公开(公告)号：US20170114464A1

公开(公告)日：2017-04-27

申请号：US15295183

申请日：2016-10-17

Applicant: TOKYO ELECTRON LIMITED

Inventor： Hiroki IRIUDA ,  Kohei FUKUSHIMA

IPC: C23C16/46 ,  C23C16/455 ,  H01L21/67 ,  C23C16/458

CPC classification number: H01L21/67109 ,  C23C16/45591 ,  C23C16/4584 ,  H01L21/67309

Abstract: A vertical heat treatment apparatus includes: a substrate holder including a column, substrate holding parts configured to hold the substrates, and gas flow guide parts installed in the column in a corresponding relationship with the substrates; an elevator stand configured to support the substrate holder and to load the substrate holder into the reaction vessel from below the reaction vessel; a rotating mechanism installed in the elevator stand and configured to rotate the substrate holder about a vertical axis; a process gas supply port and an exhaust port respectively formed at a rear side and a front side of a substrate holding region; and a plurality of baffle parts installed independently of the substrate holder so that the baffle parts protrude from the outside toward spaces between the gas flow guide parts adjoining each other and run into the spaces.

公开(公告)号：US20140080315A1

公开(公告)日：2014-03-20

申请号：US14029366

申请日：2013-09-17

Applicant: TOKYO ELECTRON LIMITED

Inventor： Tomoyuki OBU ,  Masaki KUROKAWA ,  Hiroki IRIUDA

IPC: H01L21/02

CPC classification number: H01L21/022 ,  C23C16/308 ,  C23C16/401 ,  C23C16/45523 ,  C23C16/45557 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02211 ,  H01L21/02271 ,  H01L21/31111

Abstract: A method of forming a laminated film includes forming a silicon oxide film on a plurality of target objects loaded in a reaction chamber, and forming a silicon oxynitride film on the plurality of target objects by supplying a silicon source, an oxidizing agent and a nitride agent to the reaction chamber, wherein forming the silicon oxide film and forming the silicon oxynitride film are repeatedly performed for a predetermined number of times on the plurality of target objects to form a laminated film including the silicon oxynitride film and the silicon oxide film.

Abstract translation: 形成层压膜的方法包括：在装载在反应室中的多个目标物体上形成氧化硅膜，通过供给硅源，氧化剂和氮化物，在多个目标物体上形成氮氧化硅膜 在反应室中，在多个目标物体上重复进行预定次数的形成氧化硅膜并形成氧氮化硅膜，形成包含氮氧化硅膜和氧化硅膜的层叠膜。

公开(公告)号：US20250066916A1

公开(公告)日：2025-02-27

申请号：US18944529

申请日：2024-11-12

Applicant: Tokyo Electron Limited

Inventor： Hiroki IRIUDA ,  Yoichiro CHIBA ,  Atsushi ENDO

IPC: C23C16/455 ,  C23C16/52

Abstract: A processing apparatus includes: a processing container having a substantially cylindrical shape and provided with an exhaust slit on a side wall; and a first pair of gas nozzles extending in a vertical direction along an inside of the side wall of the processing container and disposed symmetrically with respect to a straight line extending from a center of the exhaust slit to a portion of the side wall positioned opposite to the exhaust slit via a center of the processing container; a second pair of gas nozzle disposed symmetrically with respect to the straight line; at least one memory storing executable instructions; and at least one processor configured to execute the executable instructions to: control the first pair of gas nozzles and the second pair of gas nozzles to eject a same processing gas into the processing container.

公开(公告)号：US20220081773A1

公开(公告)日：2022-03-17

申请号：US17472920

申请日：2021-09-13

Applicant: Tokyo Electron Limited

Inventor： Hiroki IRIUDA ,  Kuniyasu SAKASHITA

IPC: C23C16/455 ,  C23C16/52 ,  H01L21/02

Abstract: A processing apparatus includes: a processing container having a substantially cylindrical shape; a gas nozzle extending in a longitudinal direction of the processing container along an inside of a side wall of the processing container; an exhaust body formed on the side wall on an opposite side of the processing container to face the processing gas nozzle; and an adjustment gas nozzle configured to eject a concentration adjustment gas toward a center of the processing container. The adjustment gas nozzle is provided within an angle range in which the exhaust body is formed at a central angle with reference to the center of the processing container in a plan view from the longitudinal direction.

公开(公告)号：US20220081768A1

公开(公告)日：2022-03-17

申请号：US17472945

申请日：2021-09-13

Applicant: Tokyo Electron Limited

Inventor： Hiroki IRIUDA

IPC: C23C16/455 ,  C23C16/458 ,  C23C16/40

Abstract: A processing apparatus includes a processing container that has substantially a cylindrical shape and accommodates a plurality of substrates in multiple tiers at intervals in the longitudinal direction of the processing container; and a gas nozzle that extends in the longitudinal direction of the processing container and has a plurality of gas holes provided at intervals in a longitudinal direction of the gas nozzle to eject a gas into the processing container. The gas holes are arranged every other tier of the plurality of substrates accommodated in multiple tiers, and the gas holes eject the gas toward the side surfaces of the corresponding substrates.

