224/83 ,  H01L2224/85 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

Abstract: In one aspect of the present invention, a method of sawing a semiconductor wafer will be described. A semiconductor wafer is positioned in a wafer sawing apparatus that includes a sawing blade and a movable support structure that physically supports the semiconductor wafer. The semiconductor wafer is coupled with the support structure with various layers, including a dicing tape and an anchoring material. The anchoring material and the wafer are cut with the sawing blade. During the cutting operation, the anchoring material reduces backside chipping of the die and eliminates fly-away die. Various aspects of the present invention relate to arrangements and a wafer sawing apparatus that involve the aforementioned sawing method.

Abstract translation: 在本发明的一个方面，将描述锯切半导体晶片的方法。 半导体晶片定位在晶片锯切装置中，其包括物理地支撑半导体晶片的锯切刀片和可动支撑结构。 半导体晶片与具有各种层的支撑结构耦合，包括切割带和锚固材料。 用锯刀切割锚定材料和晶片。 在切割操作期间，锚固材料减少了模具的背面碎裂并且消除了飞离模具。 本发明的各个方面涉及包括上述锯切方法的布置和晶片锯切装置。

公开(公告)号：US12198982B2

公开(公告)日：2025-01-14

申请号：US17960568

申请日：2022-10-05

Applicant: Texas Instruments Incorporated

Inventor： Michael Todd Wyant ,  Dave Charles Stepniak ,  Matthew John Sherbin ,  Sada Hiroyuki ,  Shoichi Iriguchi ,  Genki Yano

IPC: H01L21/78 ,  H01L21/268 ,  H01L21/67 ,  H01L21/683 ,  H01L23/58

Abstract: In a described example, a method includes: applying a dicing tape over a metal layer covering a portion of a surface of scribe streets on a device side of a semiconductor wafer that includes semiconductor device dies formed thereon separated from one another by the scribe streets; and placing the semiconductor wafer with the device side facing away from a laser in a stealth dicing machine. A power of a laser beam is adjusted to a first power level. The laser beam is focused through the non-device side of the semiconductor wafer to a first focal depth in the metal layer. The laser beam scans across the scribe streets and ablates the metal layer in the scribe streets. The method continues by singulating the semiconductor device dies using stealth dicing along the scribe streets in the stealth dicing machine.

公开(公告)号：US11664276B2

公开(公告)日：2023-05-30

申请号：US16205692

申请日：2018-11-30

Applicant: Texas Instruments Incorporated

Inventor： Matthew John Sherbin ,  Michael Todd Wyant ,  Christopher Daniel Manack ,  Hiroyuki Sada ,  Shoichi Iriguchi ,  Genki Yano ,  Ming Zhu ,  Joseph O. Liu

IPC: H01L23/544 ,  H01L21/78 ,  B23K26/364 ,  H01L23/00 ,  H01L21/268

CPC classification number: H01L21/78 ,  B23K26/364 ,  H01L21/268 ,  H01L23/562

Abstract: A semiconductor die includes a substrate having a semiconductor surface layer bon a front side with active circuitry including at last one transistor therein and a back side. The sidewall edges of the semiconductor die have at least one damage region pair including an angled damage feature region relative to a surface normal of the semiconductor die that is above a damage region that is more normal to the surface normal of the die as compared to the angled damage feature region.

公开(公告)号：US11482442B2

公开(公告)日：2022-10-25

申请号：US17184553

申请日：2021-02-24

Applicant: Texas Instruments Incorporated

Inventor： Matthew John Sherbin ,  Michael Todd Wyant ,  Dave Charles Stepniak ,  Sada Hiroyuki ,  Shoichi Iriguchi ,  Genki Yano

IPC: H01L21/683 ,  H01L21/687

Abstract: A subring for holding tape connected to semiconductor dies and spanning a passage in a frame having a first diameter includes a base. An opening extends through the base and has a second diameter at least as large as the first diameter. A projection extends from the base to ends positioned on opposite sides of the base. The projection is adapted to clamp the tape to the frame and adapted to prevent relative movement between the tape, the subring, and the frame.