公开(公告)号：US20190309420A1

公开(公告)日：2019-10-10

申请号：US16371818

申请日：2019-04-01

Applicant: TOKYO ELECTRON LIMITED

Inventor： Masami OIKAWA ,  Ken ITABASHI ,  Satoshi TAKAGI ,  Masahisa WATANABE ,  Keisuke FUJITA ,  Tatsuya MIYAHARA ,  Hiroyuki HAYASHI

IPC: C23C16/455 ,  H01L21/673 ,  H01L21/02 ,  H01L21/311 ,  C23C16/52

Abstract: There is provided a substrate processing apparatus including: a processing container accommodating a boat on which a substrate is mounted; and an injector that extends in a vertical direction along an inner wall of the processing container in a vicinity of the processing container and has a plurality of gas holes in a longitudinal direction, wherein the plurality of gas holes is oriented toward the inner wall in the vicinity of the processing container.

公开(公告)号：US20140251209A1

公开(公告)日：2014-09-11

申请号：US14202587

申请日：2014-03-10

Applicant: Tokyo Electron Limited

Inventor： Tomoyuki OBU ,  Masaki KUROKAWA ,  Hiroki IRIUDA ,  Ken ITABASHI ,  Yasushi TAKEUCHI

IPC: H01L21/673

CPC classification number: H01L21/67303 ,  H01L21/67309

Abstract: A support member includes: a mounting unit having a first main surface and a second main surface, the first main surface being configured to mount a first object to be processed thereon and the second main surface being configured to mount a second object to be processed thereon; and a wall installed in a part of the outer peripheral portion along the outer periphery of the mounting unit, the wall having a first portion protruding in a vertical direction than the first object to be processed mounted on the first main surface of the mounting unit. The inner peripheral surface of the first portion of the wall is formed in a first shape that allows the first object to be processed to be held by the first portion of the wall.

Abstract translation: 支撑构件包括：具有第一主表面和第二主表面的安装单元，所述第一主表面被配置为将待处理的第一物体安装在其上，并且所述第二主表面被配置为将待处理的第二物体安装在其上 ; 以及沿所述安装单元的外周安装在所述外周部的一部分中的壁，所述壁具有在垂直方向上突出的第一部分，所述第一部分安装在所述安装单元的所述第一主表面上。 壁的第一部分的内周表面形成为允许第一物体被处理以由壁的第一部分保持的第一形状。

公开(公告)号：US20220178031A1

公开(公告)日：2022-06-09

申请号：US17594371

申请日：2020-04-06

Applicant: Tokyo Electron Limited

Inventor： Michitaka AITA ,  Ken ITABASHI ,  Ryota IFUKU ,  Takaaki KATO ,  Kazuki YAMADA

IPC: C23C16/48 ,  C23C16/455 ,  C23C16/52 ,  C23C16/40

Abstract: A film formation method includes: adsorbing a precursor of a film-forming raw material gas onto a surface of a substrate on which a film is to be formed by irradiating an interior of a processing container with ultraviolet light which has a first wavelength and separates a predetermined bond of the raw material gas while supplying the raw material gas into the processing container in which the substrate is disposed; and forming a layer, in which the precursor and a reaction gas react on the surface of the substrate, by supplying the reaction gas into the processing container.