公开(公告)号：US20220081775A1

公开(公告)日：2022-03-17

申请号：US17472959

申请日：2021-09-13

Applicant: Tokyo Electron Limited

Inventor： Hiroki IRIUDA ,  Reita IGARASHI ,  Kuniyasu SAKASHITA

IPC: C23C16/52 ,  C23C16/455 ,  H01L21/02 ,  H01L21/67

Abstract: A gas introduction structure extends in a longitudinal direction of a processing container having a substantially cylindrical shape to supply gas into the processing container. The gas introduction structure includes an introduction section that partitions an introduction chamber, an ejection section that partitions a plurality of ejection chambers each including a plurality of gas holes through which the gas is ejected into the processing container, and a branch section that partitions a branch chamber connected to the introduction chamber. The branch chamber is branched to correspond to the number of ejection chambers in a tournament manner and connected to the ejection chambers.

公开(公告)号：US20200058526A1

公开(公告)日：2020-02-20

申请号：US16661335

申请日：2019-10-23

Applicant: TOKYO ELECTRON LIMITED

Inventor： Hiroki IRIUDA ,  Kohei FUKUSHIMA

IPC: H01L21/67 ,  C23C16/458 ,  H01L21/673 ,  C23C16/455

Abstract: A vertical heat treatment apparatus includes: a substrate holder including a column, substrate holding parts configured to hold the substrates, and gas flow guide parts installed in the column in a corresponding relationship with the substrates; an elevator stand configured to support the substrate holder and to load the substrate holder into the reaction vessel from below the reaction vessel; a rotating mechanism installed in the elevator stand and configured to rotate the substrate holder about a vertical axis; a process gas supply port and an exhaust port respectively formed at a rear side and a front side of a substrate holding region; and a plurality of baffle parts installed independently of the substrate holder so that the baffle parts protrude from the outside toward spaces between the gas flow guide parts adjoining each other and run into the spaces.

公开(公告)号：US20220081771A1

公开(公告)日：2022-03-17

申请号：US17472891

申请日：2021-09-13

Applicant: Tokyo Electron Limited

Inventor： Hiroki IRIUDA ,  Yoichiro CHIBA ,  Atsushi ENDO

IPC: C23C16/455 ,  C23C16/52

Abstract: A processing apparatus includes: a processing container having a substantially cylindrical shape and provided with an exhaust slit on a side wall; and a plurality of gas nozzles extending in a vertical direction along an inside of the side wall of the processing container, disposed symmetrically with respect to a straight line connecting a center of the processing container and a center of the exhaust slit, and each configured to eject a same processing gas into the processing container.

公开(公告)号：US20160240379A1

公开(公告)日：2016-08-18

申请号：US15018949

申请日：2016-02-09

Applicant: TOKYO ELECTRON LIMITED

Inventor： Youichirou CHIBA ,  Hiroki IRIUDA ,  Daisuke SUZUKI

IPC: H01L21/02 ,  C30B1/02 ,  H01L21/67

CPC classification number: C30B1/023 ,  H01L21/2252 ,  H01L21/3247

Abstract: A method of filling a depression of a workpiece is provided. The method includes forming a first thin film made of a semiconductor material substantially not containing an impurity along a wall surface which defines the depression, forming an epitaxial region conforming to crystals of the semiconductor substrate from the semiconductor material of the first thin film moved toward a bottom of the depression by annealing, etching the first thin film remaining on the wall surface, performing gas phase doping upon the epitaxial region, forming a second thin film made of a semiconductor material substantially not containing an impurity along the wall surface, further forming an epitaxial region from the semiconductor material of the second thin film moved toward the bottom of the depression by annealing, and performing gas phase doping upon the second thin film remaining on the wall surface and the epitaxial region.

Abstract translation: 提供了填充工件的凹陷的方法。 该方法包括：形成由沿着限定凹陷的壁表面基本上不含有杂质的半导体材料制成的第一薄膜，从第一薄膜的半导体材料形成符合半导体衬底的晶体的外延区域， 通过退火蚀刻凹陷的底部，蚀刻保留在壁表面上的第一薄膜，对外延区进行气相掺杂，形成由沿着壁表面基本上不含杂质的半导体材料制成的第二薄膜，进一步形成 从第二薄膜的半导体材料的外延区域通过退火向凹陷的底部移动，并且对保留在壁表面和外延区域上的第二薄膜进行气相掺杂。

公开(公告)号：US20140308820A1

公开(公告)日：2014-10-16

申请号：US14315604

申请日：2014-06-26

Applicant: TOKYO ELECTRON LIMITED

Inventor： Atsushi ENDO ,  Masaki KUROKAWA ,  Hiroki IRIUDA

IPC: H01L21/02 ,  H01L23/00

CPC classification number: H01L21/02164 ,  C23C16/345 ,  C23C16/402 ,  H01L21/0217 ,  H01L21/022 ,  H01L21/02271 ,  H01L21/67309 ,  H01L23/562 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method of depositing a silicon oxide film and a silicon nitride film includes depositing the silicon oxide film and the silicon nitride film on a substrate, and a gas for forming the silicon nitride film further includes boron.

Abstract translation: 沉积氧化硅膜和氮化硅膜的方法包括在衬底上沉积氧化硅膜和氮化硅膜，并且用于形成氮化硅膜的气体还包括硼。