公开(公告)号：US20240113156A1

公开(公告)日：2024-04-04

申请号：US17957983

申请日：2022-09-30

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Scott William JESSEN ,  Steven Lee PRINS ,  Sameer Prakash PENDHARKAR ,  Abbas ALI ,  Gregory Boyd SHINN

IPC: H01L49/02 ,  H01L27/06

CPC classification number: H01L28/24 ,  H01L27/0629 ,  H01L21/0274

Abstract: A passive circuit component includes an edge having a low line edge roughness (LER). A method for manufacturing the passive circuit component includes a self-aligned double patterning (SADP) etch process using a tri-layer process flow. The tri-layer process flow includes use of an underlayer, hard mask, and photoresist. The passive circuit component made by this method achieves improved mismatch between like components due to the low LER.

公开(公告)号：US20150325472A1

公开(公告)日：2015-11-12

申请号：US14803538

申请日：2015-07-20

Applicant: Texas Instruments Incorporated

Inventor： Thomas John ATON ,  Steven Lee PRINS ,  Scott William JESSEN

IPC: H01L21/768 ,  H01L21/283 ,  H01L21/28

CPC classification number: H01L21/32139 ,  G03F1/00 ,  G03F1/42 ,  G03F9/7084 ,  H01L21/28123 ,  H01L21/283 ,  H01L21/31144 ,  H01L21/76816 ,  H01L21/76877 ,  H01L21/76897 ,  H01L23/544 ,  H01L29/6659 ,  H01L2223/54426 ,  H01L2223/54453 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method of aligning a new pattern to more than one previously defined pattern during the manufacture of an integrated circuit. A method of aligning a photolighography pattern reticle to a first previously defined pattern in a first direction and also aligning the photolithography pattern reticle to a second previously defined pattern in a second direction. A method of aligning a photolighography pattern reticle to two previously defined patterns in the same direction.

Abstract translation: 在集成电路的制造期间将新图案对准多于一个先前定义的图案的方法。 一种将摄影图案掩模版与第一方向上的第一预定义图案对准并且还将光刻图案掩模版与第二方向上的第二预定义图案对准的方法。 将摄影图案掩模版与相同方向上的两个先前定义的图案对准的方法。